هذه هي أحدث مجموعة مختارة من المنشورات وبراءات الاختراع العالمية باللغة الإنجليزية في مجال الإلكترونيات، بين العديد من المجلات العلمية على الإنترنت، مصنفة ومركزة على الإلكترونيات والمقاومات والمكثفات والصمامات الثنائية والترانزستور وثنائي الفينيل متعدد الكلور والمتحكم الدقيق.
Lateral power semiconductor device having a vertical channel and methods for making the same
Patent published on the 2026-06-11 in US under Ref US20260164726 by MICROCHIP TECH INCORPORATED [US] (Pandey Shesh Mani [us], Sharma Yogesh Kumar [us])
Abstract: A lateral junction field-effect transistor including a volume of semiconductor material including a first end, a second end spaced vertically from the first end, a first side, and a second side spaced laterally from the first side. A source and a drain are located at the first end of the volume of semiconductor material. Laterally spaced apart first and second gates are also located at the first end of the volume of semiconductor material. The source is positioned between the first and second ga[...]
Our summary: The document describes a lateral junction field-effect transistor with a vertical channel. It features a semiconductor material volume with defined ends and sides. The configuration includes a source and drain at one end, with gates positioned laterally.
lateral power semiconductor, vertical channel, junction field-effect transistor, semiconductor material
Patent
Low-dropout regulator detecting dropout
Patent published on the 2026-06-11 in US under Ref US20260161190 by SAMSUNG ELECTRONICS CO LTD [KR] (Kim Seki [kr], Nomiyama Takahiro [kr])
Abstract: A low-dropout (LDO) regulator includes a pass transistor having one terminal to which an input voltage is applied and another terminal through which an output voltage is output, and a dropout detection circuit configured to detect dropout. The dropout detection circuit may include a voltage copy circuit configured to generate a copy voltage by copying the output voltage, a first resistor electrically connected between the one terminal of the pass transistor and the voltage copy circuit, a curren[...]
Our summary: A low-dropout regulator features a pass transistor for input and output voltage management. It includes a dropout detection circuit with a voltage copy circuit to generate a copy voltage. The circuit also utilizes resistors and a bypass comparator for accurate dropout detection.
Low-dropout regulator, dropout detection circuit, voltage copy circuit, pass transistor
Patent
Power conversion device
Patent published on the 2026-06-11 in WO under Ref WO2026121774 by LG INNOTEK CO LTD [KR] (Kim Soo Hong [kr], Jung Kwang Soon [kr], Cho Byung Geuk [kr])
Abstract: A power conversion device according to an embodiment of the present invention comprises: an input unit for receiving input power; a power conversion unit for converting the input power; an output unit for outputting power to a battery; a diode connected between the power conversion unit and the output unit; and a control unit that uses the voltages of the front and rear ends of the diode to control an output current output to the output unit.[...]
Our summary: The power conversion device includes an input unit for receiving input power, a power conversion unit for converting that power, and an output unit for delivering power to a battery. A diode is connected between the power conversion unit and the output unit. The control unit regulates the output current based on the voltages across the diode.
Power conversion, input unit, output unit, control unit
Patent
Low frequency differential resonant capacitor
Patent published on the 2026-06-11 in US under Ref US20260163482 by EM MICROELECTRONIC MARIN SA [CH] (Tu Cao-thong [ch])
Abstract: A switched resonant capacitor including a first capacitor and a second capacitor connected in series by means of a first switching element between a first conductor and a second conductor; the switched resonant capacitor further including a second switching element connected in parallel to the first capacitor and a third switching element connected in parallel to the second capacitor.[...]
Our summary: The content describes a low frequency differential resonant capacitor with two capacitors in series. It includes a first switching element connecting the capacitors and two additional switching elements in parallel. This configuration allows for controlled switching in resonant circuits.
resonant capacitor, switching elements, low frequency, series-parallel configuration
Patent
Method for fabricating a hemt device in an atomic layer etching reactor and use of the method in fabrication of a gallium-nitride-based hemt
Patent published on the 2026-06-11 in WO under Ref WO2026119915 by ALIXLABS AB [SE] (Sundqvist Jonas [de], Suyatin Dmitry [se], Jafari Jam Reza [se], Karimi Amin [se])
Abstract: The present invention relates to a method for fabricating a high electron mobility transistor device in an atomic layer etching reactor. The method comprises: providing a wafer comprising a selectively masked gallium nitride layer; and subjecting the selectively masked gallium nitride layer for an etching process comprising alternating surface modification and removal steps. The surface modification steps are performed under reactive gas flow. The removal steps are performed using a low-energy p[...]
