
تستفيد الحوسبة الضوئية من المكونات القائمة على الضوء لإجراء الحوسبة بسرعة عالية واستهلاك منخفض للطاقة. تتيح الضوئيات السيليكونية دمج المُعدِّلات الضوئية والكاشفات والموجهات الموجية الضوئية على شريحة واحدة. تقلل الوصلات البينية الضوئية من زمن الاستجابة واختناقات عرض النطاق الترددي في نقل البيانات. تسهّل البصريات غير الخطية والموجهات الموجية البلورية الضوئية التبديل البصري بالكامل و معالجة الإشارات. تعمل الشبكات العصبية الضوئية ونوى الموتر على تسريع أعباء عمل التعلم الآلي. النقطة الكمية توفر أشعة الليزر ومصادر الليزر المتكاملة ضوءًا متماسكًا للحوسبة. تقوم البوابات المنطقية الضوئية والمرنانات بتنفيذ وحدات المعالجة الأساسية. يعمل تعدد تقسيم الطول الموجي على تعزيز التوازي في قنوات البيانات. تدعم التطورات في تصنيع الأجهزة الضوئية البنى القابلة للتطوير لأنظمة الحوسبة المستقبلية.
هذه هي أحدث مجموعة مختارة من المنشورات وبراءات الاختراع العالمية باللغة الإنجليزية حول الحوسبة الضوئية، بين العديد من المجلات العلمية على الإنترنت، مصنفة ومركزة على الحوسبة الضوئية، والدوائر الضوئية المتكاملة، والوصلات البينية الضوئية، والسيليكون الضوئي، والمعدّل الضوئي، والشبكة العصبية الضوئية، والليزر النقطي الكمي، والبصريات اللاخطية، والدليل الموجي البلوري الضوئي، ومعالجة الإشارات الضوئية، وتعدد تقسيم الطول الموجي، والبوابة المنطقية الضوئية, جهاز بلازموني، وكاشف ضوئي، ومضخم ضوئي، ومضخم ضوئي، وحوسبة بصرية متماسكة، والتبديل البصري الشامل، وذاكرة ضوئية، ومرنان ضوئي، ومشط ترددي، وتحويل التردد البصري، ونواة الموتر الضوئي، وبنية الحوسبة الضوئية، والحوسبة الضوئية الكمية، ومصدر ليزر متكامل، ومبدل الطور الضوئي، والحوسبة التناظرية الضوئية، وتخزين البيانات الضوئية، وتوجيه الإشارات الضوئية، والبصريات فائقة السرعة، وتصنيع الأجهزة الضوئية، والحوسبة الضوئية.
Laser device
Patent published on the 2026-05-21 in WO under Ref WO2026105239 by NTT INC [JP] (Ishibashi Shigeo [jp])
Abstract: An exemplary laser device according to the present disclosure comprises: a resonator that outputs pulsed laser light; and a movement mechanism. The resonator comprises a nonlinear optical medium and a gain medium disposed in an optical path between a first mirror and a second mirror. The nonlinear optical medium has a periodic polarization inversion structure for mode-locked oscillation of the resonator. The periodic polarization inversion structure is a fan-out structure in which inversion regi[...]
Our summary: The laser device features a resonator that generates pulsed laser light. It includes a nonlinear optical medium with a periodic polarization inversion structure for mode-locked oscillation. Additionally, a movement mechanism adjusts the position of the nonlinear optical medium relative to the optical path.
laser device, resonator, nonlinear optical medium, mode-locked oscillation
Patent
Quantum control interface for external compute resources
Patent published on the 2026-05-21 in WO under Ref WO2026104914 by Q M TECH LTD [IL] (Wertheim Oded [il], Cohen Yonatan [il], Ziv Avishai [il], Weber Ori [il], Szmuk Ramon [il], Schlipf Lukas [il], Bismut Assaf [il], Sivan Itamar [il])
Abstract: This disclosure provides a quantum control system designed to enable low-latency, high-performance communication between quantum processors and classical computing resources. The system integrates optical interconnects, high-speed PCIe-based interfaces and flexible data packet structures to support Quantum Error Correction (QEC), gate calibration, and real-time optimization. The architecture allows independent scaling of quantum and classical resources, promoting adaptability and high-throughput[...]
Our summary: This disclosure presents a quantum control system for efficient communication between quantum processors and classical resources. It utilizes optical interconnects and PCIe interfaces to enhance performance and support Quantum Error Correction. The architecture enables independent scaling of resources, ensuring adaptability and high throughput.
Quantum control, low-latency communication, optical interconnects, Quantum Error Correction
Patent
Two-color monolithic infrared nbn photodetector array with high-density vertically integrated photodiode (hdvip) architecture
Patent published on the 2026-05-21 in US under Ref US20260143831 by VELICU SILVIU [US] (Grein Christoph H [us], Velicu Silviu [us])
Abstract: [0000] A molecular beam epitaxy (MBE)-grown two-color infrared nBn photodetector array integrated within a High-Density Vertically Integrated Photodiode (HDVIP) architecture. The innovative photodetector offers simultaneous detection of two distinct infrared spectral bands with enhanced sensitivity, reduced dark current, and fast response times. This innovative photodetector finds applications in various fields, including thermal imaging, security systems, environmental monitoring, and aerospace[...]
