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Últimas publicaciones y patentes sobre deposición química de vapor (CVD)

Deposición química de vapor

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Deposición química de vapor
Chemical vapor deposition creates high-quality thin films through vapor-phase reactions, with applications in advanced materials and semiconductor fabricación.

El depósito químico en fase vapor (CVD) es una película Técnica de fabricación que implica reacciones químicas de precursores en fase vapor sobre sustratos calentados para producir revestimientos conformados de gran pureza con un control preciso del grosor y la composición. Este campo integra las interacciones entre la química de los precursores, la dinámica del flujo de gases, las reacciones superficiales y la gestión térmica en entornos de reactores especializados. Las aplicaciones abarcan desde la fabricación de dispositivos semiconductores y revestimientos protectores hasta la síntesis de materiales avanzados. La siguiente recopilación presenta las últimas publicaciones y patentes revisadas por expertos, que reflejan los avances en el diseño de reactores, el desarrollo de precursores, la optimización de procesos y las nuevas modalidades de CVD, como la CVD mejorada por plasma y la CVD metalorgánica.

Esta es nuestra última selección de publicaciones y patentes mundiales en inglés sobre Deposición Química en Fase Vapor (CVD), entre muchas revistas científicas en línea, clasificadas y centradas en CVD, Deposición Química en Fase Vapor, deposición de películas finas, gas precursor, calentamiento del sustrato, velocidad de deposición, uniformidad de la película, dinámica del flujo de gas, reacciones superficiales, nucleación, mecanismo de crecimiento de la película, CVD térmico, CVD potenciado por plasma, CVD metalorgánico, deposición de capas atómicas, ALD, temperatura de deposición, gas portador, control del espesor de la película, conformalidad, presión de deposición, precursores químicos, morfología de la película, cinética de deposición, reacciones en fase gaseosa, difusión superficial, reactor de CVD y selectividad de la deposición.

Pecvd hbn film engineering for inter metal dielectric in 3d semiconductor devices

Patent published on the 2026-05-21 in WO under Ref WO2026106860 by APPLIED MATERIALS INC [US] (Cheng Baorui [us], Sharma Kashish [us], Mallick Abhijit Basu [us], Kedlaya Diwakar N [us])

Abstract: Embodiments described herein generally relate to semiconductor devices. More specifically, embodiments described herein relate to the production of films with high thermal conductivity and low dielectric constants for use in 3D semiconductor device packages. In at least one embodiment, a 3D integrated circuit is provided. The 3D integrated circuit includes at least one inter metal dielectric layer disposed between two metal interconnect layers. The inter metal dielectric layer includes a hexagon[...]


Our summary: The content discusses the engineering of hexagonal boron nitride films for inter metal dielectrics in 3D semiconductor devices. It highlights the films high thermal conductivity and low dielectric constants. The 3D integrated circuit features a dielectric layer between metal interconnects, enhancing performance.

PECVD, hexagonal boron nitride, 3D integrated circuits, inter metal dielectric

Patent

Sustainable 2-alkyltetrahydrofuran fuels for compression ignition engines

Patent published on the 2026-05-21 in US under Ref US20260139195 by US NAVY [US] (Davis Matthew C [us])

Abstract: The current invention describes a high-throughput catalytic process for the production of diesel fuel from domestic agricultural products, furfuraldehyde and plant fatty acids. In the present process, reacting medium and long chain fatty anhydrides (such as capric, caprylic, lauric and palmitic) with furfuraldehyde by a Perkin condensation produces 2-n-alkenylfurans. In a second step, the 2-n-alkenylfurans are hydrogenated to form 2-n-alkyltetrahydrofurans. Basic fuel property testing (melting p[...]


Our summary: The invention presents a method for producing sustainable 2-alkyltetrahydrofuran fuels from agricultural products. It involves a two-step process starting with the reaction of fatty anhydrides with furfuraldehyde to create 2-n-alkenylfurans, followed by hydrogenation. Testing shows that the resulting fuels possess favorable properties for use in diesel engines.

