Micro-LED displays are emissive flat-panel tecnologías built from inorganic gallium nitride LED con dimensiones de píxel individuales normalmente inferiores a 100 micrómetros, que ofrecen niveles de luminancia, relaciones de contraste y vida útil que ni las arquitecturas OLED ni LCD pueden igualar con densidades de píxel equivalentes. El problema fundamental de la fabricación -transferir miles de millones de microplaquitas sin defectos desde obleas epitaxiales a placas base de matriz activa a una velocidad y un rendimiento viables para la producción- sigue siendo el principal cuello de botella que separa las demostraciones de laboratorio de los paneles para el mercado de masas, lo que ha provocado una intensa competencia entre los fabricantes de pantallas OLED y LCD. patentar actividad en torno a métodos de transferencia de masa, despegue por láser, autoensamblaje y estrategias de reparación basadas en la redundancia.

Por el lado de los materiales, la caída de la eficiencia con dimensiones de chip pequeñas, la conversión del color mediante ¿Cuánto das? y la integración monolítica de emisores rojos, verdes y azules en un único sustrato de GaN son frentes de investigación activos.
Las aplicaciones posteriores abarcan micropantallas de AR/VR acopladas por guía de ondas, HUD de alto brillo para automóviles, videowalls de visión directa de gran formato, y wearable dispositivos en los que el presupuesto de energía y el factor de forma hacen que la eficiencia emisiva no sea negociable.
Las publicaciones y patentes que se indexan a continuación abarcan todo este proceso, desde el crecimiento epitaxial y la separación de chips hasta la integración del plano posterior, los circuitos de control, la gestión del color y la arquitectura de visualización a nivel de sistema.
Esta es nuestra última selección de publicaciones y patentes mundiales en inglés sobre Micro-LED Displays, entre muchas revistas científicas en línea, clasificadas y centradas en Micro-LED, μLED, epitaxia LED, micro-LED de transferencia de masa, micro-LED pick-and-place, micro-LED backplane, micro-LED TFT backplane, micro-LED wafer bonding, LED chip singulation, micro-LED pixel pitch, micro-LED monolítico, micro-LED array, GaN micro-LED y micro LED.
Publicación: no hay noticias recientes sobre este tema en particular. Pruebe a realizar una búsqueda manual exhaustiva en la base de datos de publicaciones a la que se hace referencia más arriba.
Partially stacking polychrome micro-led pixel
Patent published on the 2026-05-21 in WO under Ref WO2026102949 by JADE BIRD DISPLAY SHANGHAI LTD [CN] (Xu Qunchao [cn], Wei-sin Tan [cn])
Abstract: A polychrome Micro-LED pixel is provided. The pixel comprises: a first metal pillar formed on a substrate; a first LED structure that emits a first color, wherein the first LED structure is positioned on the first metal pillar; a second LED structure that emits a second color; a third LED structure that emits a third color, wherein the third LED structure is formed on the substrate, and the second LED structure is positioned above the third LED structure; a first conductive structure and a secon[...]
Our summary: The content describes a polychrome Micro-LED pixel with multiple color-emitting LED structures. It features a first metal pillar on a substrate supporting the first LED structure. Additionally, it includes conductive structures surrounding the LED components for electrical connectivity.
Micro-LED, Polychrome, Pixel Structure, Conductive Design
Patent
Polychrome micro-led pixel with non-coaxial stacking led structure
Patent published on the 2026-05-21 in WO under Ref WO2026103078 by JADE BIRD DISPLAY SHANGHAI LTD [CN] (Xu Qunchao [cn], Tan Wei-sin [cn])
Abstract: A polychrome Micro-LED pixel, comprising: a first LED structure that emits a first color, wherein the first LED structure is formed on a substrate; a first metal pillar formed on the substrate; a second LED structure that emits a second color, wherein the second LED structure is positioned on the first metal pillar; a first air gap around the first LED structure; a second air gap around the second LED structure; and a conductive structure surrounding the first LED structure and the second LED st[...]
Our summary: The content describes a polychrome Micro-LED pixel with a unique stacking design. It includes multiple LED structures emitting different colors, positioned on a substrate. The design features air gaps and a conductive structure for enhanced performance.