Our summary: The invention describes a method for fabricating a high electron mobility transistor using atomic layer etching. It involves selectively masking a gallium nitride layer and applying a cyclic etching process with alternating surface modification and removal steps. The process maintains continuous plasma and reactive gas flow to achieve self-limiting surface kinetics during etching.
atomic layer etching, high electron mobility transistor, gallium nitride, plasma etching
Patent
Compound for organic optoelectronic diodes, composition for organic optoelectronic diodes, organic optoelectronic diode, and display device
Patent published on the 2026-06-11 in WO under Ref WO2026121869 by SAMSUNG SDI CO LTD [KR] (Kim Wook [kr], Ko Jonghoon [kr], Kim Jonghoon [kr], Im Suheon [kr], Huh Dalho [kr], Lee Seungjae [kr], Kim Mingi [kr], Kim Hyung Sun [kr], Lee Hanill [kr], Yoon Jiah [kr], Lee Mijin [kr], Gwak Seonyeong [kr], Park Minji [kr])
Abstract: The present invention relates to: a compound for organic optoelectronic diodes, represented by chemical formula 1; and a composition for organic optoelectronic diodes, an organic optoelectronic diode, and a display device, comprising the compound. The details of chemical formula 1 is as defined in the specification.[...]
Our summary: The invention presents a compound for organic optoelectronic diodes. It includes a specific composition and an organic optoelectronic diode. Additionally, it encompasses a display device utilizing the compound.
organic optoelectronic diodes, compound, composition, display device
Patent
Intrinsic radial superconducting diode effect
Published on 2026-03-12 by Chuan-Shuai Huang, Weinan Lin and Xiancong Lu @IOP SCIENCE
Abstract: Using Ginzburg–Landau theory, we investigate the angular dependence of the intrinsic superconducting diode effect (SDE) in systems with mixed conventional Rashba and radial Rashba (RR) spin–orbit couplings (SOC), characterized by the so-called Rashba angle . Our results show that the admixture of the tangential and radial spin-textures introduces a pronounced phase shift in the dependence of diode efficiency η on magnetic field angle —a hallmark of the radial SDE arising from RR SOC. Impo[...]
Our summary: This study investigates the intrinsic superconducting diode effect using Ginzburg–Landau theory. It reveals a pronounced phase shift in diode efficiency due to mixed Rashba spin-orbit couplings. Higher-order magnetic field corrections show a distinct non-sinusoidal angular dependence, indicating the potential for optimizing diode devices.
superconducting diode, spin-orbit coupling, Ginzburg–Landau theory, angular dependence
Publication
A Novel 3D Probe for Near-Field Scanning Microwave Microscopy
Published on 2026-02-03 by Ali M. Almuhlafi, Omar M. Ramahi @MDPI
Abstract: Near-field scanning microwave microscopy (NSMM) offers the ability to probe local electromagnetic properties beyond the classical Abbe diffraction limit, but achieving high resolution over practical scan areas remains challenging. In this work, we introduce a novel three-dimensional (3D) NSMM probe consisting of a split-ring resonator (SRR) coupled to a microstrip line and loaded with vertically extended metallic bars. The 3D loading enhances electric-field localization in the sensing region by [...]
Our summary: A novel 3D NSMM probe is introduced, enhancing electric-field localization through a split-ring resonator and metallic bars. Full-wave simulations quantify the probe s field-spread function and its impact on imaging fidelity. The probe s performance is validated by imaging a dielectric slab, confirming its effectiveness as a spatial filter for improved resolution.
3D Probe, Near-Field Scanning, Microwave Microscopy, Split-Ring Resonator
Publication











