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Dernières publications — Brevets sur l'émetteur passivé et la cellule arrière (PERC)

Passivated Emitter and Rear Cell

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Perc technology
Perc technology enhances solar cell efficiency through dielectric passivation and optimized rear surface design.

La technologie PERC (Passivated Emitter and Rear Cell) étend les propriétés des cellules solaires conventionnelles à champ arrière en aluminium en introduisant une couche de passivation diélectrique — généralement Al₂O₃ recouverte de SiNₓ — sur la surface arrière du silicium. Cette couche supprime la recombinaison et améliore la réflectance interne arrière. Les gains de performance proviennent d'une vitesse de recombinaison de surface réduite, d'une durée de vie accrue des porteurs minoritaires et de contacts arrière locaux optimisés, ouverts par ablation laser.

L'intégration des procédés permet d'assurer l'uniformité des dépôts PECVD ou ALD, la métallisation sérigraphiée, les profils de cuisson et la dynamique de passivation par l'hydrogène. La dégradation photo-induite due aux défauts bore-oxygène et son atténuation par recuit de régénération demeurent un axe de recherche important.

Cette page regroupe les publications les plus récentes évaluées par des pairs et les brevets accordés couvrant la physique des cellules PERC, les procédés de fabrication, les variantes bifaciales et l'intégration au niveau du module :

Voici notre dernière sélection de publications et de brevets internationaux en anglais sur la cellule PERC (Passivated Emitter and Rear Cell), issus de nombreuses revues scientifiques en ligne, classés et axés sur la passivation de la surface arrière, la passivation à l'oxyde d'aluminium, la passivation au nitrure de silicium, le contact arrière local, l'ouverture du contact laser, la couche de passivation diélectrique, la vitesse de recombinaison de surface, la durée de vie des porteurs minoritaires, la réflectance arrière, l'efficacité quantique interne, la cellule PERC bifaciale, la cellule PERC+, l'émetteur arrière, le champ de surface avant, l'émetteur sélectif, la passivation à l'hydrogène, le processus de cuisson, le dépôt d'Al2O3, le dépôt PECVD, le dépôt ALD, l'ablation laser arrière, la résistance de contact, l'optimisation du facteur de remplissage, la dégradation induite par la lumière, le défaut bore-oxygène, le recuit de régénération, le processus de piégeage, la passivation des défauts de volume, l'amélioration de la tension en circuit ouvert, la métallisation sérigraphiée et la cellule PERC (Passivated Emitter and Rear Cell).

Rechargeable battery and battery pack including the same

Patent published on the 2026-10-07 in EP under Ref EP4819300 by SAMSUNG SDI CO LTD [KR] (Seong Yeon Kyeong [kr], Kim Hyun [kr])

Abstract: A battery and a battery pack including the same are disclosed. A battery of a battery pack having a cooling member includes an electrode assembly and a case in which the electrode assembly is accommodated, and a thermal contact resistance between the case and the electrode assembly in a first portion of the battery adjacent to the cooling member is greater than a thermal contact resistance between the case and the electrode assembly in a second portion of the battery that is farther from the coo[...]


Our summary: The content describes a rechargeable battery and battery pack with a cooling member. It highlights the thermal contact resistance differences between two portions of the battery. The design aims to improve thermal management in the battery system.

Rechargeable battery, battery pack, cooling member, thermal contact resistance

Patent

Ultrahigh bandgap algan channel hemts with low contact resistance

Patent published on the 2026-10-01 in US under Ref US20260303761 by WISCONSIN ALUMNI RES FOUND [US] (Pasayat Shubhra S [us], Mukhopadhyay Swarnav [us], Gupta Chirag [us], Gohel Khush [us])

Abstract: Aluminum gallium nitride (AlGaN) channel high electron mobility transistors (HEMTs), methods of operating the AlGaN HEMTs, and methods of making the AlGaN HEMTs are provided. The AlGaN HEMTs include source and drain contacts on a highly n-type doped, reverse graded AlGaN contact layer. At least a portion of the HEMT heterostructure is partially or fully strained relaxed to provide low contact resistance at the interface between the contact layer and the source and/or drain contact.[...]


Our summary: The content discusses ultrahigh bandgap AlGaN channel HEMTs with low contact resistance. It details methods for operating and fabricating these transistors. The HEMTs feature a reverse graded AlGaN contact layer with n-type doping and a strained relaxed heterostructure.

AlGaN, HEMTs, contact resistance, heterostructure

Patent

Tungsten-modified nickel-alumina composite catalyst prepared through one-pot firing process

Patent published on the 2026-10-01 in WO under Ref WO2026205711 by UNIV ULSAN FOUND IND COOP [KR] (Shin Eun Woo [kr], Jamsaz Azam [kr])

Abstract: The present invention relates to a catalyst manufacturing method in which a tungsten-modified nickel-alumina composite catalyst prepared through a one-pot firing process is charged into a reactor and subjected to an in-situ reduction treatment. According to the present invention, the addition of tungsten suppresses coke formation, and thus catalytic activity is excellent and persists without degrading even after a long reaction time.[...]


Our summary: The invention describes a method for manufacturing a tungsten-modified nickel-alumina composite catalyst using a one-pot firing process. This catalyst undergoes in-situ reduction treatment in a reactor. The addition of tungsten enhances catalytic activity and prevents coke formation, ensuring durability over extended reaction times.

