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Publicações recentes – Patentes em displays micro-LED

Displays de micro-LED

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Os displays Micro-LED são telas planas emissivas. tecnologias construído a partir de nitreto de gálio inorgânico LIDERADO chips with individual pixel dimensions typically below 100 micrometres, delivering luminance levels, contrast ratios, and operational lifespans that neither OLED nor LCD architectures can match at equivalent pixel densities. The fundamental fabricação problem — transferring billions of defect-free microscale die from epitaxial wafers onto active-matrix backplanes at production-viable speed and yield — remains the central bottleneck separating laboratory demonstrations from mass-market panels, driving intense patente Atividades relacionadas a métodos de transferência de massa, remoção a laser, auto-montagem e estratégias de reparo baseadas em redundância.

Micro-led displays
A tecnologia micro-LED enfrenta desafios de fabricação para ampliar a produção sem defeitos de displays para o mercado de massa.

Em relação aos materiais, a eficiência diminui em dimensões de chip pequenas, conversão de cores via ponto quântico Filtros e a integração monolítica de emissores vermelhos, verdes e azuis em um único substrato de GaN são frentes de pesquisa ativas.

As aplicações subsequentes abrangem microdisplays acoplados a guias de onda para realidade aumentada/realidade virtual, HUDs automotivos de alto brilho, videowalls de visualização direta de grande formato e vestível Dispositivos em que o consumo de energia e o formato tornam a eficiência emissiva imprescindível.

As publicações e patentes indexadas abaixo abrangem toda essa cadeia — desde o crescimento epitaxial e a separação de chips até a integração do backplane, circuitos de acionamento, gerenciamento de cores e arquitetura de tela em nível de sistema.

Esta é a nossa mais recente seleção de publicações e patentes mundiais em inglês sobre displays Micro-LED, provenientes de diversos periódicos científicos online, classificadas e focadas em Micro-LED, μLED, epitaxia de LED, transferência em massa de micro-LED, micro-LED pick-and-place, backplane de micro-LED, backplane TFT de micro-LED, colagem de wafers de micro-LED, singulação de chips de LED, espaçamento de pixels de micro-LED, micro-LED monolítico, matriz de micro-LED, micro-LED de GaN e micro-LED.

Publication: no recent news on this particular topic. Please try the extensive manual search in the Publication Database linked just above.

Partially stacking polychrome micro-led pixel

Patent published on the 2026-05-21 in WO under Ref WO2026102949 by JADE BIRD DISPLAY SHANGHAI LTD [CN] (Xu Qunchao [cn], Wei-sin Tan [cn])

Abstract: A polychrome Micro-LED pixel is provided. The pixel comprises: a first metal pillar formed on a substrate; a first LED structure that emits a first color, wherein the first LED structure is positioned on the first metal pillar; a second LED structure that emits a second color; a third LED structure that emits a third color, wherein the third LED structure is formed on the substrate, and the second LED structure is positioned above the third LED structure; a first conductive structure and a secon[...]


Our summary: The content describes a polychrome Micro-LED pixel with multiple color-emitting LED structures. It features a first metal pillar on a substrate supporting the first LED structure. Additionally, it includes conductive structures surrounding the LED components for electrical connectivity.

Micro-LED, Polychrome, Pixel Structure, Conductive Design

Patent

Polychrome micro-led pixel with non-coaxial stacking led structure

Patent published on the 2026-05-21 in WO under Ref WO2026103078 by JADE BIRD DISPLAY SHANGHAI LTD [CN] (Xu Qunchao [cn], Tan Wei-sin [cn])

Abstract: A polychrome Micro-LED pixel, comprising: a first LED structure that emits a first color, wherein the first LED structure is formed on a substrate; a first metal pillar formed on the substrate; a second LED structure that emits a second color, wherein the second LED structure is positioned on the first metal pillar; a first air gap around the first LED structure; a second air gap around the second LED structure; and a conductive structure surrounding the first LED structure and the second LED st[...]


Our summary: The content describes a polychrome Micro-LED pixel with a unique stacking design. It includes multiple LED structures emitting different colors, positioned on a substrate. The design features air gaps and a conductive structure for enhanced performance.

