Product Design, Manufacturing & Innovation Resources

최신 논문 – 반도체 관련 특허

반도체

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본 자료는 반도체, 다이오드, MOFSET, PN 접합, N형, P형, BJT 및 JFET에 초점을 맞춰 분류하고 집중적으로 정리한 전 세계 영문 반도체 관련 논문 및 특허 목록입니다. 다양한 온라인 과학 저널에 게재된 자료들을 포함하고 있습니다.

Distributed feedback laser and method of manufacture thereof

Patent published on the 2026-06-11 in WO under Ref WO2026119458 by INDIE TECH SWITZERLAND AG [CH] (Rossetti Marco [ch], Malinverni Marco [ch], DÜlk Marcus [ch], Castiglia Antonino [ch])

Abstract: A distributed feedback laser is fabricated from a semiconductor heterostructure. A lower cladding and waveguiding structure is formed by depositing alternating first and second layers (12, 14) comprising first and second materials of different compositions and Al x1 ln y1 Ga 1-x1-y1 N and Al x2 ln y2 Ga 1-x2-y2 N, with x1, y1 > 0 and x2 + y2 < 1, the compositions being selected such that the refractive index of the first material is lower than that of the second material. At least one of the fir[...]


Our summary: A distributed feedback laser is created using a semiconductor heterostructure with alternating layers of different materials. The process includes etching to form a corrugated surface and overgrowing a planarizing layer. An in-plane Bragg grating is established to induce distributed feedback, followed by the deposition of active and upper cladding layers.

distributed feedback laser, semiconductor heterostructure, Bragg grating, waveguiding layers

Patent

Power conversion device

Patent published on the 2026-06-11 in WO under Ref WO2026121774 by LG INNOTEK CO LTD [KR] (Kim Soo Hong [kr], Jung Kwang Soon [kr], Cho Byung Geuk [kr])

Abstract: A power conversion device according to an embodiment of the present invention comprises: an input unit for receiving input power; a power conversion unit for converting the input power; an output unit for outputting power to a battery; a diode connected between the power conversion unit and the output unit; and a control unit that uses the voltages of the front and rear ends of the diode to control an output current output to the output unit.[...]


Our summary: The power conversion device includes an input unit for receiving input power, a power conversion unit for converting that power, and an output unit for delivering power to a battery. A diode is connected between the power conversion unit and the output unit. The control unit regulates the output current based on the voltages across the diode.

Power conversion, input unit, output unit, control unit

Patent

Film-shaped adhesive for semiconductor, and semiconductor device and manufacturing method therefor

Patent published on the 2026-06-11 in WO under Ref WO2026121280 by RESONAC CORP [JP] (Ohata Masaki [jp], Sato Makoto [jp], Suda Yuto [jp])

Abstract: Disclosed is a film-shaped adhesive for semiconductors, which contains a thermosetting resin, a curing agent, a thermoplastic resin, and an alumina filler surface-treated with a silane coupling agent. The content of the alumina filler surface-treated with the silane coupling agent is 50 mass% or more based on the total mass of the film-shaped adhesive for semiconductors.[...]


Our summary: The document describes a film-shaped adhesive specifically designed for semiconductors. It includes a thermosetting resin, a curing agent, and a thermoplastic resin. The adhesive contains at least 50 mass% of alumina filler treated with a silane coupling agent.

adhesive, semiconductor, thermosetting resin, alumina filler

Patent

Method and station for cleaning a carrier pod for the atmospheric transport and storage of semiconductor substrates

Patent published on the 2026-06-11 in WO under Ref WO2026119468 by PFEIFFER VACUUM [FR] (Bounouar Julien [fr], Bellet Bertrand [fr], Bachellier Nicolas [fr])

Abstract: The invention relates to a cleaning method for a carrier pod for the atmospheric transport and storage of semiconductor substrates, comprising the following sequence of steps: - a first step of wetting during which the inner walls of a box of the carrier pod are wetted by a predetermined quantity of liquid water less than 200 ml/m2 (0.0002m3/m2), for example less than 100 ml/m2 (0.0001m3/m2), - a successive second step of dewetting by spraying of a pressurized gas jet, during which an articulate[...]


