Product Design, Manufacturing & Innovation Resources

Últimas publicaciones y patentes sobre electrónica

Electrónica

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Esta es nuestra última selección de publicaciones y patentes mundiales en inglés sobre Electrónica, entre muchas revistas científicas en línea, clasificadas y centradas en electrónica, resistencia, condensador, diodo, transistor, PCB y microcontrolador.

Wide dynamic range precision supply circuit

Patent published on the 2026-05-21 in WO under Ref WO2026107457 by OPTEON CORP [US] (Hopkins T [us], Schaeffer Timothy [us])

Abstract: A precision supply circuit capable of driving pulses of current, or DC current, through a load is described. The amount of current can be precisely controlled over a wide dynamic range. The circuit can be switched between and operated in current-control mode or voltage-control mode. The circuit can monitor recovery of compliance voltage, and amount of power dissipated in the load, and an amount of power dissipated in a power transistor to maintain safe operating levels.[...]


Our summary: The circuit can drive both pulses and DC current with precise control. It operates in either current-control or voltage-control mode. It monitors compliance voltage and power dissipation to ensure safe operation.

precision supply circuit, dynamic range, current control, voltage control

Patent

Strain gauge and strain sensor

Patent published on the 2026-05-21 in WO under Ref WO2026105742 by MINEBEA MITSUMI INC [JP] (Aizawa Yuta [jp], Asakawa Toshiaki [jp], Toda Shinya [jp])

Abstract: Provided is a strain gauge that has: a resin substrate, a first metal layer disposed on one side of the substrate, a first ceramic layer disposed on the side of the first metal layer opposite the substrate, and a resistor disposed on the side of the first ceramic layer opposite the substrate.[...]


Our summary: The strain gauge consists of a resin substrate with a first metal layer on one side. A first ceramic layer is positioned on the metal layer s opposite side. A resistor is located on the ceramic layer s side that faces away from the substrate.

strain gauge, strain sensor, resin substrate, ceramic layer

Patent

Discharging of a damping capacitor

Patent published on the 2026-05-21 in WO under Ref WO2026104097 by AMS OSRAM AG [AT] (Fiocchi Carlo [it], Schallmoser Oskar [de], Geiger Robert [de])

Abstract: The present disclosure relates to a circuit including: a supply terminal configured to receive a supply voltage; a driver circuit including an input terminal coupled with the supply terminal to receive the supply voltage as input voltage for powering an operation of the driver circuit; a damping capacitor coupled in parallel with the input terminal and ground such that the damping capacitor is charged by the supply voltage; wherein the driver circuit further comprises a discharge current generat[...]


Our summary: The circuit includes a supply terminal and a driver circuit powered by the supply voltage. A damping capacitor is charged in parallel with the input terminal and discharges when an overvoltage criterion is met. The discharge current generator controls the discharge current s behavior inversely to the input voltage.

damping capacitor, discharge current, overvoltage criterion, driver circuit

Patent

Accurate gas leak detection using tuneable diode lidar systems

Patent published on the 2026-05-21 in US under Ref US20260140258 by QLM TECH LTD [GB] (Ai Xiao [gb], Titchener James Graham [gb], Reed Murray Keith [gb])

Abstract: When using spectroscopic diode lidar to detect a gas of interest such as methane (CH4), detecting high concentration pathlength (CPL) values of the gas of interest may not actually indicate a plume or leak. In areas such as a refinery, where ambient gas levels may be routinely high, absorption from ambient gas measured over a long pathlength may produce the same CPL value as a much closer gas leak, leading to a false positive. By collecting and using lidar distance information in tandem with the[...]


Our summary: Tuneable diode lidar systems enhance gas leak detection accuracy. High concentration pathlength values can mislead detection in high ambient gas environments. Integrating lidar distance data with CPL values improves reliability and alarm triggering for gas leaks.

lidar, gas detection, methane, spectroscopic measurements

Patent

Front lock body structure having integrated antennas

Patent published on the 2026-05-21 in US under Ref US20260141762 by XTHINGS IND LLC [US] (Qian Lingling [us])

Abstract: [0000] The present invention relates to the technical field of smart locks, specifically disclosing a front lock body structure having integrated antennas, comprising an external panel on the front lock body; a PCB board mounted inside the front lock body adjacent to the panel, equipped with a Bluetooth antenna; a circular NFC antenna arranged on the panel; a UWB antenna positioned above the center of the NFC antenna s circular configuration. By rationally positioning the UWB, NFC, and Bluetooth[...]


