微型LED显示屏是一种发光平板显示屏。 技术 由无机氮化镓制成 发光二极管 这些芯片的单个像素尺寸通常小于100微米,在相同的像素密度下,其亮度、对比度和使用寿命均无法与OLED或LCD架构相媲美。 制造业 问题在于,如何以生产可行的速度和良率将数十亿个无缺陷的微芯片从外延晶片转移到有源矩阵背板上,这仍然是实验室演示与大众市场面板之间最大的瓶颈,并引发了激烈的争论。 专利 围绕传质方法、激光升空、自组装和基于冗余的修复策略开展的活动。.

在材料方面,芯片尺寸越小,效率越低,色彩转换也越复杂。 你给多少 滤波器,以及在单个氮化镓衬底上实现红、绿、蓝发射器的单片集成,都是活跃的研究前沿。.
下游应用领域包括 AR/VR 波导耦合微显示器、高亮度汽车 HUD、大尺寸直视视频墙以及 可穿戴 这些设备的功耗预算和外形尺寸决定了其发射效率不容妥协。.
下面列出的出版物和专利涵盖了这一完整堆栈——从外延生长和芯片单晶化到背板集成、驱动电路、色彩管理和系统级显示架构。
这是我们最新精选的有关 Micro-LED 显示器的全球出版物和专利,涉及许多科学在线期刊,分类并侧重于 Micro-LED、μLED、LED 外延、传质 Micro-LED、拾取和贴装 Micro-LED、Micro-LED 背板、TFT 背板 Micro-LED、Micro-LED 晶圆键合、LED 芯片单一化、Micro-LED 像素间距、单片式 Micro-LED、Micro-LED 阵列、GaN micro-LED 和 micro LED。.
出版: 没有关于此特定主题的最新消息。请尝试在上面链接的出版物数据库中进行广泛的人工搜索。
Micro-led with improved light extraction efficiency
Patent published on the 2026-06-11 in US under Ref US20260164855 by META PLATFORMS TECH LLC [US] (Mezouari Samir [gb], Breakspear Robert Leslie [gb])
Abstract: [0000] A micro-LED includes a mesa structure and a tapered dielectric waveguide. The mesa structure includes a quantum well region disposed between an n-doped semiconductor layer and a p-doped semiconductor region. The n-doped semiconductor layer forms a tapered semiconductor pre-waveguide. The tapered dielectric waveguide has a lower refractive index than a higher refractive index of the tapered semiconductor pre-waveguide.[...]
Our summary: The micro-LED features a mesa structure with a quantum well region. It includes a tapered semiconductor pre-waveguide and a tapered dielectric waveguide. The dielectric waveguide has a lower refractive index compared to the semiconductor pre-waveguide.
micro-LED, light extraction, mesa structure, dielectric waveguide
Patent
Mechanisms for fabricating micro-leds
Patent published on the 2026-06-04 in US under Ref US20260156990 by SAPHLUX LLC [US] (Chen Chen [us], Song Jie [us])
Abstract: [0000] In some embodiments, methods for fabricating micro-LEDs may include bonding a semiconductor wafer to a Complementary Metal-Oxide-Semiconductor (CMOS) wafer via one or more adhesive layers, etching the LED epilayer and the one or more adhesive layers to form a plurality of micro-LED structures, and fabricating an electrode layer on the plurality of microLED structures. The semiconductor wafer may include an LED epilayer that may include an n-GaN layer, a p-GaN layer, and an active layer po[...]
Our summary: Methods for fabricating micro-LEDs involve bonding a semiconductor wafer to a CMOS wafer with adhesive layers. The process includes etching to form micro-LED structures and fabricating an electrode layer. A stress release pattern with geometrical shapes aids in managing mechanical stresses during fabrication.
micro-LEDs, semiconductor wafer, CMOS, fabrication
Patent
Partially stacking polychrome micro-led pixel
Patent published on the 2026-05-21 in WO under Ref WO2026102949 by JADE BIRD DISPLAY SHANGHAI LTD [CN] (Xu Qunchao [cn], Wei-sin Tan [cn])
Abstract: A polychrome Micro-LED pixel is provided. The pixel comprises: a first metal pillar formed on a substrate; a first LED structure that emits a first color, wherein the first LED structure is positioned on the first metal pillar; a second LED structure that emits a second color; a third LED structure that emits a third color, wherein the third LED structure is formed on the substrate, and the second LED structure is positioned above the third LED structure; a first conductive structure and a secon[...]
Our summary: The content describes a polychrome Micro-LED pixel with multiple color-emitting LED structures. It features a first metal pillar on a substrate supporting the first LED structure. Additionally, it includes conductive structures surrounding the LED components for electrical connectivity.
Micro-LED, Polychrome, Pixel Structure, Conductive Design
Patent
Polychrome micro-led pixel with non-coaxial stacking led structure
Patent published on the 2026-05-21 in WO under Ref WO2026103078 by JADE BIRD DISPLAY SHANGHAI LTD [CN] (Xu Qunchao [cn], Tan Wei-sin [cn])
Abstract: A polychrome Micro-LED pixel, comprising: a first LED structure that emits a first color, wherein the first LED structure is formed on a substrate; a first metal pillar formed on the substrate; a second LED structure that emits a second color, wherein the second LED structure is positioned on the first metal pillar; a first air gap around the first LED structure; a second air gap around the second LED structure; and a conductive structure surrounding the first LED structure and the second LED st[...]
Our summary: The content describes a polychrome Micro-LED pixel with a unique stacking design. It includes multiple LED structures emitting different colors, positioned on a substrate. The design features air gaps and a conductive structure for enhanced performance.
Micro-LED, pixel structure, non-coaxial stacking, conductive structure
Patent
Low power micro-led driver for high bandwidth short distance communication
Patent published on the 2026-05-07 in US under Ref US20260128800 by HYPERLUME INC [CA] (Nabavi Morteza [ca], Fariborzi Hossein [us], Nabavi Abdolreza [ca], Asad Mohsen [ca])
Abstract: [0000] A driver circuit for supplying and regulating power to a micro light-emitting diode (micro-LED), the driver circuitry comprising: at least one inverter; a first capacitance; a resistor coupled to ground; a fast switch comprising at least one first transistor; and a slow switch comprising at least one second transistor; whereby at least one of a rising time, a peaking effect, and LED power is increased.[...]
Our summary: This document describes a driver circuit designed for micro-LEDs. It includes components such as inverters, capacitors, and transistors. The circuit aims to enhance performance parameters like rising time and LED power.
micro-LED, driver circuit, low power, high bandwidth
Patent











