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Ultime pubblicazioni e brevetti sui display a micro LED

Display a micro LED

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Micro-LED displays are emissive flat-panel tecnologie built from inorganic gallium nitride LED chips with individual pixel dimensions typically below 100 micrometres, delivering luminance levels, contrast ratios, and operational lifespans that neither OLED nor LCD architectures can match at equivalent pixel densities. The fundamental produzione problem — transferring billions of defect-free microscale die from epitaxial wafers onto active-matrix backplanes at production-viable speed and yield — remains the central bottleneck separating laboratory demonstrations from mass-market panels, driving intense brevetto attività che riguardano i metodi di trasferimento di massa, il laser lift-off, l'autoassemblaggio e le strategie di riparazione basate sulla ridondanza.

Display a micro-LED
La tecnologia a micro-LED si trova ad affrontare sfide produttive nella scalabilità della produzione di display per il mercato di massa, garantendo l'assenza di difetti.

Dal punto di vista dei materiali, il calo di efficienza in presenza di chip di dimensioni ridotte, la conversione del colore tramite quantum dot e l'integrazione monolitica di emettitori rossi, verdi e blu su un unico substrato di GaN sono fronti di ricerca attivi.

Le applicazioni a valle comprendono microdisplay ad accoppiamento di guida d'onda per AR/VR, HUD per autoveicoli ad alta luminosità, pareti video a visione diretta di grande formato e indossabile dispositivi in cui il budget di potenza e il fattore di forma rendono l'efficienza emissiva non negoziabile.

Le pubblicazioni e i brevetti elencati di seguito coprono l'intera gamma di tecnologie, dalla crescita epitassiale e dalla singolarizzazione dei chip all'integrazione del backplane, ai circuiti di pilotaggio, alla gestione del colore e all'architettura di visualizzazione a livello di sistema.

Questa è la nostra ultima selezione di pubblicazioni e brevetti in inglese sui display a micro-LED, tra numerose riviste scientifiche online, classificate e incentrate su Micro-LED, μLED, epitassia di LED, micro-LED a trasferimento di massa, micro-LED pick-and-place, backplane di micro-LED, backplane di TFT a micro-LED, incollaggio di wafer di micro-LED, singolazione di chip di LED, passo di pixel di micro-LED, micro-LED monolitici, array di micro-LED, micro-LED GaN e micro LED.

Pubblicazione: Non ci sono notizie recenti su questo particolare argomento. Provate a effettuare una ricerca manuale approfondita nel Database delle pubblicazioni, linkato poco sopra.

Partially stacking polychrome micro-led pixel

Patent published on the 2026-05-21 in WO under Ref WO2026102949 by JADE BIRD DISPLAY SHANGHAI LTD [CN] (Xu Qunchao [cn], Wei-sin Tan [cn])

Abstract: A polychrome Micro-LED pixel is provided. The pixel comprises: a first metal pillar formed on a substrate; a first LED structure that emits a first color, wherein the first LED structure is positioned on the first metal pillar; a second LED structure that emits a second color; a third LED structure that emits a third color, wherein the third LED structure is formed on the substrate, and the second LED structure is positioned above the third LED structure; a first conductive structure and a secon[...]


Our summary: The content describes a polychrome Micro-LED pixel with multiple color-emitting LED structures. It features a first metal pillar on a substrate supporting the first LED structure. Additionally, it includes conductive structures surrounding the LED components for electrical connectivity.

Micro-LED, Polychrome, Pixel Structure, Conductive Design

Patent

Polychrome micro-led pixel with non-coaxial stacking led structure

Patent published on the 2026-05-21 in WO under Ref WO2026103078 by JADE BIRD DISPLAY SHANGHAI LTD [CN] (Xu Qunchao [cn], Tan Wei-sin [cn])

Abstract: A polychrome Micro-LED pixel, comprising: a first LED structure that emits a first color, wherein the first LED structure is formed on a substrate; a first metal pillar formed on the substrate; a second LED structure that emits a second color, wherein the second LED structure is positioned on the first metal pillar; a first air gap around the first LED structure; a second air gap around the second LED structure; and a conductive structure surrounding the first LED structure and the second LED st[...]


Our summary: The content describes a polychrome Micro-LED pixel with a unique stacking design. It includes multiple LED structures emitting different colors, positioned on a substrate. The design features air gaps and a conductive structure for enhanced performance.