Sustainable fuels, catalytic process, diesel fuel, hydrogenation

Patent

In-situ detection system involving multi measurements coupling with nucleation reactor

Patent published on the 2026-05-21 in US under Ref US20260140033 by QUZHOU RESOURCE AND CHEMICAL INNOVATION RESEARCH INST [CN] (Liu Yanan [cn], Niu Songyu [cn], Li Jingyu [cn], Li Dianqing [cn], Lin Yanjun [cn], Han Jingbin [cn], Duan Xue [cn])

Abstract: [0000] An in-situ detection system involving multi measurements coupling with a nucleation reactor includes a crystal nucleus transient evolution imaging system and a time-resolved detection system which are in-situ connected with a rotating micro-liquid film reactor. A micro negative pressure sampler is made to capture nucleation particles in high-speed shear field and enter the visible observation area. The sampler is in-situ connected with a high-speed camera and microscope objective to obtai[...]


Our summary: The system integrates multi measurements with a nucleation reactor. It captures transient evolution of crystal nuclei using a micro negative pressure sampler. A time-resolved detection system enables microsecond full spectrum acquisition.

in-situ detection, nucleation reactor, transient evolution imaging, time-resolved detection

Patent

Method and structure for high precision silicon nitride photonics devices

Patent published on the 2026-05-21 in US under Ref US20260140315 by NEWPORT FAB LLC DBA TOWER SEMICONDUCTOR NEWPORT BEACH [US] (Preisler Edward [us], Mitsuhashi Riichiro [jp])

Abstract: [0000] In fabricating a semiconductor structure, a silicon nitride (SiN) layer is formed using atomic layer deposition (ALD). A SiN photonics device is formed from the SiN layer. The SiN photonics device is optically coupled to another device. A thickness of the SiN layer can be greater than or approximately equal to one hundred nanometers (100 nm). The SiN photonics device can be a multiplexer or a demultiplexer.[...]


Our summary: A silicon nitride layer is formed using atomic layer deposition to create photonics devices. These devices can be multiplexers or demultiplexers. The SiN layer thickness is typically around 100 nanometers or more.

silicon nitride, photonics devices, atomic layer deposition, optical coupling

Patent

Cosmetic preparation for rejuvenating the skin

Patent published on the 2026-05-20 in EP under Ref EP4744644 by PRIMA DERM S L [ES] (Segovia Laserna MarÍa Del Rosario [es], BermÚdez Herrojo Ignacio [es], JuliÀ MÖller Ricard [es])

Abstract: The present disclosure relates to a cosmetic composition for rejuvenating the skin comprising between 0,01% and 0,5% by weight with respect to the total weight of the composition of a precursor of retinoic acid selected from the group consisting of retinaldehyde, retinol, retinyl retinoate, retinyl esters and combinations thereof, between 0,0001% and 0,01% by weight with respect to the total weight of the composition of an anti-aging or antioxidant peptide, and between 0,0000005% and 0,000005% b[...]


Our summary: The cosmetic composition aims to rejuvenate the skin using a precursor of retinoic acid, an anti-aging peptide, and a growth factor. It includes specific weight percentages of these ingredients, with the retinoic acid precursor encapsulated in phospholipids. The method involves topical application of the composition for effective skin rejuvenation.

retinoic acid, anti-aging, encapsulation, cosmetic composition

Patent

Method for preparing 1-[5-(2-fluorophenyl)-1-{[3-(3-methoxypropoxy)phenyl]sulfonyl}-1h-pyrrol-3-yl]-n-methylmethylamine and hydrochloride thereof

Patent published on the 2026-05-14 in AU under Ref AU2024374671 by JIANGSU CAREPHAR PHARMACEUTICAL CO LTD (Qin Yinlin, Su Mei, Wang Zhiqiang)

Abstract: The present invention provides a method for preparing 1-[5-(2-fluorophenyl)-1-{[3-(3-methoxypropoxy)phenyl]sulfonyl}-1H-pyrrol-3-yl]-N-methylmethylamine and a hydrochloride thereof. In the preparation method, a treatment method after the preparation of 3-(3-methoxypropoxy)benzenesulfonyl chloride (H2) is optimized, and the purity of a sodium sulfonate salt formed after impurity removal is high. Furthermore, by means of a chlorination reaction, 3-(3-methoxypropoxy)benzenesulfonyl chloride (H2) ha[...]