Tungsten, nickel-alumina, composite catalyst, one-pot firing

Patent

Display device

Patent published on the 2026-09-24 in US under Ref US20260293397 by LG DISPLAY CO LTD [KR] (Na Hyunseok [kr], Kim Woosung [kr], Cho Seongsoo [kr], Shin Sanghak [kr])

Abstract: A display device includes a substrate having transistors and lower connection electrodes, insulating and protective layers disposed on the substrate, and an element disposed above an adhesive layer. An upper connection electrode has a concave end portion that laterally contacts side surfaces of an element contact electrode while also electrically connecting to a lower connection electrode through the adhesive layer. A further upper electrode connects another element contact electrode to an upper[...]


Our summary: A display device consists of a substrate with transistors and connection electrodes. It features a structure that maintains electrical coupling despite alignment variations. This design enhances contact area, reduces resistance, and simplifies assembly while lowering power consumption.

display device, transistors, electrical stability, power consumption

Patent

Ultrathin aluminum-rich capping layers for improving internal quantum efficiency in ultraviolet leds

Patent published on the 2026-09-03 in WO under Ref WO2026183559 by THE REGENTS OF THE UNIV OF CALIFORIA [US] (Wang Michael [us], Gong Wenting [us], Nakamura Shuji [us], Speck James S [us])

Abstract: With the use of ultrathin aluminum-rich capping layers, the efficiency of ultraviolet (UV) or far-UV light-emitting diodes (LEDs), laser diode (LDs), or other light-emitting devices is improved through the reduction of carrier loss due to electron overshoot and improved radiative efficiency through improved quantum confinement.[...]


Our summary: Ultrathin aluminum-rich capping layers enhance the internal quantum efficiency of ultraviolet LEDs. They reduce carrier loss caused by electron overshoot. Improved quantum confinement leads to better radiative efficiency in light-emitting devices.

Ultrathin layers, aluminum-rich, quantum efficiency, ultraviolet LEDs

Patent

Method for manufacturing electronic device board connector

Patent published on the 2026-08-13 in WO under Ref WO2026168639 by GTG SOLUTION CO LTD [KR] (Lim Jong-gae [kr])

Abstract: The present invention relates to a method for manufacturing an electronic device board connector. The objective of the present invention is to quickly and accurately manufacture a board connector, which has a connection pin, a spring part and a solder terminal integrally formed to have a constant contact resistance while not causing a connection resistance and not being affected by usage time. The present invention relates to the method for manufacturing an electronic device board connector, com[...]


Our summary: The invention describes a method for manufacturing an electronic device board connector. It includes a spring bending process, a connection pin compression binding process, and a spring-part matching and bending process. The goal is to create a connector with low contact resistance and high durability.

connector manufacturing, electronic device, spring bending process, connection pin

Patent

Material-specific lighting requirements and contemporary illumination strategies for galleries

Published on 2026-07-08 by @OXFORD

Abstract: AbstractMuseum lighting simultaneously governs visual presentation and light-induced degradation of artworks. With the widespread adoption of light emitting diode technologies, traditional illuminance- and dose-based standards are increasingly insufficient to address the heterogeneous photochemical responses of different materials. This review synthesizes recent research on material-specific lighting requirements and contemporary illumination strategies for galleries, focusing on spectral power [...]


Our summary: This review addresses material-specific lighting needs and modern strategies for gallery illumination. It highlights the varying sensitivity of artworks to different light wavelengths and the impact on visual presentation and degradation. Optimized lighting approaches can significantly enhance energy efficiency while preserving artwork integrity.

museum lighting, photochemical responses, illumination strategies, energy optimization

Publication

External control of photocleavage reactivity in polymer networks to reconcile photodegradability and photostability

Published on 2026-04-13 by Hiroshi Masai @NATURE

Abstract: Polymer Journal, Published online: 13 April 2026; doi:10.1038/s41428-026-01165-6This review summarizes our recent strategies for controlling the photostability and photoreactivity of polymer materials. Beyond conventional photoreactive polymers, we have developed polymer systems that exhibit cooperative reactions triggered by combined light and acid stimuli, as well as tunable photoreactivity based on reversible intramolecular isomerization. These systems show significant promise for a wide rang[...]


Our summary: This review discusses strategies for controlling the photostability and photoreactivity of polymer materials. It highlights the development of polymer systems that respond to combined light and acid stimuli. The findings suggest potential applications in light-induced degradation and processing in light-irradiated environments.

photocleavage, photostability, polymer networks, photoreactivity

Publication

Sujets abordés : Émetteur passivé et cellule arrière, technologie PERC, passivation diélectrique, champ de surface arrière en aluminium, Al2O3, SiNx, vitesse de recombinaison de surface, durée de vie des porteurs minoritaires, contacts arrière, ablation laser, PECVD, dépôt ALD, métallisation sérigraphiée, profils de cuisson, passivation à l'hydrogène, dégradation induite par la lumière, défauts bore-oxygène, recuit de régénération ISO 9001, IEC 61215, IEC 61730, IEC 62804 et ASTM E2848.

Glossaire des termes utilisés

Chemical Vapor Deposition (CVD): Procédé permettant de produire des films minces ou des revêtements sur des substrats par réaction chimique de précurseurs gazeux, entraînant le dépôt de matériaux solides. Il est couramment utilisé dans la fabrication de semi-conducteurs et la science des matériaux.

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