
光子计算利用基于光的组件来执行高速、低能耗的计算。硅光子技术可在单个芯片上集成光调制器、探测器和波导。光互连减少了数据传输中的延迟和带宽瓶颈。非线性光学和光子晶体波导促进了全光开关和光通信技术的发展。 信号处理. .光子神经网络和张量内核可加速机器学习工作负载。. 量子点 激光器和集成激光源为计算提供相干光。光逻辑门和谐振器实现基本处理单元。波分复用技术增强了数据通道的并行性。光子设备制造技术的进步为未来计算系统的可扩展架构提供了支持。.
这是我们最新精选的有关光子计算的全球出版物和专利(英文),这些出版物和专利在众多科学在线期刊中进行了分类,主要涉及光子计算、光子集成电路、光互连、硅光子、光调制器、光子神经网络、量子点激光器、非线性光学、光子晶体波导、光信号处理、波分复用、光逻辑门、等离子器件、光探测器、光放大器、相干光计算、全光开关、光子存储器、光谐振器、频率梳、光频率转换、光子张量核心、光计算架构、光子量子计算、集成激光源、光移相器、光子模拟计算、光数据存储、光子信号路由、超快光学、光子器件制造和光子计算。.
Laser device
Patent published on the 2026-05-21 in WO under Ref WO2026105239 by NTT INC [JP] (Ishibashi Shigeo [jp])
Abstract: An exemplary laser device according to the present disclosure comprises: a resonator that outputs pulsed laser light; and a movement mechanism. The resonator comprises a nonlinear optical medium and a gain medium disposed in an optical path between a first mirror and a second mirror. The nonlinear optical medium has a periodic polarization inversion structure for mode-locked oscillation of the resonator. The periodic polarization inversion structure is a fan-out structure in which inversion regi[...]
Our summary: The laser device features a resonator that generates pulsed laser light. It includes a nonlinear optical medium with a periodic polarization inversion structure for mode-locked oscillation. Additionally, a movement mechanism adjusts the position of the nonlinear optical medium relative to the optical path.
laser device, resonator, nonlinear optical medium, mode-locked oscillation
Patent
Quantum control interface for external compute resources
Patent published on the 2026-05-21 in WO under Ref WO2026104914 by Q M TECH LTD [IL] (Wertheim Oded [il], Cohen Yonatan [il], Ziv Avishai [il], Weber Ori [il], Szmuk Ramon [il], Schlipf Lukas [il], Bismut Assaf [il], Sivan Itamar [il])
Abstract: This disclosure provides a quantum control system designed to enable low-latency, high-performance communication between quantum processors and classical computing resources. The system integrates optical interconnects, high-speed PCIe-based interfaces and flexible data packet structures to support Quantum Error Correction (QEC), gate calibration, and real-time optimization. The architecture allows independent scaling of quantum and classical resources, promoting adaptability and high-throughput[...]
Our summary: This disclosure presents a quantum control system for efficient communication between quantum processors and classical resources. It utilizes optical interconnects and PCIe interfaces to enhance performance and support Quantum Error Correction. The architecture enables independent scaling of resources, ensuring adaptability and high throughput.
Quantum control, low-latency communication, optical interconnects, Quantum Error Correction
Patent
Two-color monolithic infrared nbn photodetector array with high-density vertically integrated photodiode (hdvip) architecture
Patent published on the 2026-05-21 in US under Ref US20260143831 by VELICU SILVIU [US] (Grein Christoph H [us], Velicu Silviu [us])
Abstract: [0000] A molecular beam epitaxy (MBE)-grown two-color infrared nBn photodetector array integrated within a High-Density Vertically Integrated Photodiode (HDVIP) architecture. The innovative photodetector offers simultaneous detection of two distinct infrared spectral bands with enhanced sensitivity, reduced dark current, and fast response times. This innovative photodetector finds applications in various fields, including thermal imaging, security systems, environmental monitoring, and aerospace[...]
Our summary: A two-color infrared nBn photodetector array is developed using molecular beam epitaxy. It features high-density vertically integrated photodiode architecture for enhanced sensitivity and fast response. Applications include thermal imaging, security systems, and aerospace technology.
infrared photodetector, nBn architecture, molecular beam epitaxy, high-density integration
Patent
Photonic integrated circuit and method of manufacturing the photonic integrated circuit
Patent published on the 2026-05-21 in US under Ref US20260140305 by SAMSUNG ELECTRONICS CO LTD [KR] (Kim Sunil [kr], Lee Minkyung [kr], Hwang Inoh [kr])
Abstract: [0000] A photonic integrated circuit includes a substrate, an insulating layer on the substrate, an optical device layer on the insulating layer, the optical device layer including an optical coupler, and a reflective layer between the optical coupler and the insulating layer, where the optical device layer further includes hydrogen-containing amorphous silicon.[...]
