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Publicações recentes – Patentes em displays micro-LED

Displays de micro-LED

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Os displays Micro-LED são telas planas emissivas. tecnologias construído a partir de nitreto de gálio inorgânico LIDERADO chips with individual pixel dimensions typically below 100 micrometres, delivering luminance levels, contrast ratios, and operational lifespans that neither OLED nor LCD architectures can match at equivalent pixel densities. The fundamental fabricação problem — transferring billions of defect-free microscale die from epitaxial wafers onto active-matrix backplanes at production-viable speed and yield — remains the central bottleneck separating laboratory demonstrations from mass-market panels, driving intense patente Atividades relacionadas a métodos de transferência de massa, remoção a laser, auto-montagem e estratégias de reparo baseadas em redundância.

Micro-led displays
A tecnologia micro-LED enfrenta desafios de fabricação para ampliar a produção sem defeitos de displays para o mercado de massa.

Em relação aos materiais, a eficiência diminui em dimensões de chip pequenas, conversão de cores via ponto quântico Filtros e a integração monolítica de emissores vermelhos, verdes e azuis em um único substrato de GaN são frentes de pesquisa ativas.

As aplicações subsequentes abrangem microdisplays acoplados a guias de onda para realidade aumentada/realidade virtual, HUDs automotivos de alto brilho, videowalls de visualização direta de grande formato e vestível Dispositivos em que o consumo de energia e o formato tornam a eficiência emissiva imprescindível.

As publicações e patentes indexadas abaixo abrangem toda essa cadeia — desde o crescimento epitaxial e a separação de chips até a integração do backplane, circuitos de acionamento, gerenciamento de cores e arquitetura de tela em nível de sistema.

Esta é a nossa mais recente seleção de publicações e patentes mundiais em inglês sobre displays Micro-LED, provenientes de diversos periódicos científicos online, classificadas e focadas em Micro-LED, μLED, epitaxia de LED, transferência em massa de micro-LED, micro-LED pick-and-place, backplane de micro-LED, backplane TFT de micro-LED, colagem de wafers de micro-LED, singulação de chips de LED, espaçamento de pixels de micro-LED, micro-LED monolítico, matriz de micro-LED, micro-LED de GaN e micro-LED.

Publication: no recent news on this particular topic. Please try the extensive manual search in the Publication Database linked just above.

Micro-led with improved light extraction efficiency

Patent published on the 2026-06-11 in US under Ref US20260164855 by META PLATFORMS TECH LLC [US] (Mezouari Samir [gb], Breakspear Robert Leslie [gb])

Abstract: [0000] A micro-LED includes a mesa structure and a tapered dielectric waveguide. The mesa structure includes a quantum well region disposed between an n-doped semiconductor layer and a p-doped semiconductor region. The n-doped semiconductor layer forms a tapered semiconductor pre-waveguide. The tapered dielectric waveguide has a lower refractive index than a higher refractive index of the tapered semiconductor pre-waveguide.[...]


Our summary: The micro-LED features a mesa structure with a quantum well region. It includes a tapered semiconductor pre-waveguide and a tapered dielectric waveguide. The dielectric waveguide has a lower refractive index compared to the semiconductor pre-waveguide.

micro-LED, light extraction, mesa structure, dielectric waveguide

Patent

Mechanisms for fabricating micro-leds

Patent published on the 2026-06-04 in US under Ref US20260156990 by SAPHLUX LLC [US] (Chen Chen [us], Song Jie [us])

Abstract: [0000] In some embodiments, methods for fabricating micro-LEDs may include bonding a semiconductor wafer to a Complementary Metal-Oxide-Semiconductor (CMOS) wafer via one or more adhesive layers, etching the LED epilayer and the one or more adhesive layers to form a plurality of micro-LED structures, and fabricating an electrode layer on the plurality of microLED structures. The semiconductor wafer may include an LED epilayer that may include an n-GaN layer, a p-GaN layer, and an active layer po[...]


Our summary: Methods for fabricating micro-LEDs involve bonding a semiconductor wafer to a CMOS wafer with adhesive layers. The process includes etching to form micro-LED structures and fabricating an electrode layer. A stress release pattern with geometrical shapes aids in managing mechanical stresses during fabrication.

micro-LEDs, semiconductor wafer, CMOS, fabrication

Patent

Partially stacking polychrome micro-led pixel

Patent published on the 2026-05-21 in WO under Ref WO2026102949 by JADE BIRD DISPLAY SHANGHAI LTD [CN] (Xu Qunchao [cn], Wei-sin Tan [cn])

Abstract: A polychrome Micro-LED pixel is provided. The pixel comprises: a first metal pillar formed on a substrate; a first LED structure that emits a first color, wherein the first LED structure is positioned on the first metal pillar; a second LED structure that emits a second color; a third LED structure that emits a third color, wherein the third LED structure is formed on the substrate, and the second LED structure is positioned above the third LED structure; a first conductive structure and a secon[...]


Our summary: The content describes a polychrome Micro-LED pixel with multiple color-emitting LED structures. It features a first metal pillar on a substrate supporting the first LED structure. Additionally, it includes conductive structures surrounding the LED components for electrical connectivity.

Micro-LED, Polychrome, Pixel Structure, Conductive Design

Patent

Polychrome micro-led pixel with non-coaxial stacking led structure

Patent published on the 2026-05-21 in WO under Ref WO2026103078 by JADE BIRD DISPLAY SHANGHAI LTD [CN] (Xu Qunchao [cn], Tan Wei-sin [cn])

Abstract: A polychrome Micro-LED pixel, comprising: a first LED structure that emits a first color, wherein the first LED structure is formed on a substrate; a first metal pillar formed on the substrate; a second LED structure that emits a second color, wherein the second LED structure is positioned on the first metal pillar; a first air gap around the first LED structure; a second air gap around the second LED structure; and a conductive structure surrounding the first LED structure and the second LED st[...]


Our summary: The content describes a polychrome Micro-LED pixel with a unique stacking design. It includes multiple LED structures emitting different colors, positioned on a substrate. The design features air gaps and a conductive structure for enhanced performance.

Micro-LED, pixel structure, non-coaxial stacking, conductive structure

Patent

Low power micro-led driver for high bandwidth short distance communication

Patent published on the 2026-05-07 in US under Ref US20260128800 by HYPERLUME INC [CA] (Nabavi Morteza [ca], Fariborzi Hossein [us], Nabavi Abdolreza [ca], Asad Mohsen [ca])

Abstract: [0000] A driver circuit for supplying and regulating power to a micro light-emitting diode (micro-LED), the driver circuitry comprising: at least one inverter; a first capacitance; a resistor coupled to ground; a fast switch comprising at least one first transistor; and a slow switch comprising at least one second transistor; whereby at least one of a rising time, a peaking effect, and LED power is increased.[...]


Our summary: This document describes a driver circuit designed for micro-LEDs. It includes components such as inverters, capacitors, and transistors. The circuit aims to enhance performance parameters like rising time and LED power.

micro-LED, driver circuit, low power, high bandwidth

Patent

Tópicos abordados: Micro-LED, displays emissivos, nitreto de gálio, dimensões de pixels, níveis de luminância, taxas de contraste, vida útil operacional, métodos de transferência de massa, remoção a laser, automontagem, queda de eficiência, filtros de pontos quânticos, integração monolítica, AR/VR, HUDs automotivos, videowalls de visualização direta, dispositivos vestíveis, arquitetura de display ISO/IEC 61966, IEC 62341, ISO 9241, ISO/IEC 29170 e IEC 62832.

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