液态金属脆化 (LME) 比腐蚀开裂更复杂,是一种现象,某些延展性金属在暴露于特定液态金属时会变脆,从而导致突然的灾难性故障。 压力. This occurs through the rapid penetration of the liquid metal along the grain boundaries of the solid metal, thereby weakening interatomic bonds and facilitating crack initiation and propagation. LME is highly dependent on the combination of the solid and liquid metals involved, as well as factors like temperature and applied stress. Common industrial examples include the embrittlement of steel by liquid zinc or aluminum during hot-dip galvanizing processes.
这是我们最新精选的有关液态金属脆化(LME)的全球出版物和专利,这些出版物和专利来自众多科学在线期刊,已分类并集中于液态金属脆化、金属脆化、液态金属、镓-铝、液态金属诱导脆化、诱导脆化、延展性损失、延性-脆化、晶界、汞脆化、镓脆化、铝-镓、液态镓和铝-镓。
Method for steel production and corresponding installation network
Patent published on the 2026-05-20 in UA under Ref UA130827 by VERESHCHAK VIKTOR IVANOVYCH [UA] (Vereshchak Viktor Ivanovych [ua], Ivashchenko Valerii Petrovych [ua], Petrenko Vitalii Oleksandrovych [ua], Chaika Oleksii Leonidovych [ua], Loboda Petro Ivanovych [ua], Hryshchenko Serhii Heorhiiovych [ua], Vereshchak Denys Viktorovych [ua])
Abstract: Invention relates to ferrous metallurgy, specifically to production of steel from iron ore using iron oxide reduction method via network of installations. Method is proposed for producing steel from iron ore raw materials by reducing iron oxide, in which furnace with shaft chamber for preliminary reduction (A), horizontal chamber for final reduction (B), and liquid metal accumulation chamber (C) are used, all connected by transition channels. Pellets made from raw materials that do not contain c[...]
Our summary: The invention describes a method for steel production using iron oxide reduction with a network of installations. It employs a furnace system with multiple chambers and utilizes low-temperature plasma for heating and reduction. The method aims to lower costs and reduce CO2 emissions while improving environmental conditions.
ferrous metallurgy, steel production, iron oxide reduction, plasma torches
Patent
Method of manufacturing circuit board
Patent published on the 2026-04-23 in US under Ref US20260113852 by ALPS ALPINE CO LTD [JP] (Kishida Katsuhiko [jp])
Abstract: A method of manufacturing a circuit board is disclosed. The method includes: a first step of forming a plurality of pixel circuits on a film with the pixels connected to each other by a wiring pattern; a second step of processing the film to thin the film at least at a position between pixels, and singulating the film into individual pixel units such that the film is cut together with the wiring pattern at the position between the pixels; a third step of transferring a plurality of singulated pi[...]
Our summary: A method for manufacturing a circuit board involves forming pixel circuits on a film. The film is processed to create individual pixel units and transferred onto a flexible substrate. Finally, a stretchable interconnect is formed using liquid metal between the wiring patterns.
circuit board manufacturing, pixel circuits, flexible substrate, liquid metal interconnect
Patent
Semiconductor apparatus and method for manufacturing semiconductor apparatus
Patent published on the 2026-04-16 in WO under Ref WO2026078991 by SONY SEMICONDUCTOR SOLUTIONS CORP [JP] (Furuya Hiroshi [jp])
Abstract: The present invention enables flip-chip mounting via a liquid metal while preventing liquid leakage of the liquid metal. This semiconductor apparatus comprises: a semiconductor chip on which a semiconductor device is formed; a protruding electrode electrically connected to the semiconductor device; a mounting substrate provided with an opening in which a liquid metal electrically connected to the protruding electrode is placed; and a metal oxide film on the surface of the liquid metal. The pro[...]
Our summary: The invention describes a semiconductor apparatus for flip-chip mounting using liquid metal. It prevents leakage of the liquid metal through a flexible metal oxide film. The apparatus includes a semiconductor chip, a protruding electrode, and a mounting substrate with an opening for the liquid metal.
semiconductor, flip-chip, liquid metal, metal oxide film
Patent
Multilayer ceramic capacitor and method of manufacturing the same
Patent published on the 2026-04-16 in US under Ref US20260106076 by SAMSUNG ELECTRO MECH [KR] (Jung Sun-min [kr], Lee Sangkyu [kr], Kim Hongseok [kr], Nam Chanhee [kr])
Abstract: [0000] A multilayer ceramic capacitor including a capacitor body including a dielectric layer and an internal electrode layer, and an external electrode disposed on an outer surface of the capacitor body, wherein the dielectric layer includes barium (Ba), titanium (Ti), and boron (B), the dielectric layer includes a plurality of dielectric grains and grain boundaries disposed between the plurality of dielectric grains, and an average thickness of the grain boundaries is about 1 nm to about 10 nm[...]
