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单电子晶体管(SET)

1986
  • Dmitri Averin
  • Konstantin Likharev
Single-Electron Transistor device with quantum dot and tunnel junctions in electronics research.

(图片仅供参考)

A Single-Electron 晶体管 (SET) is a switching device that uses controlled electron tunneling to manipulate the flow of single electrons. It consists of a quantum dot (the ‘island’) coupled to source and drain leads via tunnel junctions, and capacitively coupled to a gate electrode. Its operation relies on the 库仑 blockade effect, enabling extreme sensitivity and low power consumption.

The Single-Electron 晶体管 (SET) operates based on a quantum mechanical effect called the Coulomb blockade. This effect occurs in a very small conductive island (a quantum dot) connected to source and drain electrodes through two tunnel junctions. For an electron to tunnel onto the island, it must overcome the electrostatic repulsion from the electrons already present. This requires a charging energy, [latex]E_C = e^2 / (2C)[/latex], where [latex]e[/latex] is the elementary charge and [latex]C[/latex] is the total capacitance of the island. For the Coulomb blockade to be observable, this charging energy must be significantly larger than the thermal energy, [latex]k_B T[/latex], which necessitates 低温 温度和/或极小的岛电容(fF 或 aF)。

A gate electrode is capacitively coupled to the island. By applying a voltage [latex]V_g[/latex] to the gate, the electrostatic potential of the island can be precisely tuned. This gate voltage can be adjusted to overcome the Coulomb blockade, allowing a single electron to tunnel from the source onto the island, and then from the island to the drain. This process can be repeated one electron at a time. The current through the SET thus exhibits sharp peaks (Coulomb oscillations) as a function of the gate voltage, with each peak corresponding to the addition of one electron to the island. This makes the SET an extremely sensitive electrometer, capable of detecting fractions of an elementary charge.

虽然单电子晶体管(SET)拥有无与伦比的灵敏度和实现超低功耗逻辑的潜力,但它们在大规模电路中的实际应用却面临诸多挑战。对极低温度的要求是消费电子产品发展的主要障碍。此外,它们的性能对周围衬底中的随机背景电荷高度敏感,这些电荷可能会不可预测地改变栅极电压特性。高产量地制造大量相同的单电子晶体管阵列也极其困难。尽管存在这些障碍,它们仍然是基础物理研究的重要工具,并且正在积极探索其在量子信息处理等细分领域的应用,其中量子点的电荷状态可以代表一个量子比特。

UNESCO Nomenclature: 2205
– Electronics

类型

Physical Device

中断

重大的

用法

Niche/Specialized

前体

  • 电子的发现
  • 量子隧穿的概念
  • 场效应晶体管(FET)的发明
  • 量子点的发展
  • theory of coulomb blockade

应用程序

  • 高灵敏度静电计
  • 单光子探测器
  • 量子计算(量子位)研究
  • 低温物理实验
  • 电流计量标准

专利:

NA

潜在创新理念

  • neuromorphic chips where SETs mimic synaptic ion channels
  • 用于深空探测器的超低功耗处理器
  • 片上量热计测量单个化学反应的能量
  • 对单光子敏感的量子天线
  • 用于随机计算的概率电子隧穿逻辑电路
  • 用于计量的自校准电荷传感器
  • 用于读取超导量子比特的低温放大器
  • 在单电子级工作的高频信号混频器
Related to: single-electron transistor, SET, coulomb blockade, 你给多少, tunnel junction, quantum computing, electrometer, nanoelectronics.

历史背景

单电子晶体管(SET)

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1993-01-01
1995

(如果日期未知或不相关,例如“流体力学”,则提供其显著出现的近似估计)

第十年 周年纪念日

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