Latest Publications & Patents on Semiconductors
This is our latest selection of worldwide publications and patents in english on Semiconductors, between many scientific online journals, classified and focused on semiconductor, diode, MOFSET, PN junction, N-type, P-type, BJT and JFET.
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A 4T1C Pixel Circuit with Threshold Voltage Compensation for Organic Light-Emitting Diode on Silicon Microdisplays
Published on 2025-02-20 by Jian Sun, Chen Li, Yuexin Cao, Liangde Lai, Weichen Song @MDPI
Abstract: In this paper, a pixel circuit consists of four MOSFETs and one capacitor is proposed for Organic Light-Emitting Diode on Silicon (OLEDoS) microdisplays. The proposed pixel circuit enhances luminance uniformity by compensating for the threshold voltage variation of the driving transistors by the capacitive coupling effect. Even with a threshold voltage variation of ±20 mV, the HSPICE simulation results reveal that the driving current offset stays between −0.89 and 0.[...]
Our summary: A pixel circuit with threshold voltage compensation is proposed for OLEDoS microdisplays, enhancing luminance uniformity. HSPICE simulation results show driving current offset stays small even with threshold voltage variation. Two-stage DAC driving scheme utilized for 256 gray levels, reducing accuracy requirements.
Threshold Voltage Compensation, Organic Light-Emitting Diode, Silicon Microdisplays, Pixel Circuit
Publication
How Does China Explore the Synergetic Development of Automotive Industry and Semiconductor Industry with the Opportunity for Industrial Transformation?
Published on 2025-02-19 by Wang Zhang, Fuquan Zhao, Zongwei Liu @MDPI
Abstract: Amidst the unfolding technological revolution and industrial transformation, the synergistic development between China’s automotive and semiconductor industries has emerged as a salient trend. To explore the potential difficulties and pathways of the synergistic development of the two industries, this study conducted cross-sectional surveys across three phases, specifically in March 2021, March 2022, and March 2024. The first phase of the survey identified that the two industries c[...]
Our summary: Amidst technological revolution, China explores synergistic development of automotive and semiconductor industries, conducting surveys in three phases to identify challenges, opportunities, and pathways for industrial transformation.
automotive industry, semiconductor industry, industrial transformation, synergistic development
Publication
Hydrogenated Amorphous Silicon Charge-Selective Contact Devices on a Polyimide Flexible Substrate for Dosimetry and Beam Flux Measurements
Published on 2025-02-19 by Mauro Menichelli, Saba Aziz, Aishah Bashiri, Marco Bizzarri, Clarissa Buti, Lucio Calcagnile, Daniela Calvo, Mirco Caprai, Domenico Caputo, Anna Paola Caricato, Roberto Catalano, Massimo Cazzanelli, Roberto Cirio, Giuseppe Antonio Pablo Cirrone, Federico Cittadini, Tommaso Croci, Giacomo Cuttone, Giampiero de Cesare, Paolo De Remigis, Sylvain Dunand, Michele Fabi, Luca Frontini, Catia Grimani, Mariacristina Guarrera, Hamza Hasnaoui, Maria Ionica, Keida Kanxheri, Matthew Large, Francesca Lenta, Valentino Liberali, Nicola Lovecchio, Maurizio Martino, Giuseppe Maruccio, Giovanni Mazza, Anna Grazia Monteduro, Arianna Morozzi, Augusto Nascetti, Stefania Pallotta, Andrea Papi, Daniele Passeri, Maddalena Pedio, Marco Petasecca, Giada Petringa, Francesca Peverini, Pisana Placidi, Matteo Polo, Alberto Quaranta, Gianluca Quarta, Silvia Rizzato, Federico Sabbatini, Leonello Servoli, Alberto Stabile, Cinzia Talamonti, Jonathan Emanuel Thomet, Luca Tosti, Monica Setia Vasquez Mora, Mattia Villani, Richard James Wheadon, @MDPI
Abstract: Hydrogenated amorphous silicon (a-Si:H) devices on flexible substrates are currently being studied for application in dosimetry and beam flux measurements. The necessity of in vivo dosimetry requires thin devices with maximal transparency and flexibility. For this reason, a thin (<10 µm) a-Si:H device deposited on a thin polyimide sheet is a very valid option for this application. Furthermore, a-Si:H is a material that has an intrinsically high radiation hardness. In ord[...]
Our summary: Hydrogenated amorphous silicon devices on flexible substrates for dosimetry and beam flux measurements. Thin a-Si:H device on polyimide sheet for in vivo dosimetry. Study of X-ray and proton response of charge-selective contact devices for dose measurements.
Amorphous Silicon, Charge-Selective Contact, Dosimetry, Beam Flux Measurements
Publication
Synthesis of Eco-Friendly Narrow-Band CuAlSe2/Ga2S3/ZnS Quantum Dots for Blue Quantum Dot Light-Emitting Diodes
Published on 2025-02-19 by Shenghua Yuan, Liyuan Liu, Xiaofei Dong, Xianggao Li, Shougen Yin, Jingling Li @MDPI
Abstract: Quantum dot light-emitting diodes (QLEDs) based on high-color-purity blue quantum dots (QDs) are crucial for the development of next-generation displays. I-III-VI type QDs have been recognized as eco-friendly luminescent materials for QLED applications due to their tunable band gap and high-stable properties. However, efficient blue-emitting I-III-VI QDs remain rare owing to the high densities of the intrinsic defects and the surface defects. Herein, narrow-band blue-emissive CuAlSe2/Ga2S3/ZnS Q[...]