Our summary: The photonic integrated circuit consists of a substrate, an insulating layer, and an optical device layer. The optical device layer contains an optical coupler and a reflective layer. Hydrogen-containing amorphous silicon is included in the optical device layer.
photonic integrated circuit, optical device layer, manufacturing method, hydrogen-containing silicon
Patent
Optical semiconductor device
Patent published on the 2026-05-21 in US under Ref US20260140403 by MITSUBISHI ELECTRIC CORP [JP] (Kuramoto Kyosuke [jp], Ishimura Eitaro [jp])
Abstract: [0000] An optical semiconductor device includes: a substrate; an optical modulator including a semiconductor layer having a first conductivity type layer, an absorbing layer and a second conductivity type layer which are formed in this order on the substrate, a first electrode connected to the first conductivity type layer, and a second electrode connected to the second conductivity type layer; a first pad connected to the first electrode; and a second pad connected to the second electrode, wher[...]
Our summary: The optical semiconductor device consists of a substrate and an optical modulator with a semiconductor layer structured in layers. It features first and second electrodes connected to different conductivity type layers. The design includes terraces and pads for electrical connections, with specific layer removals for functionality.
Optical modulator, semiconductor layer, waveguide, electrodes
Patent
Electro-optic photonic memory device with an integrated ferroelectric field effect transistor
Patent published on the 2026-05-21 in US under Ref US20260143721 by NAT UNIV SINGAPORE [SG] (Xu Zefeng [sg], Chen Chun-kuei [sg], Thean Aaron Voon-yew [sg])
Abstract: [0000] This document describes an electro-optic photonic memory device comprising a micro-ring resonator, and at least one ferroelectric field effect transistor (FeFET) that is disposed along a partial circumference of a raised ring waveguide of the micro-ring resonator. The FeFET comprises a ferroelectric gate stack and a heterojunction channel layer.[...]
Our summary: The document details an electro-optic photonic memory device featuring a micro-ring resonator. It includes at least one ferroelectric field effect transistor (FeFET) positioned along the waveguide s circumference. The FeFET consists of a ferroelectric gate stack and a heterojunction channel layer.
electro-optic, photonic memory, ferroelectric transistor, micro-ring resonator
Patent
quantum dot lasers and the end of the optical isolator
Published on 2026-05-08 by Shujie Pan, Junjie Yang, Siming Chen @NATURE
Abstract: Light: Science & Applications, Published online: 08 May 2026; doi:10.1038/s41377-026-02290-wQuantum dot (QD) lasers enable intrinsically feedback-tolerant, isolator-free silicon photonic integrated circuits (PICs), eliminating the bulky optical isolators traditionally required to suppress destabilizing reflections. Owing to their delta-function-like density of states, near-zero linewidth enhancement factor, and strong damping, QD lasers sustain stable, high-speed operation without coherence [...]
Our summary: Quantum dot lasers eliminate the need for optical isolators in silicon photonic integrated circuits. They provide stable, high-speed operation under extreme optical feedback. This technology facilitates compact and scalable optical interconnects for industrial applications.
quantum dot lasers, optical isolators, silicon photonics, integrated circuits
Publication
laser nanoprinting for nanophotonic breakthroughs
Published on 2026-04-13 by Frank Yao @NATURE npj
Abstract: npj Nanophotonics, Published online: 13 April 2026; doi:10.1038/s44310-026-00113-9Photonic integrated circuits (PICs) are central to scalable nanophotonics and are widely regarded as the most viable platform for large-scale quantum photonic systems. However, as quantum PICs increase in complexity, fabrication variability, optical loss accumulation, planar integration constraints and heterogeneous material stacking have emerged as primary bottlenecks, shifting the challenge from device physics to[...]
Our summary: Laser nanoprinting addresses challenges in the fabrication of complex quantum photonic integrated circuits. Femtosecond laser direct writing enables three-dimensional photonic interconnects and localized refractive index control. This technique may enhance yield and scalability for room-temperature deployable quantum photonic systems.
laser nanoprinting, nanophotonic circuits, quantum photonics, manufacturability
Publication