Product Design, Manufacturing & Innovation Resources

أحدث المنشورات وبراءات الاختراع في مجال أشباه الموصلات

أشباه الموصلات

نصيحة: بالإضافة إلى التحديد أدناه، يمكنك البحث في قاعدتي بياناتنا بالكامل وتصفيتها:

> أداة البحث عن المنشورات المجانية < حسب المؤلف، أو الموضوع، أو الكلمات المفتاحية، أو التاريخ، أو المجلة.

> أداة البحث عن براءات الاختراع المجانية < للحصول على براءات اختراع باللغة الإنجليزية من مكتب براءات الاختراع الأوروبي.

هذه هي أحدث مجموعة مختارة من المنشورات وبراءات الاختراع العالمية باللغة الإنجليزية عن أشباه الموصلات، بين العديد من المجلات العلمية على الإنترنت، مصنفة ومركزة على أشباه الموصلات، الصمام الثنائي، MOFSET، تقاطع PN، N-type، P-type، BJT وJFET.

Photodetection element, and method for producing photodetection element

Patent published on the 2026-05-21 in WO under Ref WO2026105461 by HAMAMATSU PHOTONICS KK [JP] (Kuwahara Yosuke [jp], Nakano Mitsuyoshi [jp])

Abstract: A photodetection element comprises a substrate, an insulating layer, and a semiconductor layer having a first main surface (4a) and a second main surface (4b). The semiconductor layer has: a first semiconductor region; a second semiconductor region that surrounds the first semiconductor region; a third semiconductor region that is positioned closer to the second main surface (4b), as compared with the first semiconductor region and the second semiconductor region, and that overlaps the first sem[...]


Our summary: The photodetection element consists of a substrate, an insulating layer, and a semiconductor layer with multiple regions. It features a hole extending to the third semiconductor region, which has a specific truncated pyramid shape. The fourth semiconductor region connects the second and third semiconductor regions along the hole s lateral surface.

Photodetection, Semiconductor Layer, Insulating Layer, Substrate

Patent

Semiconductor device, light-emitting substrate and manufacturing method therefor

Patent published on the 2026-05-21 in WO under Ref WO2026103538 by BOE TECHNOLOGY GROUP CO LTD [CN] (Lu Meirong [cn], Guo Kai [cn], Liu Weixing [cn], Peng Jintao [cn], Zhang Chunfang [cn], Teng Wanpeng [cn], Xu Zhiqiang [cn], Wang Huanhuan [cn], Yan Yuwei [cn])

Abstract: A semiconductor device, a light-emitting substrate and a manufacturing method therefor. The semiconductor device comprises a substrate, a first electrode assembly and a second electrode assembly, and a light-emitting structure layer, wherein the first electrode assembly or the second electrode assembly is provided on the substrate, the first electrode assembly and the second electrode assembly are stacked in the direction perpendicular to the substrate, and the first electrode assembly and/or th[...]


Our summary: The semiconductor device features a substrate with stacked first and second electrode assemblies. A light-emitting structure layer is positioned between these electrode assemblies. The first electrode contacts the light-emitting structure, while the second electrode is insulated and extends around its periphery.

semiconductor device, light-emitting substrate, electrode assembly, manufacturing method

Patent

Semiconductor processing sheet

Patent published on the 2026-05-21 in WO under Ref WO2026105568 by NITTO DENKO CORP [JP] (Hojo Yuta [jp], Shishido Yuichiro [jp], Hatakeyama Yoshiharu [jp], Miki Keita [jp])

Abstract: Provided is a semiconductor processing sheet comprising: a protective layer that contains a hydrophilic polymer and is bonded to a surface to be protected of an adherend; a base material layer that is arranged to face one surface of the protective layer; and an adhesive layer that is disposed between the base material layer and the protective layer and has an adhesive force that decreases as a result of being irradiated with active energy rays. When the adhesive layer and the protective layer ar[...]


Our summary: The semiconductor processing sheet includes a protective layer with a hydrophilic polymer bonded to a surface. It features a base material layer facing the protective layer and an adhesive layer with decreasing adhesive force upon irradiation. The adhesive layer has a Tanδ of 0.35 or less at 85°C, while the protective layer has a storage elastic modulus of 150,000 Pa or less at the same temperature.

semiconductor processing, hydrophilic polymer, adhesive layer, dynamic viscoelasticity

Patent

Accurate gas leak detection using tuneable diode lidar systems

Patent published on the 2026-05-21 in US under Ref US20260140258 by QLM TECH LTD [GB] (Ai Xiao [gb], Titchener James Graham [gb], Reed Murray Keith [gb])

Abstract: When using spectroscopic diode lidar to detect a gas of interest such as methane (CH4), detecting high concentration pathlength (CPL) values of the gas of interest may not actually indicate a plume or leak. In areas such as a refinery, where ambient gas levels may be routinely high, absorption from ambient gas measured over a long pathlength may produce the same CPL value as a much closer gas leak, leading to a false positive. By collecting and using lidar distance information in tandem with the[...]