Micro-LED, pixel structure, non-coaxial stacking, conductive structure

Patent

Low power micro-led driver for high bandwidth short distance communication

Patent published on the 2026-05-07 in US under Ref US20260128800 by HYPERLUME INC [CA] (Nabavi Morteza [ca], Fariborzi Hossein [us], Nabavi Abdolreza [ca], Asad Mohsen [ca])

Abstract: [0000] A driver circuit for supplying and regulating power to a micro light-emitting diode (micro-LED), the driver circuitry comprising: at least one inverter; a first capacitance; a resistor coupled to ground; a fast switch comprising at least one first transistor; and a slow switch comprising at least one second transistor; whereby at least one of a rising time, a peaking effect, and LED power is increased.[...]


Our summary: This document describes a driver circuit designed for micro-LEDs. It includes components such as inverters, capacitors, and transistors. The circuit aims to enhance performance parameters like rising time and LED power.

micro-LED, driver circuit, low power, high bandwidth

Patent

Micro-led module, display device including same, and method for manufacturing display device

Patent published on the 2025-12-11 in WO under Ref WO2025254237 by LG ELECTRONICS INC [KR] (Kim Naree [kr], Hwang Eunjung [kr], Kim Jaeyoung [kr])

Abstract: The present invention relates to a micro-LED module, a display device including same, and a manufacturing process for the display device. The micro-LED module according to an embodiment includes: a substrate; a semiconductor light-emitting device electrically connected to the substrate; and a first coating layer disposed on the semiconductor light-emitting device and the substrate, wherein at least a portion of a side surface of the first coating layer may be formed as an inclined surface with r[...]


Our summary: The invention involves a micro-LED module and a display device that incorporates it. The module features a substrate and a semiconductor light-emitting device with a specific coating layer. This design allows for stable and economical implementation of curved display devices for digital signage.

micro-LED, display device, manufacturing process, semiconductor

Patent

Micro-led display panel and pixel driving circuit thereof

Patent published on the 2025-12-04 in US under Ref US2025372024 by AUO CORP [TW] (Lin Chih-yang [tw], Wei Fu-cheng [tw])

Abstract: A micro-LED display panel and its pixel driving circuit are provided. A first multiplexer switches a base frequency clock signal to a frequency divider circuit or a first bit counter according to a grayscale data signal. The frequency divider circuit divides the base frequency clock signal transmitted by the first multiplexer into a divided base frequency clock signal. The first bit counter counts the base frequency clock signal transmitted by the first multiplexer to generate a first switching [...]


Our summary: The document describes a micro-LED display panel and its pixel driving circuit. It details a multiplexer that manages clock signals based on grayscale data. Additionally, it explains how bit counters and a switch controller operate to manage pixel circuits.

micro-LED, display panel, pixel driving, frequency divider

Patent

Cladding-less gan-based thin-film edge-emitting laser

Patent published on the 2025-09-18 in US under Ref US2025293484 by THE UNIV OF HONG KONG [CN] (Choi Hoi Wai [cn], Fu Wai Yuen [cn])

Abstract: A cladding-less GaN-based thin-film edge-emitting laser is formed by: attaching a typical LED wafer to a substrate; removing its sapphire substrate to expose its n-GaN and the u-GaN buffer layers; thinning the film thickness to maximize the overlap factor; depositing another reflective metallic layer on the n-GaN surface for optical confinement and electrical contact; defining a pattern of the edge-emitting cavity by nanolithography techniques; and using an ICP etch to transfer the pattern to th[...]


Our summary: A cladding-less GaN-based thin-film edge-emitting laser is created by attaching an LED wafer to a substrate and removing the sapphire substrate. The film thickness is reduced to enhance the overlap factor, followed by the deposition of a reflective metallic layer for optical confinement. Additional embodiments involve bonding the LED structure to a substrate with a Bragg reflector and utilizing Distributed Bragg Reflectors on both sides for polariton edge-emitting lasers.

Cladding-less, GaN-based, thin-film, edge-emitting

Patent

Argomenti trattati: Micro-LED, display emissivi, nitruro di gallio, dimensioni dei pixel, livelli di luminanza, rapporti di contrasto, durata di vita operativa, metodi di trasferimento di massa, laser lift-off, autoassemblaggio, calo di efficienza, filtri a punti quantici, integrazione monolitica, AR/VR, HUD automobilistici, videowall a visione diretta, dispositivi indossabili, architettura dei display ISO/IEC 61966, IEC 62341, ISO 9241, ISO/IEC 29170 e IEC 62832.

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