Micro-LED, pixel structure, non-coaxial stacking, conductive structure
Patent
Low power micro-led driver for high bandwidth short distance communication
Patent published on the 2026-05-07 in US under Ref US20260128800 by HYPERLUME INC [CA] (Nabavi Morteza [ca], Fariborzi Hossein [us], Nabavi Abdolreza [ca], Asad Mohsen [ca])
Abstract: [0000] A driver circuit for supplying and regulating power to a micro light-emitting diode (micro-LED), the driver circuitry comprising: at least one inverter; a first capacitance; a resistor coupled to ground; a fast switch comprising at least one first transistor; and a slow switch comprising at least one second transistor; whereby at least one of a rising time, a peaking effect, and LED power is increased.[...]
Our summary: This document describes a driver circuit designed for micro-LEDs. It includes components such as inverters, capacitors, and transistors. The circuit aims to enhance performance parameters like rising time and LED power.
micro-LED, driver circuit, low power, high bandwidth
Patent
Micro-led module, display device including same, and method for manufacturing display device
Patent published on the 2025-12-11 in WO under Ref WO2025254237 by LG ELECTRONICS INC [KR] (Kim Naree [kr], Hwang Eunjung [kr], Kim Jaeyoung [kr])
Abstract: The present invention relates to a micro-LED module, a display device including same, and a manufacturing process for the display device. The micro-LED module according to an embodiment includes: a substrate; a semiconductor light-emitting device electrically connected to the substrate; and a first coating layer disposed on the semiconductor light-emitting device and the substrate, wherein at least a portion of a side surface of the first coating layer may be formed as an inclined surface with r[...]
Our summary: The invention involves a micro-LED module and a display device that incorporates it. The module features a substrate and a semiconductor light-emitting device with a specific coating layer. This design allows for stable and economical implementation of curved display devices for digital signage.
micro-LED, display device, manufacturing process, semiconductor
Patent
Micro-led display panel and pixel driving circuit thereof
Patent published on the 2025-12-04 in US under Ref US2025372024 by AUO CORP [TW] (Lin Chih-yang [tw], Wei Fu-cheng [tw])
Abstract: A micro-LED display panel and its pixel driving circuit are provided. A first multiplexer switches a base frequency clock signal to a frequency divider circuit or a first bit counter according to a grayscale data signal. The frequency divider circuit divides the base frequency clock signal transmitted by the first multiplexer into a divided base frequency clock signal. The first bit counter counts the base frequency clock signal transmitted by the first multiplexer to generate a first switching [...]
Our summary: The document describes a micro-LED display panel and its pixel driving circuit. It details a multiplexer that manages clock signals based on grayscale data. Additionally, it explains how bit counters and a switch controller operate to manage pixel circuits.
micro-LED, display panel, pixel driving, frequency divider
Patent
Cladding-less gan-based thin-film edge-emitting laser
Patent published on the 2025-09-18 in US under Ref US2025293484 by THE UNIV OF HONG KONG [CN] (Choi Hoi Wai [cn], Fu Wai Yuen [cn])
Abstract: A cladding-less GaN-based thin-film edge-emitting laser is formed by: attaching a typical LED wafer to a substrate; removing its sapphire substrate to expose its n-GaN and the u-GaN buffer layers; thinning the film thickness to maximize the overlap factor; depositing another reflective metallic layer on the n-GaN surface for optical confinement and electrical contact; defining a pattern of the edge-emitting cavity by nanolithography techniques; and using an ICP etch to transfer the pattern to th[...]
Our summary: A cladding-less GaN-based thin-film edge-emitting laser is created by attaching an LED wafer to a substrate and removing the sapphire substrate. The film thickness is reduced to enhance the overlap factor, followed by the deposition of a reflective metallic layer for optical confinement. Additional embodiments involve bonding the LED structure to a substrate with a Bragg reflector and utilizing Distributed Bragg Reflectors on both sides for polariton edge-emitting lasers.
Cladding-less, GaN-based, thin-film, edge-emitting
Patent