
Dernières publications et brevets sur l'osmose
Cette semaine : nitrure de silicium, couche d'oxyde, dépôt de couche atomique assisté par plasma, conversion, entraînement thermique, dessalement de l'eau, osmose directe, solution de tirage, céramique
Chemical vapor deposition (CVD) is a materials-processing technique in which volatile precursor gases are delivered to a heated substrate where they chemically react or decompose to form a conformal solid film or revêtement. It enables high-purity, uniform, and compositionally controlled thin films (metals, oxides, nitrides, carbides and semiconductor compounds) used across product design, R&D and production for electronics, optics, protective coatings, MEMS and catalysts. By tuning parameters such as temperature, pressure, gas flow and precursor chemistry—and by choosing variants like LPCVD, PECVD or MOCVD—CVD can be optimized for film microstructure, performance, throughput and scalability from lab to volume manufacture.
Cette semaine : nitrure de silicium, couche d'oxyde, dépôt de couche atomique assisté par plasma, conversion, entraînement thermique, dessalement de l'eau, osmose directe, solution de tirage, céramique
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