Our summary: A two-color infrared nBn photodetector array is developed using molecular beam epitaxy. It features high-density vertically integrated photodiode architecture for enhanced sensitivity and fast response. Applications include thermal imaging, security systems, and aerospace technology.
infrared photodetector, nBn architecture, molecular beam epitaxy, high-density integration
Patent
Photonic integrated circuit and method of manufacturing the photonic integrated circuit
Patent published on the 2026-05-21 in US under Ref US20260140305 by SAMSUNG ELECTRONICS CO LTD [KR] (Kim Sunil [kr], Lee Minkyung [kr], Hwang Inoh [kr])
Abstract: [0000] A photonic integrated circuit includes a substrate, an insulating layer on the substrate, an optical device layer on the insulating layer, the optical device layer including an optical coupler, and a reflective layer between the optical coupler and the insulating layer, where the optical device layer further includes hydrogen-containing amorphous silicon.[...]
Our summary: The photonic integrated circuit consists of a substrate, an insulating layer, and an optical device layer. The optical device layer contains an optical coupler and a reflective layer. Hydrogen-containing amorphous silicon is included in the optical device layer.
photonic integrated circuit, optical device layer, manufacturing method, hydrogen-containing silicon
Patent
Optical semiconductor device
Patent published on the 2026-05-21 in US under Ref US20260140403 by MITSUBISHI ELECTRIC CORP [JP] (Kuramoto Kyosuke [jp], Ishimura Eitaro [jp])
Abstract: [0000] An optical semiconductor device includes: a substrate; an optical modulator including a semiconductor layer having a first conductivity type layer, an absorbing layer and a second conductivity type layer which are formed in this order on the substrate, a first electrode connected to the first conductivity type layer, and a second electrode connected to the second conductivity type layer; a first pad connected to the first electrode; and a second pad connected to the second electrode, wher[...]
Our summary: The optical semiconductor device consists of a substrate and an optical modulator with a semiconductor layer structured in layers. It features first and second electrodes connected to different conductivity type layers. The design includes terraces and pads for electrical connections, with specific layer removals for functionality.
Optical modulator, semiconductor layer, waveguide, electrodes
Patent
Electro-optic photonic memory device with an integrated ferroelectric field effect transistor
Patent published on the 2026-05-21 in US under Ref US20260143721 by NAT UNIV SINGAPORE [SG] (Xu Zefeng [sg], Chen Chun-kuei [sg], Thean Aaron Voon-yew [sg])
Abstract: [0000] This document describes an electro-optic photonic memory device comprising a micro-ring resonator, and at least one ferroelectric field effect transistor (FeFET) that is disposed along a partial circumference of a raised ring waveguide of the micro-ring resonator. The FeFET comprises a ferroelectric gate stack and a heterojunction channel layer.[...]
Our summary: The document details an electro-optic photonic memory device featuring a micro-ring resonator. It includes at least one ferroelectric field effect transistor (FeFET) positioned along the waveguide s circumference. The FeFET consists of a ferroelectric gate stack and a heterojunction channel layer.
electro-optic, photonic memory, ferroelectric transistor, micro-ring resonator
Patent
quantum dot lasers and the end of the optical isolator
Published on 2026-05-08 by Shujie Pan, Junjie Yang, Siming Chen @NATURE
Abstract: Light: Science & Applications, Published online: 08 May 2026; doi:10.1038/s41377-026-02290-wQuantum dot (QD) lasers enable intrinsically feedback-tolerant, isolator-free silicon photonic integrated circuits (PICs), eliminating the bulky optical isolators traditionally required to suppress destabilizing reflections. Owing to their delta-function-like density of states, near-zero linewidth enhancement factor, and strong damping, QD lasers sustain stable, high-speed operation without coherence [...]
Our summary: Quantum dot lasers eliminate the need for optical isolators in silicon photonic integrated circuits. They provide stable, high-speed operation under extreme optical feedback. This technology facilitates compact and scalable optical interconnects for industrial applications.
quantum dot lasers, optical isolators, silicon photonics, integrated circuits
Publication
laser nanoprinting for nanophotonic breakthroughs
Published on 2026-04-13 by Frank Yao @NATURE npj
Abstract: npj Nanophotonics, Published online: 13 April 2026; doi:10.1038/s44310-026-00113-9Photonic integrated circuits (PICs) are central to scalable nanophotonics and are widely regarded as the most viable platform for large-scale quantum photonic systems. However, as quantum PICs increase in complexity, fabrication variability, optical loss accumulation, planar integration constraints and heterogeneous material stacking have emerged as primary bottlenecks, shifting the challenge from device physics to[...]
Our summary: Laser nanoprinting addresses challenges in the fabrication of complex quantum photonic integrated circuits. Femtosecond laser direct writing enables three-dimensional photonic interconnects and localized refractive index control. This technique may enhance yield and scalability for room-temperature deployable quantum photonic systems.
laser nanoprinting, nanophotonic circuits, quantum photonics, manufacturability
Publication