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最新の出版物:フォトニックコンピューティングに関する特許

Photonic Computing

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Photonic computing
フォトニックコンピューティングは光ベースの技術を利用する テクノロジー 効率的かつ高速なデータ処理を実現するため。

フォトニックコンピューティングは、光ベースのコンポーネントを利用して、高速かつ低エネルギー消費で計算を実行します。シリコンフォトニクスは、光変調器、検出器、および導波路を単一チップ上に集積することを可能にします。光インターコネクトは、データ転送における遅延と帯域幅のボトルネックを低減します。非線形光学とフォトニック結晶導波路は、全光スイッチングと 信号処理フォトニックニューラルネットワークとテンソルコアは、機械学習のワークロードを高速化する。 量子ドット レーザーおよび集積型レーザー光源は、演算処理に必要なコヒーレント光を提供する。光論理ゲートおよび共振器は、基本的な処理ユニットを実装する。波長分割多重化は、データチャネルにおける並列性を向上させる。フォトニックデバイス製造技術の進歩は、将来のコンピューティングシステムに向けたスケーラブルなアーキテクチャを支える。

これは、フォトニックコンピューティングに関する英語の世界中の出版物と特許の最新のセレクションです。多数の科学オンラインジャーナルの中から、フォトニックコンピューティング、フォトニック集積回路、光インターコネクト、シリコンフォトニクス、光変調器、フォトニックニューラルネットワーク、量子ドットレーザー、非線形光学、フォトニック結晶導波路、光信号処理、波長分割多重、光論理ゲート、プラズモニックデバイス、光検出器、光増幅器、コヒーレント光コンピューティング、全光スイッチング、フォトニックメモリ、光共振器、周波数コム、光周波数変換、フォトニックテンソルコア、光コンピューティングアーキテクチャ、フォトニック量子コンピューティング、集積レーザー光源、光位相シフター、フォトニックアナログコンピューティング、光データストレージ、フォトニック信号ルーティング、超高速光学、フォトニックデバイス製造、フォトニックコンピューティングに分類され、焦点を絞っています。

Laser device

Patent published on the 2026-05-21 in WO under Ref WO2026105239 by NTT INC [JP] (Ishibashi Shigeo [jp])

Abstract: An exemplary laser device according to the present disclosure comprises: a resonator that outputs pulsed laser light; and a movement mechanism. The resonator comprises a nonlinear optical medium and a gain medium disposed in an optical path between a first mirror and a second mirror. The nonlinear optical medium has a periodic polarization inversion structure for mode-locked oscillation of the resonator. The periodic polarization inversion structure is a fan-out structure in which inversion regi[...]


Our summary: The laser device features a resonator that generates pulsed laser light. It includes a nonlinear optical medium with a periodic polarization inversion structure for mode-locked oscillation. Additionally, a movement mechanism adjusts the position of the nonlinear optical medium relative to the optical path.

laser device, resonator, nonlinear optical medium, mode-locked oscillation

Patent

Quantum control interface for external compute resources

Patent published on the 2026-05-21 in WO under Ref WO2026104914 by Q M TECH LTD [IL] (Wertheim Oded [il], Cohen Yonatan [il], Ziv Avishai [il], Weber Ori [il], Szmuk Ramon [il], Schlipf Lukas [il], Bismut Assaf [il], Sivan Itamar [il])

Abstract: This disclosure provides a quantum control system designed to enable low-latency, high-performance communication between quantum processors and classical computing resources. The system integrates optical interconnects, high-speed PCIe-based interfaces and flexible data packet structures to support Quantum Error Correction (QEC), gate calibration, and real-time optimization. The architecture allows independent scaling of quantum and classical resources, promoting adaptability and high-throughput[...]


Our summary: This disclosure presents a quantum control system for efficient communication between quantum processors and classical resources. It utilizes optical interconnects and PCIe interfaces to enhance performance and support Quantum Error Correction. The architecture enables independent scaling of resources, ensuring adaptability and high throughput.

Quantum control, low-latency communication, optical interconnects, Quantum Error Correction

Patent

Two-color monolithic infrared nbn photodetector array with high-density vertically integrated photodiode (hdvip) architecture

Patent published on the 2026-05-21 in US under Ref US20260143831 by VELICU SILVIU [US] (Grein Christoph H [us], Velicu Silviu [us])

Abstract: [0000] A molecular beam epitaxy (MBE)-grown two-color infrared nBn photodetector array integrated within a High-Density Vertically Integrated Photodiode (HDVIP) architecture. The innovative photodetector offers simultaneous detection of two distinct infrared spectral bands with enhanced sensitivity, reduced dark current, and fast response times. This innovative photodetector finds applications in various fields, including thermal imaging, security systems, environmental monitoring, and aerospace[...]


