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Latest Publications & Patents on Semiconductors

Semiconductors

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This is our latest selection of worldwide publications and patents in english on Semiconductors, between many scientific online journals, classified and focused on semiconductor, diode, MOFSET, PN junction, N-type, P-type, BJT and JFET.

Material-specific lighting requirements and contemporary illumination strategies for galleries

Published on 2026-07-08 by @OXFORD

Abstract: AbstractMuseum lighting simultaneously governs visual presentation and light-induced degradation of artworks. With the widespread adoption of light emitting diode technologies, traditional illuminance- and dose-based standards are increasingly insufficient to address the heterogeneous photochemical responses of different materials. This review synthesizes recent research on material-specific lighting requirements and contemporary illumination strategies for galleries, focusing on spectral power [...]


Our summary: This review addresses material-specific lighting needs and modern strategies for gallery illumination. It highlights the varying sensitivity of artworks to different light wavelengths and the impact on visual presentation and degradation. Optimized lighting approaches can significantly enhance energy efficiency while preserving artwork integrity.

museum lighting, photochemical responses, illumination strategies, energy optimization

Publication

Semiconductor device

Patent published on the 2026-07-02 in WO under Ref WO2026140608 by SONY SEMICONDUCTOR SOLUTIONS CORP [JP] (Sato Shinya [jp])

Abstract: A semiconductor device includes a block, a light-emitting element physically and electrically coupled to the block with a solder layer, and an insulating film disposed between the block and the light-emitting element such that the insulating film is disposed adjacent to the solder layer on a plane substantially defined by the solder layer, wherein the insulating film has a raised step portion.[...]


Our summary: A semiconductor device features a block and a light-emitting element connected via a solder layer. An insulating film is placed between the block and the light-emitting element. This insulating film includes a raised step portion adjacent to the solder layer.

Semiconductor, light-emitting element, insulating film, solder layer

Patent

Semiconductor device including hydrogen sensing structure

Patent published on the 2026-07-02 in US under Ref US20260185959 by SK HYNIX INC [KR] (Ko Dong Jin [kr], Kim Se Hyun [kr], Cha Jun Hwe [kr], Park Gyeong Cheol [kr], Kim Wha Young [kr])

Abstract: A semiconductor device includes an integrated circuit structure disposed over a substrate and a hydrogen sensing structure disposed over the substrate to be laterally spaced apart from the integrated circuit structure. The integrated circuit structure includes an oxide semiconductor layer. The hydrogen sensing structure includes a hydrogen ion sensing layer containing a resistance change material, and a first sensing electrode layer and a second sensing electrode layer disposed at opposite ends [...]


Our summary: The semiconductor device features an integrated circuit structure and a hydrogen sensing structure on a substrate. The hydrogen sensing structure includes a hydrogen ion sensing layer with resistance change material and two sensing electrodes. Both sensing layers are aligned with the oxide semiconductor layer surfaces.

semiconductor device, hydrogen sensing, integrated circuit, oxide semiconductor

Patent

Display panel and electronic device including the same

Patent published on the 2026-07-02 in US under Ref US20260190579 by SAMSUNG DISPLAY CO LTD [KR] (Seo Youngseok [kr], Kim Kyungho [kr], Lee Younjoo [kr])

Abstract: An embodiment of the present disclosure provides a display panel including a plurality of first areas and a second area around each of the plurality of first areas. The display panel includes: a pixel circuit layer including a plurality of pixel circuits and insulating layers and provided in each of the plurality of first areas; a plurality of light-emitting diodes on the pixel circuit layer and electrically connected to each of the plurality of pixel circuits; a connection line provided in the [...]


Our summary: The disclosure describes a display panel with multiple first areas and a second area surrounding them. It features a pixel circuit layer with pixel circuits and insulating layers. Additionally, it includes light-emitting diodes and connection lines that link adjacent pixel circuits.

