Micro-LED displays are emissive flat-panel tecnologías built from inorganic gallium nitride LED con dimensiones de píxel individuales normalmente inferiores a 100 micrómetros, que ofrecen niveles de luminancia, relaciones de contraste y vida útil que ni las arquitecturas OLED ni LCD pueden igualar con densidades de píxel equivalentes. El problema fundamental de la fabricación -transferir miles de millones de microplaquitas sin defectos desde obleas epitaxiales a placas base de matriz activa a una velocidad y un rendimiento viables para la producción- sigue siendo el principal cuello de botella que separa las demostraciones de laboratorio de los paneles para el mercado de masas, lo que ha provocado una intensa competencia entre los fabricantes de pantallas OLED y LCD. patentar actividad en torno a métodos de transferencia de masa, despegue por láser, autoensamblaje y estrategias de reparación basadas en la redundancia.

Por el lado de los materiales, la caída de la eficiencia con dimensiones de chip pequeñas, la conversión del color mediante ¿Cuánto das? y la integración monolítica de emisores rojos, verdes y azules en un único sustrato de GaN son frentes de investigación activos.
Las aplicaciones posteriores abarcan micropantallas de AR/VR acopladas por guía de ondas, HUD de alto brillo para automóviles, videowalls de visión directa de gran formato, y wearable dispositivos en los que el presupuesto de energía y el factor de forma hacen que la eficiencia emisiva no sea negociable.
Las publicaciones y patentes que se indexan a continuación abarcan todo este proceso, desde el crecimiento epitaxial y la separación de chips hasta la integración del plano posterior, los circuitos de control, la gestión del color y la arquitectura de visualización a nivel de sistema.
Esta es nuestra última selección de publicaciones y patentes mundiales en inglés sobre Micro-LED Displays, entre muchas revistas científicas en línea, clasificadas y centradas en Micro-LED, μLED, epitaxia LED, micro-LED de transferencia de masa, micro-LED pick-and-place, micro-LED backplane, micro-LED TFT backplane, micro-LED wafer bonding, LED chip singulation, micro-LED pixel pitch, micro-LED monolítico, micro-LED array, GaN micro-LED y micro LED.
Publicación: no hay noticias recientes sobre este tema en particular. Pruebe a realizar una búsqueda manual exhaustiva en la base de datos de publicaciones a la que se hace referencia más arriba.
Micro-led with improved light extraction efficiency
Patent published on the 2026-06-11 in US under Ref US20260164855 by META PLATFORMS TECH LLC [US] (Mezouari Samir [gb], Breakspear Robert Leslie [gb])
Abstract: [0000] A micro-LED includes a mesa structure and a tapered dielectric waveguide. The mesa structure includes a quantum well region disposed between an n-doped semiconductor layer and a p-doped semiconductor region. The n-doped semiconductor layer forms a tapered semiconductor pre-waveguide. The tapered dielectric waveguide has a lower refractive index than a higher refractive index of the tapered semiconductor pre-waveguide.[...]
Our summary: The micro-LED features a mesa structure with a quantum well region. It includes a tapered semiconductor pre-waveguide and a tapered dielectric waveguide. The dielectric waveguide has a lower refractive index compared to the semiconductor pre-waveguide.
micro-LED, light extraction, mesa structure, dielectric waveguide
Patent
Mechanisms for fabricating micro-leds
Patent published on the 2026-06-04 in US under Ref US20260156990 by SAPHLUX LLC [US] (Chen Chen [us], Song Jie [us])
Abstract: [0000] In some embodiments, methods for fabricating micro-LEDs may include bonding a semiconductor wafer to a Complementary Metal-Oxide-Semiconductor (CMOS) wafer via one or more adhesive layers, etching the LED epilayer and the one or more adhesive layers to form a plurality of micro-LED structures, and fabricating an electrode layer on the plurality of microLED structures. The semiconductor wafer may include an LED epilayer that may include an n-GaN layer, a p-GaN layer, and an active layer po[...]
Our summary: Methods for fabricating micro-LEDs involve bonding a semiconductor wafer to a CMOS wafer with adhesive layers. The process includes etching to form micro-LED structures and fabricating an electrode layer. A stress release pattern with geometrical shapes aids in managing mechanical stresses during fabrication.
micro-LEDs, semiconductor wafer, CMOS, fabrication
Patent
Partially stacking polychrome micro-led pixel
Patent published on the 2026-05-21 in WO under Ref WO2026102949 by JADE BIRD DISPLAY SHANGHAI LTD [CN] (Xu Qunchao [cn], Wei-sin Tan [cn])
Abstract: A polychrome Micro-LED pixel is provided. The pixel comprises: a first metal pillar formed on a substrate; a first LED structure that emits a first color, wherein the first LED structure is positioned on the first metal pillar; a second LED structure that emits a second color; a third LED structure that emits a third color, wherein the third LED structure is formed on the substrate, and the second LED structure is positioned above the third LED structure; a first conductive structure and a secon[...]
Our summary: The content describes a polychrome Micro-LED pixel with multiple color-emitting LED structures. It features a first metal pillar on a substrate supporting the first LED structure. Additionally, it includes conductive structures surrounding the LED components for electrical connectivity.
Micro-LED, Polychrome, Pixel Structure, Conductive Design
Patent
Polychrome micro-led pixel with non-coaxial stacking led structure
Patent published on the 2026-05-21 in WO under Ref WO2026103078 by JADE BIRD DISPLAY SHANGHAI LTD [CN] (Xu Qunchao [cn], Tan Wei-sin [cn])
Abstract: A polychrome Micro-LED pixel, comprising: a first LED structure that emits a first color, wherein the first LED structure is formed on a substrate; a first metal pillar formed on the substrate; a second LED structure that emits a second color, wherein the second LED structure is positioned on the first metal pillar; a first air gap around the first LED structure; a second air gap around the second LED structure; and a conductive structure surrounding the first LED structure and the second LED st[...]
Our summary: The content describes a polychrome Micro-LED pixel with a unique stacking design. It includes multiple LED structures emitting different colors, positioned on a substrate. The design features air gaps and a conductive structure for enhanced performance.
Micro-LED, pixel structure, non-coaxial stacking, conductive structure
Patent
Low power micro-led driver for high bandwidth short distance communication
Patent published on the 2026-05-07 in US under Ref US20260128800 by HYPERLUME INC [CA] (Nabavi Morteza [ca], Fariborzi Hossein [us], Nabavi Abdolreza [ca], Asad Mohsen [ca])
Abstract: [0000] A driver circuit for supplying and regulating power to a micro light-emitting diode (micro-LED), the driver circuitry comprising: at least one inverter; a first capacitance; a resistor coupled to ground; a fast switch comprising at least one first transistor; and a slow switch comprising at least one second transistor; whereby at least one of a rising time, a peaking effect, and LED power is increased.[...]
Our summary: This document describes a driver circuit designed for micro-LEDs. It includes components such as inverters, capacitors, and transistors. The circuit aims to enhance performance parameters like rising time and LED power.
micro-LED, driver circuit, low power, high bandwidth
Patent