Our summary: Tuneable diode lidar systems enhance gas leak detection accuracy. High concentration pathlength values can mislead detection in high ambient gas environments. Integrating lidar distance data with CPL values improves reliability and alarm triggering for gas leaks.

lidar, gas detection, methane, spectroscopic measurements

Patent

Semiconductor device with degradation detection capability

Patent published on the 2026-05-21 in US under Ref US20260144014 by INFINEON TECHNOLOGIES AG [DE] (Boianceanu Cristian Mihai [ro])

Abstract: [0000] A semiconductor device with a power transistor is described herein. The power transistor is composed of a plurality of transistor cells arranged in a cell array, wherein the plurality of transistor cells comprise first transistor cells arranged in a first part of the cell array and second transistor cells arranged in a second part of the cell array. The semiconductor device further includes a metallization layer that forms the source electrode of the power transistor, first bond wires wit[...]


Our summary: A semiconductor device features a power transistor with multiple transistor cells organized in a cell array. The device includes a metallization layer for the source electrode and bond wires connected to different parts of the array. The bond wires differ in volume, with the second bond wires being larger than the first.

Semiconductor, Power Transistor, Degradation Detection, Cell Array

Patent

Semiconductor packages having interposers

Patent published on the 2026-05-21 in US under Ref US20260144120 by SAMSUNG ELECTRONICS CO LTD [KR] (Song Hyunjung [kr])

Abstract: [0000] A semiconductor package may include an interposer having a plurality of first interposer pads; a plurality of first conductive bumps respectively on the first interposer pads; a molding layer on the interposer to surround the plurality of first conductive bumps and to expose upper surfaces of the plurality of first conductive bumps; a semiconductor chip having a plurality of chip pads, the semiconductor chip on the molding layer such that the plurality of chip pads of the semiconductor ch[...]


Our summary: A semiconductor package includes an interposer with conductive bumps and a molding layer. The semiconductor chip is placed on the molding layer, aligning its pads with the interposer. Conductive bumps connect the chip pads to the interposer pads for electrical interconnection.

Interposer, Semiconductor package, Conductive bumps, Molding layer

Patent

Intrinsic radial superconducting diode effect

Published on 2026-03-12 by Chuan-Shuai Huang, Weinan Lin and Xiancong Lu @IOP SCIENCE

Abstract: Using Ginzburg–Landau theory, we investigate the angular dependence of the intrinsic superconducting diode effect (SDE) in systems with mixed conventional Rashba and radial Rashba (RR) spin–orbit couplings (SOC), characterized by the so-called Rashba angle . Our results show that the admixture of the tangential and radial spin-textures introduces a pronounced phase shift in the dependence of diode efficiency η on magnetic field angle —a hallmark of the radial SDE arising from RR SOC. Impo[...]


Our summary: This study investigates the intrinsic superconducting diode effect using Ginzburg–Landau theory. It reveals a pronounced phase shift in diode efficiency due to mixed Rashba spin-orbit couplings. Higher-order magnetic field corrections show a distinct non-sinusoidal angular dependence, indicating the potential for optimizing diode devices.

superconducting diode, spin-orbit coupling, Ginzburg–Landau theory, angular dependence

Publication

Application and Evaluation of a Bipolar Improvement-Based Metaheuristic Algorithm for Photovoltaic Parameter Estimation

Published on 2026-02-03 by Mashar Cenk Genal @MDPI

Abstract: Photovoltaic (PV) systems play a significant role in renewable energy production. Due to the nonlinear and multi-modal nature of PV models, using accurate model parameters is crucial. In recent years, metaheuristic algorithms have been utilized to estimate these parameter values. While established metaheuristics like Genetic Algorithms (GAs) incorporate mechanisms such as mutation and selection to maintain diversity, they may still encounter challenges related to premature convergence when navig[...]


Our summary: This study evaluates the Bipolar Improved Roosters Algorithm (BIRA) for estimating photovoltaic parameters. BIRA is compared with established algorithms like Genetic Algorithms and Particle Swarm Optimization. Results show BIRA significantly outperforms its competitors in accuracy and reliability for PV parameter estimation.

Metaheuristic Algorithms, Photovoltaic Parameter Estimation, Bipolar Improved Roosters Algorithm, Performance Evaluation

Publication

المواضيع المغطاة: أشباه الموصلات، الصمام الثنائي، الصمام الثنائي (ديود)، الصمام الثنائي (MOFSET)، وصلة PN، الوصلة P، النوع N، النوع P، BJT، JFET، وصلة شوتكي، نمو ALD، بطاريات الليثيوم أيون، أشباه الموصلات عالية الحركة من النوع p، الصمام الثنائي جوزيفسون، ثاني كبريتيد الموليبدينوم، المواد النانوية، الخواص الكهروكيميائية، الطريقة الحرارية المائية، الكشف الضوئي، ISO 9001، IEC 60747، IEEE 8023، IEC 61215، وISO 14001.

السياق التاريخي

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