Product Design, Manufacturing & Innovation Resources

최신 논문 – 반도체 관련 특허

반도체

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> 무료 간행물 검색 도구 < 저자, 주제, 키워드, 날짜 또는 저널별로 검색.

> 무료 특허 검색 도구 < 유럽 ​​특허청의 영문 특허를 참조하십시오.

본 자료는 반도체, 다이오드, MOFSET, PN 접합, N형, P형, BJT 및 JFET에 초점을 맞춰 분류하고 집중적으로 정리한 전 세계 영문 반도체 관련 논문 및 특허 목록입니다. 다양한 온라인 과학 저널에 게재된 자료들을 포함하고 있습니다.

Display device

Patent published on the 2026-05-28 in US under Ref US20260150475 by AUO CORP [TW] (Chen Lung-jing [tw], Huang Tzu-chin [tw], Liu Chan-jui [tw])

Abstract: A display device includes a light emitting substrate and a counter substrate opposite to the light emitting substrate. The light emitting substrate includes a first substrate, a reflective pattern layer, light emitting diodes and scattering elements. The reflective pattern layer is on the first substrate and has openings. The light emitting diodes are in the openings. The scattering elements are filled in the openings, and cover the light emitting diodes. The counter substrate includes a second [...]


Our summary: A display device consists of a light emitting substrate and a counter substrate. The light emitting substrate contains a reflective pattern layer with openings for light emitting diodes. The counter substrate features filter units, a planarization layer, and lenses corresponding to the light emitting diodes.

display device, light emitting diodes, reflective pattern layer, counter substrate

Patent

Enhanced cooling of a high-power radio frequency flip-chip die using a thermal-spreading interposer

Patent published on the 2026-05-28 in US under Ref US20260150679 by QORVO US INC [US] (Hasnine Md [us], Carpenter Charles Edward [us])

Abstract: Aspects of the disclosure provide a semiconductor package and a method of producing the same. The disclosed semiconductor package includes a substrate; an interposer attached to the substrate, the interposer comprising one or more through vias across the interposer; a flip-chip (FC) die attached to the interposer via a plurality of copper posts; and a silicon carbide (SiC) heat spreader disposed on atop the FC die via a layer of sinter material. In various embodiments, a wireless device may incl[...]


Our summary: The content describes a semiconductor package featuring an interposer with through vias and a flip-chip die. It highlights the use of a silicon carbide heat spreader for enhanced cooling. Additionally, it mentions potential applications in wireless devices.

thermal management, semiconductor package, flip-chip die, heat spreader

Patent

Production method and optoelectronic semiconductor device

Patent published on the 2026-05-28 in WO under Ref WO2026107711 by OSRAM OPTO SEMICONDUCTORS CHINA CO LTD [CN] (Wang-york Yue [cn], Lu Wanchun [cn])

Abstract: In one embodiment, the production method is for manufacturing optoelectronic semiconductor devices and comprises: A) providing a lead frame sheet having lead frame units with a top side and a bottom side, the lead frame units each comprises a first lead frame part provided with a solder control structure at the bottom side and a second lead frame part, B) molding a molding body for housing bodies of the optoelectronic semiconductor devices onto the lead frame sheet wherein the bottom side and th[...]


Our summary: The production method involves providing a lead frame sheet with solder control structures. It includes molding a body for housing the optoelectronic devices while keeping certain areas free. Finally, a metallic coating is applied, and the components are singulated into individual devices.

optoelectronic, semiconductor, lead frame, manufacturing

Patent

Sidewall spacer trimming

Patent published on the 2026-05-28 in US under Ref US20260150363 by TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD [TW] (Hsu Shao-hua [tw], Hu Yuan-cheng [tw], Lin Chia-i [tw], Chien Kai-min [tw], Peng Yu-jiun [tw])

Abstract: Provided are semiconductor structures and methods for fabricating semiconductor structures. A method includes forming a stack of semiconductor nanosheets over a substrate; forming a sacrificial gate structure over the stack of semiconductor nanosheets; forming a liner adjacent to the sacrificial gate structure; forming a dielectric layer adjacent to the liner; removing the sacrificial gate structure to form a gate cavity; performing an oxidation process to oxidize a portion of the liner adjacent[...]