Our summary: The invention describes a cleaning method for a carrier pod used in semiconductor substrate transport and storage. It involves a wetting step with a limited amount of liquid water followed by a dewetting step using a pressurized gas jet. An articulated arm moves the gas spraying device to effectively remove the liquid from the inner walls of the pod.

cleaning method, carrier pod, semiconductor substrates, pressurized gas

Patent

Compound for organic optoelectronic diodes, composition for organic optoelectronic diodes, organic optoelectronic diode, and display device

Patent published on the 2026-06-11 in WO under Ref WO2026121869 by SAMSUNG SDI CO LTD [KR] (Kim Wook [kr], Ko Jonghoon [kr], Kim Jonghoon [kr], Im Suheon [kr], Huh Dalho [kr], Lee Seungjae [kr], Kim Mingi [kr], Kim Hyung Sun [kr], Lee Hanill [kr], Yoon Jiah [kr], Lee Mijin [kr], Gwak Seonyeong [kr], Park Minji [kr])

Abstract: The present invention relates to: a compound for organic optoelectronic diodes, represented by chemical formula 1; and a composition for organic optoelectronic diodes, an organic optoelectronic diode, and a display device, comprising the compound. The details of chemical formula 1 is as defined in the specification.[...]


Our summary: The invention presents a compound for organic optoelectronic diodes. It includes a specific composition and an organic optoelectronic diode. Additionally, it encompasses a display device utilizing the compound.

organic optoelectronic diodes, compound, composition, display device

Patent

Nitride semiconductor device

Patent published on the 2026-06-11 in US under Ref US20260164696 by PANASONIC HOLDINGS CORP [JP] (Okita Hideyuki [jp], Matsunaga Keiichi [jp], Masunaga Daisuke [jp], Shibata Daisuke [jp], Hikita Masahiro [jp])

Abstract: [0000] A nitride semiconductor device includes a first nitride semiconductor layer with an n-type conductivity, a second nitride semiconductor layer with a p-type conductivity, a source electrode in direct contact with the second nitride semiconductor layer and a mesa structure with two or more steps disposed in a termination region between an active region of the nitride semiconductor device and an inactive region surrounding the active region. The mesa structure includes a mesa at a first step[...]


Our summary: A nitride semiconductor device features an n-type first layer and a p-type second layer. It includes a source electrode in contact with the second layer and a multi-step mesa structure in the termination region. The mesa structure has specific depth requirements relative to the second layer s thickness.

nitride semiconductor, mesa structure, n-type conductivity, p-type conductivity

Patent

Intrinsic radial superconducting diode effect

Published on 2026-03-12 by Chuan-Shuai Huang, Weinan Lin and Xiancong Lu @IOP SCIENCE

Abstract: Using Ginzburg–Landau theory, we investigate the angular dependence of the intrinsic superconducting diode effect (SDE) in systems with mixed conventional Rashba and radial Rashba (RR) spin–orbit couplings (SOC), characterized by the so-called Rashba angle . Our results show that the admixture of the tangential and radial spin-textures introduces a pronounced phase shift in the dependence of diode efficiency η on magnetic field angle —a hallmark of the radial SDE arising from RR SOC. Impo[...]


Our summary: This study investigates the intrinsic superconducting diode effect using Ginzburg–Landau theory. It reveals a pronounced phase shift in diode efficiency due to mixed Rashba spin-orbit couplings. Higher-order magnetic field corrections show a distinct non-sinusoidal angular dependence, indicating the potential for optimizing diode devices.

superconducting diode, spin-orbit coupling, Ginzburg–Landau theory, angular dependence

Publication

Application and Evaluation of a Bipolar Improvement-Based Metaheuristic Algorithm for Photovoltaic Parameter Estimation

Published on 2026-02-03 by Mashar Cenk Genal @MDPI

Abstract: Photovoltaic (PV) systems play a significant role in renewable energy production. Due to the nonlinear and multi-modal nature of PV models, using accurate model parameters is crucial. In recent years, metaheuristic algorithms have been utilized to estimate these parameter values. While established metaheuristics like Genetic Algorithms (GAs) incorporate mechanisms such as mutation and selection to maintain diversity, they may still encounter challenges related to premature convergence when navig[...]


Our summary: This study evaluates the Bipolar Improved Roosters Algorithm (BIRA) for estimating photovoltaic parameters. BIRA is compared with established algorithms like Genetic Algorithms and Particle Swarm Optimization. Results show BIRA significantly outperforms its competitors in accuracy and reliability for PV parameter estimation.

Metaheuristic Algorithms, Photovoltaic Parameter Estimation, Bipolar Improved Roosters Algorithm, Performance Evaluation

Publication

다룬 주제: 반도체, 다이오드, MOFSET, PN 접합, N형, P형, BJT, JFET, 쇼트키 접합, ALD 성장, 리튬 이온 배터리, 고이동도 p형 반도체, 조셉슨 다이오드, 이황화몰리브덴, 나노소재, 전기화학적 특성, 수열합성법, 광검출, ISO 9001, IEC 60747, IEEE 8023, IEC 61215 및 ISO 14001.

역사적 맥락

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(날짜를 알 수 없거나 관련이 없는 경우, 예를 들어 "유체역학"의 경우, 주목할 만한 등장 시기를 대략적으로 추정하여 제공합니다.)

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