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Ultime pubblicazioni – Brevetti su emettitore passivato e cella posteriore (PERC)

Emettitore e cella posteriore passivati

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Perc technology
Perc technology enhances solar cell efficiency through dielectric passivation and optimized rear surface design.

La tecnologia PERC (Passivated Emitter and Rear Cell) estende le celle solari convenzionali in alluminio con campo posteriore superficiale introducendo uno strato di passivazione dielettrica, tipicamente Al2O3 ricoperto da SiNx, sulla superficie posteriore del silicio, sopprimendo la ricombinazione e migliorando la riflettanza posteriore interna. I miglioramenti prestazionali derivano dalla riduzione della velocità di ricombinazione superficiale, dal miglioramento della durata dei portatori minoritari e dall'ottimizzazione dei contatti posteriori locali aperti tramite ablazione laser.

L'integrazione dei processi riguarda l'uniformità della deposizione PECVD o ALD, la metallizzazione serigrafica, i profili di cottura e le dinamiche di passivazione dell'idrogeno. La degradazione indotta dalla luce dovuta a difetti boro-ossigeno e la sua mitigazione tramite ricottura di rigenerazione rimangono un tema di ricerca attivo.

Questa pagina raccoglie le più recenti pubblicazioni sottoposte a revisione paritaria e i brevetti concessi che spaziano dalla fisica delle celle PERC ai processi di fabbricazione, dalle varianti bifacciali all'integrazione a livello di modulo:

Questa è la nostra ultima selezione di pubblicazioni e brevetti mondiali in inglese su Passivated Emitter and Rear Cell (PERC), tra numerose riviste scientifiche online, classificate e focalizzate su Passivazione della superficie posteriore, Passivazione dell'ossido di alluminio, Passivazione del nitruro di silicio, Contatto posteriore locale, Apertura del contatto laser, Strato di passivazione dielettrica, Velocità di ricombinazione superficiale, Durata di vita dei portatori minoritari, Riflettanza posteriore, Efficienza quantica interna, PERC bifacciale, PERC+, Emettitore posteriore, Campo della superficie anteriore, Emettitore selettivo, Passivazione dell'idrogeno, Processo di cottura, Deposizione di Al2O3, Deposizione PECVD, Deposizione ALD, Ablazione laser posteriore, Resistenza di contatto, Ottimizzazione del fattore di riempimento, Degradazione indotta dalla luce, Difetto boro-ossigeno, Ricottura di rigenerazione, Processo di gettering, Passivazione del difetto di massa, Miglioramento della tensione a circuito aperto, Metallizzazione serigrafata e Passivated Emitter and Rear Cell.

Rechargeable battery and battery pack including the same

Patent published on the 2026-10-07 in EP under Ref EP4819300 by SAMSUNG SDI CO LTD [KR] (Seong Yeon Kyeong [kr], Kim Hyun [kr])

Abstract: A battery and a battery pack including the same are disclosed. A battery of a battery pack having a cooling member includes an electrode assembly and a case in which the electrode assembly is accommodated, and a thermal contact resistance between the case and the electrode assembly in a first portion of the battery adjacent to the cooling member is greater than a thermal contact resistance between the case and the electrode assembly in a second portion of the battery that is farther from the coo[...]


Our summary: The content describes a rechargeable battery and battery pack with a cooling member. It highlights the thermal contact resistance differences between two portions of the battery. The design aims to improve thermal management in the battery system.

Rechargeable battery, battery pack, cooling member, thermal contact resistance

Patent

Ultrahigh bandgap algan channel hemts with low contact resistance

Patent published on the 2026-10-01 in US under Ref US20260303761 by WISCONSIN ALUMNI RES FOUND [US] (Pasayat Shubhra S [us], Mukhopadhyay Swarnav [us], Gupta Chirag [us], Gohel Khush [us])

Abstract: Aluminum gallium nitride (AlGaN) channel high electron mobility transistors (HEMTs), methods of operating the AlGaN HEMTs, and methods of making the AlGaN HEMTs are provided. The AlGaN HEMTs include source and drain contacts on a highly n-type doped, reverse graded AlGaN contact layer. At least a portion of the HEMT heterostructure is partially or fully strained relaxed to provide low contact resistance at the interface between the contact layer and the source and/or drain contact.[...]


Our summary: The content discusses ultrahigh bandgap AlGaN channel HEMTs with low contact resistance. It details methods for operating and fabricating these transistors. The HEMTs feature a reverse graded AlGaN contact layer with n-type doping and a strained relaxed heterostructure.

AlGaN, HEMTs, contact resistance, heterostructure

Patent

Tungsten-modified nickel-alumina composite catalyst prepared through one-pot firing process

Patent published on the 2026-10-01 in WO under Ref WO2026205711 by UNIV ULSAN FOUND IND COOP [KR] (Shin Eun Woo [kr], Jamsaz Azam [kr])

Abstract: The present invention relates to a catalyst manufacturing method in which a tungsten-modified nickel-alumina composite catalyst prepared through a one-pot firing process is charged into a reactor and subjected to an in-situ reduction treatment. According to the present invention, the addition of tungsten suppresses coke formation, and thus catalytic activity is excellent and persists without degrading even after a long reaction time.[...]


Our summary: The invention describes a method for manufacturing a tungsten-modified nickel-alumina composite catalyst using a one-pot firing process. This catalyst undergoes in-situ reduction treatment in a reactor. The addition of tungsten enhances catalytic activity and prevents coke formation, ensuring durability over extended reaction times.