Our summary: The method involves fabricating semiconductor structures using nanosheets and a sacrificial gate. It includes forming a dielectric layer and a liner adjacent to the gate. An oxidation process is performed to oxidize part of the liner before its removal.

semiconductor, nanosheets, gate structure, oxidation

Patent

Display panel and electronic device including the same

Patent published on the 2026-05-28 in US under Ref US20260148681 by SAMSUNG DISPLAY CO LTD [KR] (Kim Minsoo [kr], Choi Jonghyun [kr])

Abstract: [0000] A display panel includes: a substrate comprising a component area, a main display area at least partially surrounding the component area, and a non-display area at least partially surrounding the main display area; main pixels in the main display area, comprising main light-emitting diodes, and configured to perform active matrix driving; auxiliary pixels in the component area, comprising auxiliary light-emitting diodes, and configured to perform passive matrix driving; and a driver in th[...]


Our summary: The display panel features a substrate with a component area, a main display area, and a non-display area. It includes main pixels with active matrix driving and auxiliary pixels with passive matrix driving. The driver in the non-display area connects the auxiliary light-emitting diodes directly.

display panel, electronic device, light-emitting diodes, active matrix driving

Patent

Semiconductor device

Patent published on the 2026-05-28 in US under Ref US20260149358 by FUJI ELECTRIC CO LTD [JP] (Miyazawa Shigemi [jp])

Abstract: [0000] A semiconductor device, including: a switching circuit which includes a lower arm switching element, the switching circuit being connected to a load, and being configured to operate the load based on switching drive of the lower arm switching element; and a lower arm control circuit, which includes: a first circuit that uses a ground potential as a reference potential thereof, receives a lower arm drive signal, generates a first drive signal from the received lower arm drive signal, and o[...]


Our summary: The document describes a semiconductor device with a switching circuit and a lower arm control circuit. The lower arm control circuit generates drive signals using different reference potentials. It operates the load based on the switching drive of the lower arm switching element.

Semiconductor, switching circuit, control circuit, drive signal

Patent

Intrinsic radial superconducting diode effect

Published on 2026-03-12 by Chuan-Shuai Huang, Weinan Lin and Xiancong Lu @IOP SCIENCE

Abstract: Using Ginzburg–Landau theory, we investigate the angular dependence of the intrinsic superconducting diode effect (SDE) in systems with mixed conventional Rashba and radial Rashba (RR) spin–orbit couplings (SOC), characterized by the so-called Rashba angle . Our results show that the admixture of the tangential and radial spin-textures introduces a pronounced phase shift in the dependence of diode efficiency η on magnetic field angle —a hallmark of the radial SDE arising from RR SOC. Impo[...]


Our summary: This study investigates the intrinsic superconducting diode effect using Ginzburg–Landau theory. It reveals a pronounced phase shift in diode efficiency due to mixed Rashba spin-orbit couplings. Higher-order magnetic field corrections show a distinct non-sinusoidal angular dependence, indicating the potential for optimizing diode devices.

superconducting diode, spin-orbit coupling, Ginzburg–Landau theory, angular dependence

Publication

Application and Evaluation of a Bipolar Improvement-Based Metaheuristic Algorithm for Photovoltaic Parameter Estimation

Published on 2026-02-03 by Mashar Cenk Genal @MDPI

Abstract: Photovoltaic (PV) systems play a significant role in renewable energy production. Due to the nonlinear and multi-modal nature of PV models, using accurate model parameters is crucial. In recent years, metaheuristic algorithms have been utilized to estimate these parameter values. While established metaheuristics like Genetic Algorithms (GAs) incorporate mechanisms such as mutation and selection to maintain diversity, they may still encounter challenges related to premature convergence when navig[...]


Our summary: This study evaluates the Bipolar Improved Roosters Algorithm (BIRA) for estimating photovoltaic parameters. BIRA is compared with established algorithms like Genetic Algorithms and Particle Swarm Optimization. Results show BIRA significantly outperforms its competitors in accuracy and reliability for PV parameter estimation.

Metaheuristic Algorithms, Photovoltaic Parameter Estimation, Bipolar Improved Roosters Algorithm, Performance Evaluation

Publication

다룬 주제: 반도체, 다이오드, MOFSET, PN 접합, N형, P형, BJT, JFET, 쇼트키 접합, ALD 성장, 리튬 이온 배터리, 고이동도 p형 반도체, 조셉슨 다이오드, 이황화몰리브덴, 나노소재, 전기화학적 특성, 수열합성법, 광검출, ISO 9001, IEC 60747, IEEE 8023, IEC 61215 및 ISO 14001.

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