Our summary: The invention describes a front lock body structure with integrated antennas. It includes a PCB board for Bluetooth, a circular NFC antenna, and a UWB antenna. The design optimizes space and minimizes interference among the antennas.

smart locks, integrated antennas, PCB board, UWB NFC Bluetooth

Patent

Electro-optic photonic memory device with an integrated ferroelectric field effect transistor

Patent published on the 2026-05-21 in US under Ref US20260143721 by NAT UNIV SINGAPORE [SG] (Xu Zefeng [sg], Chen Chun-kuei [sg], Thean Aaron Voon-yew [sg])

Abstract: [0000] This document describes an electro-optic photonic memory device comprising a micro-ring resonator, and at least one ferroelectric field effect transistor (FeFET) that is disposed along a partial circumference of a raised ring waveguide of the micro-ring resonator. The FeFET comprises a ferroelectric gate stack and a heterojunction channel layer.[...]


Our summary: The document details an electro-optic photonic memory device featuring a micro-ring resonator. It includes at least one ferroelectric field effect transistor (FeFET) positioned along the waveguide s circumference. The FeFET consists of a ferroelectric gate stack and a heterojunction channel layer.

electro-optic, photonic memory, ferroelectric transistor, micro-ring resonator

Patent

Intrinsic radial superconducting diode effect

Published on 2026-03-12 by Chuan-Shuai Huang, Weinan Lin and Xiancong Lu @IOP SCIENCE

Abstract: Using Ginzburg–Landau theory, we investigate the angular dependence of the intrinsic superconducting diode effect (SDE) in systems with mixed conventional Rashba and radial Rashba (RR) spin–orbit couplings (SOC), characterized by the so-called Rashba angle . Our results show that the admixture of the tangential and radial spin-textures introduces a pronounced phase shift in the dependence of diode efficiency η on magnetic field angle —a hallmark of the radial SDE arising from RR SOC. Impo[...]


Our summary: This study investigates the intrinsic superconducting diode effect using Ginzburg–Landau theory. It reveals a pronounced phase shift in diode efficiency due to mixed Rashba spin-orbit couplings. Higher-order magnetic field corrections show a distinct non-sinusoidal angular dependence, indicating the potential for optimizing diode devices.

superconducting diode, spin-orbit coupling, Ginzburg–Landau theory, angular dependence

Publication

Bulk photovoltaic effects of 2D Dirac systems in a temperature gradient

Published on 2026-02-26 by Yang Gao @IOP SCIENCE

Abstract: The bulk photovoltaic effect (BPVE) is the generation of a DC photocurrent in materials that typically requires broken inversion symmetry and plays a crucial role in nonlinear optics and optoelectronics. Here, we theoretically study the BPVE in inversion-symmetric two-dimensional Dirac systems under a temperature gradient, which breaks the inversion symmetry by creating a nonequilibrium steady state. We demonstrate a Drude-like resonant structure in the low-frequency region arising from the jerk[...]


Our summary: This study investigates the bulk photovoltaic effect in inversion-symmetric 2D Dirac systems under a temperature gradient. It reveals that the injection process dominates the BPVE conductivity and identifies resonant structures in the frequency response. The findings suggest new applications for materials with inversion symmetry in nonlinear optoelectronics.

Bulk photovoltaic effect, 2D Dirac systems, temperature gradient, nonlinear optoelectronics

Publication

Temas tratados: Heterounión ternaria, transistores sinápticos, puntos cuánticos de perovskita, computación neuromórfica, algoritmo de búsqueda de armonía, optimización volt-var, optimización metaheurística, microrred fotovoltaica, capa de recubrimiento metálica, Efecto de barrido del oxígeno, Semiconductores de tipo P de alta movilidad, Telurio, Efecto de diodo sintonizable, Unión de túnel superconductor, Accionamiento biarmónico, Diodo Josephson, Nanogenerador piezoeléctrico y Nanocompuesto de P(VDF-TrFE)..

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