Our summary: A multilayer ceramic capacitor consists of a dielectric layer and internal electrode layer. The dielectric layer contains barium, titanium, and boron. Grain boundaries within the dielectric layer have an average thickness of 1 nm to 10 nm.
multilayer ceramic capacitor, dielectric layer, internal electrode, manufacturing method
Patent
Microelectronic humidity converter
Patent published on the 2026-04-15 in UA under Ref UA162699 by VINNYTSIA NATIONAL TECHNICAL UNIV [UA] (Osadchuk Oleksandr Volodymyrovych [ua], Osadchuk Yaroslav Oleksandrovych [ua], Krylyk Liudmyla Viktorivna [ua], Petrenko Vitalii Ivanovych [ua])
Abstract: Microelectronic humidity converter comprises a constant voltage source, a single-gate field-effect transistor, and two resistors. There are introduced therein a bipolar transistor, a dual-gate field-effect transistor, a humidity-sensitive resistor, two resistors, a blocking capacitor, and two capacitors. A first pole of the constant voltage source is connected to a first terminal of a first resistor, to a first terminal of the blocking capacitor, to a drain of the single-gate field-effect transi[...]
Our summary: The microelectronic humidity converter includes a constant voltage source, single-gate and dual-gate field-effect transistors, and a humidity-sensitive resistor. It utilizes multiple resistors and capacitors to establish connections among various components. The design integrates a bipolar transistor to enhance humidity sensing capabilities.
humidity converter, microelectronics, field-effect transistor, bipolar transistor
Patent
Metal-based composites and methods therefor
Patent published on the 2026-03-03 in US under Ref US12565455 by WISCONSIN ALUMNI RES FOUNDATION [US] (Chen Lianyi [us], Nabaa Ali [us])
Abstract: Aspects of the disclosure are directed to methods, apparatuses and articles of manufacture pertaining to metal-based materials having particles dispersed therein. As may be implemented in accordance with various embodiments, ceramic particles are provided in a metal-based melt. The metal-based melt is heated to induce boiling and therein diffuse metal vapors of the metal-based melt between the ceramic particles. A liquid metal coating is formed on the ceramic particles by condensing the metal va[...]
Our summary: This disclosure involves methods and apparatuses for creating metal-based composites with dispersed ceramic particles. A metal-based melt is heated to induce boiling, allowing metal vapors to diffuse between the ceramic particles. The condensation of these vapors forms a liquid metal coating on the ceramic surfaces and generates pressure to facilitate particle movement.
metal-based composites, ceramic particles, metal vapors, liquid metal coating
Patent
The Effect of Post-Heat Treatments on Microstructure and Mechanical Properties of a L-PBF CoCrNi–AlTi Medium-Entropy Alloy
Published on 2026-02-03 by Xiaojing Xiong, Xiaodong Nong, Libin Yu, Xianzhao Meng, Chunjia Mo, Yunjie Bi, Hui Ding @MDPI
Abstract: A CoCrNi-AlTi medium-entropy alloy was fabricated via laser powder bed fusion (L-PBF), and its microstructural evolution and mechanical response during aging at 500–900 °C for 1 h were systematically investigated. The as-built alloy exhibits a hierarchical microstructure consisting of elongated columnar grains and dislocation-rich cellular substructures, which is associated with an excellent strength–ductility combination (YS: 848 MPa, UTS: 1136 MPa, EF: 3[...]
Our summary: The study investigates the effects of post-heat treatments on the microstructure and mechanical properties of a CoCrNi-AlTi medium-entropy alloy fabricated via laser powder bed fusion. Aging at temperatures between 500-900 °C enhances hardness and tensile strength, with peak performance noted at 800 °C. The research highlights the role of L-PBF-induced defect structures in influencing precipitation behavior and the strength-ductility trade-off during heat treatment.
L-PBF, CoCrNi-AlTi, microstructure, mechanical properties
Publication
Influence of HFCVD Parameters on Diamond Coatings and Process Investigation of Sapphire Wafer Lapping
Published on 2026-02-03 by Wei Feng, Shuai Zhou, Xiaokang Sun @MDPI
Abstract: Aiming at the key problems of the material removal rate and surface integrity of existing tools in the lapping of sapphire hard and brittle crystals, an efficient lapping tool has been developed to explore a new process for HFVCD (hot filament chemical vapor deposition) diamond tools to efficiently lap sapphire wafers. With the premise of ensuring the surface roughness of the wafer is Ra ≤ 0.5 μm, the material removal rate is increased to more than 1 μm/h. To exp[...]
Our summary: The study investigates the influence of HFCVD parameters on diamond coatings for lapping sapphire wafers. An efficient lapping tool was developed to enhance material removal rates while maintaining surface integrity. Experimental results showed that specific coating morphologies significantly affected the lapping performance and surface quality of the sapphire wafers.
HFCVD, diamond coatings, sapphire wafers, material removal rate
Publication