Our summary: Synthesis of narrow-band CuAlSe2/Ga2S3/ZnS QDs for high-color-purity blue QLEDs, Facile strategy results in sharp blue emission peak at 450 nm, Double-shell structure enhances band-edge emission and improves quantum yield up to 69%, QLEDs exhibit electroluminescence peak at 453 nm with high efficiency.
Quantum Dots, Blue Quantum Dot Light-Emitting Diodes, CuAlSe2/Ga2S3/ZnS, Eco-Friendly
Publication
Magnetic Field Penetration Depth in Various Materials and Applications
Published on 2025-02-19 by Papa Pio Ascona García, Guido Elar Ordońez Carpio, Wilmer Moisés Zelada Zamora, Edwaldo Villanueva Pedraza, Roger Alvaro Fernandez Villarroel @MDPI
Abstract: The magnetic field penetration depth poses challenges in communications, geophysical exploration, biomedical therapies, and superconducting device design. The objective of this systematic review was to identify, analyze, and understand the depth of magnetic field penetration in conductors, semiconductors, superconductors, insulators and natural materials, modelling applications in medicine, engineering, and basic sciences. An exhaustive search was carried out in databases such as Scopus, IEEE Xp[...]
Our summary: This systematic review analyzes the magnetic field penetration depth in various materials and its applications in communications, geophysical exploration, biomedical therapies, and superconducting device design. The study identifies factors affecting penetration depth, such as material properties, frequency, and temperature, providing valuable insights for future research and technological advancements.
magnetic field, penetration depth, materials, applications
Publication
Circularly Polarized Reconfigurable MIMO Antenna for WLAN Applications
Published on 2025-02-19 by Tu Le-Tuan, Thai Dinh Nguyen, Nguyen Viet-Duc Tran, Hung Tran, Dat Nguyen-Tien @MDPI
Abstract: This paper presents a simple design of a two-element antenna with circularly polarized (CP) reconfigurability for multiple-input multiple-output wireless local-area network (WLAN) applications. A MIMO element consists of a reconfigurable feeding network, a CP source, and a 2 × 2 unit-cell metasurface (MS). By controlling the ON/OFF state of PIN diodes, the proposed MIMO system can operate in either right-hand CP (RHCP) or left-hand CP (LHCP) for all ports, or either RHCP or LHCP fo[...]
Our summary: This paper presents a simple design of a two-element antenna with circularly polarized reconfigurability for WLAN applications, utilizing a reconfigurable feeding network, a CP source, and a unit-cell metasurface. The antenna can operate in either RHCP or LHCP for all ports, or either RHCP or LHCP for each port, exhibiting good performance at 2.45 GHz.
Circularly Polarized, Reconfigurable, MIMO, WLAN
Publication
Placido disk lighting device and method for manufacturing the same
Patent published on the 2025-02-19 in EP under Ref EP4509035 by HUVITZ CO LTD [KR] (Park Sang Jeon [kr], Lim Jong Min [kr], Kim Nam Woon [kr])
Abstract: A Placido disk lighting device that can be easily manufactured by mounting a flexible light-emitting diode circuit board on which a plurality of light-emitting diodes (LEDs) is mounted on the inner surface of a hemispherical housing, and a method for manufacturing the same are disclosed. The Placido disk lighting device includes a hemispherical housing having a hemispherical shape; a light-emitting diode circuit board including a central circuit board (20a) mounted on an inner surface of the hem[...]
Our summary: Placido disk lighting device with LED circuit board in hemispherical housing, method for easy manufacturing, emits light in concentric rings.
LEDs, Placido disk, manufacturing method, flexible circuit board
Patent
Power overlay structure for a multi-chip semiconductor package
Patent published on the 2025-02-19 in EP under Ref EP4510185 by GEN ELECTRIC [US] (Stevanovic Ljubisa [us], Gowda Arun Virupaksha [us], Kapusta Christopher James [us], Tuominen Risto Ilkka Sakari [us])
Abstract: A multi-chip semiconductor package includes a dielectric interconnect layer having an upper surface and a bottom surface, at least one common source pad disposed on the upper surface of the interconnect layer, at least one common gate pad disposed on the upper surface of the interconnect layer, and a plurality of semiconductor devices each including a gate pad and at least one source pad adhered onto the interconnect layer, wherein the source pads of the plurality of semiconductor devices are el[...]
Our summary: Power overlay structure for multi-chip semiconductor package with dielectric interconnect layer, common source and gate pads, and parallel electrical connections between source and gate pads of semiconductor devices.
Power overlay structure, multi-chip semiconductor package, dielectric interconnect layer, semiconductor devices
Patent
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