Tungsten, nickel-alumina, composite catalyst, one-pot firing

Patent

Display device

Patent published on the 2026-09-24 in US under Ref US20260293397 by LG DISPLAY CO LTD [KR] (Na Hyunseok [kr], Kim Woosung [kr], Cho Seongsoo [kr], Shin Sanghak [kr])

Abstract: A display device includes a substrate having transistors and lower connection electrodes, insulating and protective layers disposed on the substrate, and an element disposed above an adhesive layer. An upper connection electrode has a concave end portion that laterally contacts side surfaces of an element contact electrode while also electrically connecting to a lower connection electrode through the adhesive layer. A further upper electrode connects another element contact electrode to an upper[...]


Our summary: A display device consists of a substrate with transistors and connection electrodes. It features a structure that maintains electrical coupling despite alignment variations. This design enhances contact area, reduces resistance, and simplifies assembly while lowering power consumption.

display device, transistors, electrical stability, power consumption

Patent

Ultrathin aluminum-rich capping layers for improving internal quantum efficiency in ultraviolet leds

Patent published on the 2026-09-03 in WO under Ref WO2026183559 by THE REGENTS OF THE UNIV OF CALIFORIA [US] (Wang Michael [us], Gong Wenting [us], Nakamura Shuji [us], Speck James S [us])

Abstract: With the use of ultrathin aluminum-rich capping layers, the efficiency of ultraviolet (UV) or far-UV light-emitting diodes (LEDs), laser diode (LDs), or other light-emitting devices is improved through the reduction of carrier loss due to electron overshoot and improved radiative efficiency through improved quantum confinement.[...]


Our summary: Ultrathin aluminum-rich capping layers enhance the internal quantum efficiency of ultraviolet LEDs. They reduce carrier loss caused by electron overshoot. Improved quantum confinement leads to better radiative efficiency in light-emitting devices.

Ultrathin layers, aluminum-rich, quantum efficiency, ultraviolet LEDs

Patent

Method for manufacturing electronic device board connector

Patent published on the 2026-08-13 in WO under Ref WO2026168639 by GTG SOLUTION CO LTD [KR] (Lim Jong-gae [kr])

Abstract: The present invention relates to a method for manufacturing an electronic device board connector. The objective of the present invention is to quickly and accurately manufacture a board connector, which has a connection pin, a spring part and a solder terminal integrally formed to have a constant contact resistance while not causing a connection resistance and not being affected by usage time. The present invention relates to the method for manufacturing an electronic device board connector, com[...]


Our summary: The invention describes a method for manufacturing an electronic device board connector. It includes a spring bending process, a connection pin compression binding process, and a spring-part matching and bending process. The goal is to create a connector with low contact resistance and high durability.

connector manufacturing, electronic device, spring bending process, connection pin

Patent

Material-specific lighting requirements and contemporary illumination strategies for galleries

Published on 2026-07-08 by @OXFORD

Abstract: AbstractMuseum lighting simultaneously governs visual presentation and light-induced degradation of artworks. With the widespread adoption of light emitting diode technologies, traditional illuminance- and dose-based standards are increasingly insufficient to address the heterogeneous photochemical responses of different materials. This review synthesizes recent research on material-specific lighting requirements and contemporary illumination strategies for galleries, focusing on spectral power [...]


Our summary: This review addresses material-specific lighting needs and modern strategies for gallery illumination. It highlights the varying sensitivity of artworks to different light wavelengths and the impact on visual presentation and degradation. Optimized lighting approaches can significantly enhance energy efficiency while preserving artwork integrity.

museum lighting, photochemical responses, illumination strategies, energy optimization

Publication

External control of photocleavage reactivity in polymer networks to reconcile photodegradability and photostability

Published on 2026-04-13 by Hiroshi Masai @NATURE

Abstract: Polymer Journal, Published online: 13 April 2026; doi:10.1038/s41428-026-01165-6This review summarizes our recent strategies for controlling the photostability and photoreactivity of polymer materials. Beyond conventional photoreactive polymers, we have developed polymer systems that exhibit cooperative reactions triggered by combined light and acid stimuli, as well as tunable photoreactivity based on reversible intramolecular isomerization. These systems show significant promise for a wide rang[...]


Our summary: This review discusses strategies for controlling the photostability and photoreactivity of polymer materials. It highlights the development of polymer systems that respond to combined light and acid stimuli. The findings suggest potential applications in light-induced degradation and processing in light-irradiated environments.

photocleavage, photostability, polymer networks, photoreactivity

Publication

Argomenti trattati: Cella posteriore e emettitore passivato, tecnologia PERC, passivazione dielettrica, campo di superficie posteriore in alluminio, Al2O3, SiNx, velocità di ricombinazione superficiale, durata dei portatori minoritari, contatti posteriori, ablazione laser, PECVD, deposizione ALD, metallizzazione serigrafata, profili di cottura, passivazione all'idrogeno, degradazione indotta dalla luce, difetti boro-ossigeno, ricottura di rigenerazione ISO 9001, IEC 61215, IEC 61730, IEC 62804 e ASTM E2848.

Glossario dei termini utilizzati

Chemical Vapor Deposition (CVD): Processo utilizzato per produrre film sottili o rivestimenti su substrati attraverso la reazione chimica di precursori gassosi, con conseguente deposizione di materiale solido. È comunemente impiegato nella produzione di semiconduttori e nella scienza dei materiali.

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