Display panel, electronic device, pixel circuit, light-emitting diodes

Patent

Processing device, substrate processing device, method for producing semiconductor apparatus, and program

Patent published on the 2026-07-02 in WO under Ref WO2026140125 by KOKUSAI ELECTRIC CORP [JP] (Yamaoka Yuji [jp], Seki Takatoshi [jp])

Abstract: The present invention comprises: a display unit capable of displaying a recipe, in which conditions for processing a substrate is defined for each of a plurality of steps, on an edit screen which includes a setting value display region for displaying, in a table format defined by the axis of the steps and the axis of a plurality of items constituting the conditions, a plurality of setting values set at intersections between the plurality of items and the plurality of steps, and includes a settin[...]


Our summary: The invention features a display unit that shows a recipe for substrate processing with editable setting values. It includes a table format for displaying conditions across multiple steps and items. A control unit manages user instructions to edit and execute these setting values.

semiconductor, substrate processing, display unit, control unit

Patent

Semiconductor device

Patent published on the 2026-07-02 in WO under Ref WO2026140427 by MINEBEA POWER SEMICONDUCTOR DEVICE INC [JP] (Namai Masaki [jp])

Abstract: The present invention reduces recovery loss in an RC-IGBT by suppressing the injection of holes in a diode region in the vicinity of a boundary between an IGBT region and the diode region. The present invention pertains to a semiconductor device 100 comprising an RC-IGBT, wherein: in an IGBT of an IGBT region 21, an emitter electrode 14A and a body layer 2 are ohmic-connected with a contact layer 8 interposed therebetween; a diode region 22 has a low-injection diode region 22B in which an anode [...]


Our summary: The invention reduces recovery loss in an RC-IGBT by suppressing hole injection in the diode region. It includes an IGBT region with ohmic connections and a diode region with both low and high-injection areas. The design separates the low-injection diode region from the IGBT region to enhance performance.

RC-IGBT, semiconductor device, diode region, recovery loss

Patent

Display panel and electronic device including the same

Patent published on the 2026-07-02 in US under Ref US20260190578 by SAMSUNG DISPLAY CO LTD [KR] (Jo Mankyu [kr], Park Jonghwa [kr], Kim Kyungho [kr])

Abstract: [0000] A display panel includes: a base layer including a display area, and a non-display area surrounding around the display area; a first pixel circuit layer in the display area, and including a transistor and insulating layers; a second pixel circuit layer in the display area, and including a transistor and insulating layers; a first light-emitting diode on the first pixel circuit layer, and electrically connected to the transistor of the first pixel circuit layer; a second light-emitting dio[...]


Our summary: The display panel consists of a base layer with a display area and a non-display area. It features two pixel circuit layers, each containing transistors and insulating layers. The design includes light-emitting diodes connected to the transistors and a connection line with improved resistance characteristics.

Display panel, electronic device, pixel circuit, light-emitting diode

Patent

Application and Evaluation of a Bipolar Improvement-Based Metaheuristic Algorithm for Photovoltaic Parameter Estimation

Published on 2026-02-03 by Mashar Cenk Genal @MDPI

Abstract: Photovoltaic (PV) systems play a significant role in renewable energy production. Due to the nonlinear and multi-modal nature of PV models, using accurate model parameters is crucial. In recent years, metaheuristic algorithms have been utilized to estimate these parameter values. While established metaheuristics like Genetic Algorithms (GAs) incorporate mechanisms such as mutation and selection to maintain diversity, they may still encounter challenges related to premature convergence when navig[...]


Our summary: This study evaluates the Bipolar Improved Roosters Algorithm (BIRA) for estimating photovoltaic parameters. BIRA is compared with established algorithms like Genetic Algorithms and Particle Swarm Optimization. Results show BIRA significantly outperforms its competitors in accuracy and reliability for PV parameter estimation.

Metaheuristic Algorithms, Photovoltaic Parameter Estimation, Bipolar Improved Roosters Algorithm, Performance Evaluation

Publication

Topics covered: semiconductors, diode, MOFSET, PN junction, N-type, P-type, BJT, JFET, Schottky junction, ALD growth, lithium-ion batteries, high-mobility p-type semiconductors, Josephson diode, molybdenum disulfide, nanomaterials, electrochemical properties, hydrothermal method, photodetection, ISO 9001, IEC 60747, IEEE 8023, IEC 61215, and ISO 14001..

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(if date is unknown or not relevant, e.g. "fluid mechanics", a rounded estimation of its notable emergence is provided)

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