Micro-LED, pixel structure, non-coaxial stacking, conductive structure

Patent

Low power micro-led driver for high bandwidth short distance communication

Patent published on the 2026-05-07 in US under Ref US20260128800 by HYPERLUME INC [CA] (Nabavi Morteza [ca], Fariborzi Hossein [us], Nabavi Abdolreza [ca], Asad Mohsen [ca])

Abstract: [0000] A driver circuit for supplying and regulating power to a micro light-emitting diode (micro-LED), the driver circuitry comprising: at least one inverter; a first capacitance; a resistor coupled to ground; a fast switch comprising at least one first transistor; and a slow switch comprising at least one second transistor; whereby at least one of a rising time, a peaking effect, and LED power is increased.[...]


Our summary: This document describes a driver circuit designed for micro-LEDs. It includes components such as inverters, capacitors, and transistors. The circuit aims to enhance performance parameters like rising time and LED power.

micro-LED, driver circuit, low power, high bandwidth

Patent

Micro-led module, display device including same, and method for manufacturing display device

Patent published on the 2025-12-11 in WO under Ref WO2025254237 by LG ELECTRONICS INC [KR] (Kim Naree [kr], Hwang Eunjung [kr], Kim Jaeyoung [kr])

Abstract: The present invention relates to a micro-LED module, a display device including same, and a manufacturing process for the display device. The micro-LED module according to an embodiment includes: a substrate; a semiconductor light-emitting device electrically connected to the substrate; and a first coating layer disposed on the semiconductor light-emitting device and the substrate, wherein at least a portion of a side surface of the first coating layer may be formed as an inclined surface with r[...]


Our summary: The invention involves a micro-LED module and a display device that incorporates it. The module features a substrate and a semiconductor light-emitting device with a specific coating layer. This design allows for stable and economical implementation of curved display devices for digital signage.

micro-LED, display device, manufacturing process, semiconductor

Patent

Micro-led display panel and pixel driving circuit thereof

Patent published on the 2025-12-04 in US under Ref US2025372024 by AUO CORP [TW] (Lin Chih-yang [tw], Wei Fu-cheng [tw])

Abstract: A micro-LED display panel and its pixel driving circuit are provided. A first multiplexer switches a base frequency clock signal to a frequency divider circuit or a first bit counter according to a grayscale data signal. The frequency divider circuit divides the base frequency clock signal transmitted by the first multiplexer into a divided base frequency clock signal. The first bit counter counts the base frequency clock signal transmitted by the first multiplexer to generate a first switching [...]


Our summary: The document describes a micro-LED display panel and its pixel driving circuit. It details a multiplexer that manages clock signals based on grayscale data. Additionally, it explains how bit counters and a switch controller operate to manage pixel circuits.

micro-LED, display panel, pixel driving, frequency divider

Patent

Cladding-less gan-based thin-film edge-emitting laser

Patent published on the 2025-09-18 in US under Ref US2025293484 by THE UNIV OF HONG KONG [CN] (Choi Hoi Wai [cn], Fu Wai Yuen [cn])

Abstract: A cladding-less GaN-based thin-film edge-emitting laser is formed by: attaching a typical LED wafer to a substrate; removing its sapphire substrate to expose its n-GaN and the u-GaN buffer layers; thinning the film thickness to maximize the overlap factor; depositing another reflective metallic layer on the n-GaN surface for optical confinement and electrical contact; defining a pattern of the edge-emitting cavity by nanolithography techniques; and using an ICP etch to transfer the pattern to th[...]


Our summary: A cladding-less GaN-based thin-film edge-emitting laser is created by attaching an LED wafer to a substrate and removing the sapphire substrate. The film thickness is reduced to enhance the overlap factor, followed by the deposition of a reflective metallic layer for optical confinement. Additional embodiments involve bonding the LED structure to a substrate with a Bragg reflector and utilizing Distributed Bragg Reflectors on both sides for polariton edge-emitting lasers.

Cladding-less, GaN-based, thin-film, edge-emitting

Patent

Tópicos abordados: Micro-LED, displays emissivos, nitreto de gálio, dimensões de pixels, níveis de luminância, taxas de contraste, vida útil operacional, métodos de transferência de massa, remoção a laser, automontagem, queda de eficiência, filtros de pontos quânticos, integração monolítica, AR/VR, HUDs automotivos, videowalls de visualização direta, dispositivos vestíveis, arquitetura de display ISO/IEC 61966, IEC 62341, ISO 9241, ISO/IEC 29170 e IEC 62832.

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