Our summary: A two-color infrared nBn photodetector array is developed using molecular beam epitaxy. It features high-density vertically integrated photodiode architecture for enhanced sensitivity and fast response. Applications include thermal imaging, security systems, and aerospace technology.

infrared photodetector, nBn architecture, molecular beam epitaxy, high-density integration

Patent

Photonic integrated circuit and method of manufacturing the photonic integrated circuit

Patent published on the 2026-05-21 in US under Ref US20260140305 by SAMSUNG ELECTRONICS CO LTD [KR] (Kim Sunil [kr], Lee Minkyung [kr], Hwang Inoh [kr])

Abstract: [0000] A photonic integrated circuit includes a substrate, an insulating layer on the substrate, an optical device layer on the insulating layer, the optical device layer including an optical coupler, and a reflective layer between the optical coupler and the insulating layer, where the optical device layer further includes hydrogen-containing amorphous silicon.[...]


Our summary: The photonic integrated circuit consists of a substrate, an insulating layer, and an optical device layer. The optical device layer contains an optical coupler and a reflective layer. Hydrogen-containing amorphous silicon is included in the optical device layer.

photonic integrated circuit, optical device layer, manufacturing method, hydrogen-containing silicon

Patent

Optical semiconductor device

Patent published on the 2026-05-21 in US under Ref US20260140403 by MITSUBISHI ELECTRIC CORP [JP] (Kuramoto Kyosuke [jp], Ishimura Eitaro [jp])

Abstract: [0000] An optical semiconductor device includes: a substrate; an optical modulator including a semiconductor layer having a first conductivity type layer, an absorbing layer and a second conductivity type layer which are formed in this order on the substrate, a first electrode connected to the first conductivity type layer, and a second electrode connected to the second conductivity type layer; a first pad connected to the first electrode; and a second pad connected to the second electrode, wher[...]


Our summary: The optical semiconductor device consists of a substrate and an optical modulator with a semiconductor layer structured in layers. It features first and second electrodes connected to different conductivity type layers. The design includes terraces and pads for electrical connections, with specific layer removals for functionality.

Optical modulator, semiconductor layer, waveguide, electrodes

Patent

Electro-optic photonic memory device with an integrated ferroelectric field effect transistor

Patent published on the 2026-05-21 in US under Ref US20260143721 by NAT UNIV SINGAPORE [SG] (Xu Zefeng [sg], Chen Chun-kuei [sg], Thean Aaron Voon-yew [sg])

Abstract: [0000] This document describes an electro-optic photonic memory device comprising a micro-ring resonator, and at least one ferroelectric field effect transistor (FeFET) that is disposed along a partial circumference of a raised ring waveguide of the micro-ring resonator. The FeFET comprises a ferroelectric gate stack and a heterojunction channel layer.[...]


Our summary: The document details an electro-optic photonic memory device featuring a micro-ring resonator. It includes at least one ferroelectric field effect transistor (FeFET) positioned along the waveguide s circumference. The FeFET consists of a ferroelectric gate stack and a heterojunction channel layer.

electro-optic, photonic memory, ferroelectric transistor, micro-ring resonator

Patent

quantum dot lasers and the end of the optical isolator

Published on 2026-05-08 by Shujie Pan, Junjie Yang, Siming Chen @NATURE

Abstract: Light: Science & Applications, Published online: 08 May 2026; doi:10.1038/s41377-026-02290-wQuantum dot (QD) lasers enable intrinsically feedback-tolerant, isolator-free silicon photonic integrated circuits (PICs), eliminating the bulky optical isolators traditionally required to suppress destabilizing reflections. Owing to their delta-function-like density of states, near-zero linewidth enhancement factor, and strong damping, QD lasers sustain stable, high-speed operation without coherence [...]


Our summary: Quantum dot lasers eliminate the need for optical isolators in silicon photonic integrated circuits. They provide stable, high-speed operation under extreme optical feedback. This technology facilitates compact and scalable optical interconnects for industrial applications.

quantum dot lasers, optical isolators, silicon photonics, integrated circuits

Publication

laser nanoprinting for nanophotonic breakthroughs

Published on 2026-04-13 by Frank Yao @NATURE npj

Abstract: npj Nanophotonics, Published online: 13 April 2026; doi:10.1038/s44310-026-00113-9Photonic integrated circuits (PICs) are central to scalable nanophotonics and are widely regarded as the most viable platform for large-scale quantum photonic systems. However, as quantum PICs increase in complexity, fabrication variability, optical loss accumulation, planar integration constraints and heterogeneous material stacking have emerged as primary bottlenecks, shifting the challenge from device physics to[...]


Our summary: Laser nanoprinting addresses challenges in the fabrication of complex quantum photonic integrated circuits. Femtosecond laser direct writing enables three-dimensional photonic interconnects and localized refractive index control. This technique may enhance yield and scalability for room-temperature deployable quantum photonic systems.

laser nanoprinting, nanophotonic circuits, quantum photonics, manufacturability

Publication

取り上げるトピック: フォトニックコンピューティング、光ベース技術、高速データ処理、シリコンフォトニクス、光変調器、光インターコネクト、非線形光学、フォトニック結晶導波路、フォトニックニューラルネットワーク、量子ドットレーザー、光論理ゲート、波長分割多重、フォトニックデバイス製造、信号処理、機械学習ワークロード、コヒーレント光、スケーラブルアーキテクチャ、集積レーザー光源、ISO/IEC 30130、IEC 62341、IEEE 8023、ISO/IEC 33063、およびITU-T G6941。

歴史的背景

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