Our summary: The invention describes a method for synthesizing 1-[5-(2-fluorophenyl)-1-{[3-(3-methoxypropoxy)phenyl]sulfonyl}-1H-pyrrol-3-yl]-N-methylmethylamine and its hydrochloride. The method optimizes the treatment of 3-(3-methoxypropoxy)benzenesulfonyl chloride to achieve high purity and stable quality. Additionally, it utilizes a catalyst and alkali to enhance the reaction conversion rate, resulting in a product with low impurities and high yield suitable for industrial applications.

synthesis, chlorination, purity, reaction conversion

Patent

Heralded linear optical generation of Dicke states

Published on 2026-04-30 by Minhyeok Kang, Jaehee Kim, William J Munro, Seungbeom Chin and Joonsuk Huh @IOP SCIENCE

Abstract: Entanglement is a fundamental feature of quantum mechanics and a key resource for quantum information processing. Among multipartite entangled states, Dicke states are distinguished by their permutation symmetry, which provides robustness against particle loss and enables applications for quantum communication and computation. Although Dicke states have been realized in various platforms, most optical implementations rely on postselection, which destroys the state upon detection and prevents its[...]


Our summary: This work presents a linear-optical heralded scheme for generating arbitrary Dicke states using photons. The approach leverages the permutation symmetry of Dicke states to simplify the generation process. This method offers a resource-efficient pathway for practical applications in quantum technologies.

Dicke states, quantum entanglement, linear optics, heralded generation

Publication

The Effect of Post-Heat Treatments on Microstructure and Mechanical Properties of a L-PBF CoCrNi&ndash;AlTi Medium-Entropy Alloy

Published on 2026-02-03 by Xiaojing Xiong, Xiaodong Nong, Libin Yu, Xianzhao Meng, Chunjia Mo, Yunjie Bi, Hui Ding @MDPI

Abstract: A CoCrNi-AlTi medium-entropy alloy was fabricated via laser powder bed fusion (L-PBF), and its microstructural evolution and mechanical response during aging at 500&amp;ndash;900 &amp;deg;C for 1 h were systematically investigated. The as-built alloy exhibits a hierarchical microstructure consisting of elongated columnar grains and dislocation-rich cellular substructures, which is associated with an excellent strength&amp;ndash;ductility combination (YS: 848 MPa, UTS: 1136 MPa, EF: 3[...]


Our summary: The study investigates the effects of post-heat treatments on the microstructure and mechanical properties of a CoCrNi-AlTi medium-entropy alloy fabricated via laser powder bed fusion. Aging at temperatures between 500-900 °C enhances hardness and tensile strength, with peak performance noted at 800 °C. The research highlights the role of L-PBF-induced defect structures in influencing precipitation behavior and the strength-ductility trade-off during heat treatment.

L-PBF, CoCrNi-AlTi, microstructure, mechanical properties

Publication

Temas tratados: Deposición química en fase vapor, fabricación de películas finas, reacciones en fase vapor, revestimientos de alta pureza, revestimientos conformados, química de precursores, dinámica de flujo de gases, reacciones superficiales, gestión térmica, fabricación de semiconductores, diseño de reactores, optimización de procesos, CVD mejorado por plasma, CVD metalorgánico, síntesis de materiales avanzados, publicaciones revisadas por pares, patentes ISO 14644, ASTM E2871, SEMI C3, IEC 61000 e ISO 9001....

Glosario de términos utilizados

Chemical Vapor Deposition (CVD): Proceso utilizado para producir películas delgadas o recubrimientos sobre sustratos mediante la reacción química de precursores gaseosos, lo que resulta en la deposición de material sólido. Se emplea comúnmente en la fabricación de semiconductores y la ciencia de los materiales.

Contexto histórico

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