有关半导体的最新出版物和专利

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8 月 17, 2025

面向制造设计 (DfM), 电气工程, 能源, 锂, 材料科学, MOSFET, 光电, 工艺优化, 半导体

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这是我们在众多科学在线期刊中最新精选的有关半导体的全球出版物和专利，分类和重点关注半导体、二极管、MOFSET、PN 结、N 型、P 型、BJT 和 JFET。

Monolithically Integrated GaAs Nanoislands on CMOS-Compatible Si Nanotips Using GS-MBE

Published on 2025-07-12 by Adriana Rodrigues, Anagha Kamath, Hannah-Sophie Illner, Navid Kafi, Oliver Skibitzki, Martin Schmidbauer, Fariba Hatami @MDPI

Abstract: The monolithic integration of III-V semiconductors with silicon (Si) is a critical step toward advancing optoelectronic and photonic devices. In this work, we present GaAs nanoheteroepitaxy (NHE) on Si nanotips using gas-source molecular beam epitaxy (GS-MBE). We discuss the selective growth of fully relaxed GaAs nanoislands on complementary metal oxide semiconductor (CMOS)-compatible Si(001) nanotip wafers. Nanotip wafers were fabricated using a state-of-the-art 0.13 &mu;m SiGe Bipolar [...]

Our summary: Monolithic integration of GaAs nanoislands on Si nanotips using GS-MBE enables advancement of optoelectronic devices. Selective growth of fully relaxed GaAs islands on CMOS-compatible Si(001) nanotip wafers. Investigation focuses on growth conditions influence on morphology, crystalline structure, and defect formation.

GaAs, Nanoislands, GS-MBE, CMOS-compatible

Publication

Quantum microwave-to-optical transducer and associated methods

Patent published on the 2025-06-19 in WO under Ref WO2025128892 by GOVERNMENT OF THE US SECRETARY OF COMMERCE [US] (Silverman Kevin Lawrence [us], Decrescent Ryan Anthony [us], Mirin Richard Paul [us], Autry Travis [us], Wang Zixuan [us], Imany Poolad [us])

Abstract: A quantum transducer includes a back gate having a doped semiconductor layer, a tunnel barrier located above the doped semiconductor layer, a quantum dot contacting a top surface of the tunnel barrier, a cap layer located above the tunnel barrier and covering the quantum dot, a surface acoustic wave (SAW) resonator located above the cap layer, a SAW transducer coupled to the SAW resonator, and a top gate located above the SAW resonator. The SAW resonator is mechanically coupled to the quantum do[...]

Our summary: Quantum transducer with back gate, doped semiconductor layer, tunnel barrier, quantum dot, cap layer, SAW resonator, SAW transducer, top gate. Depth and conductivity of doped layer selected to minimize SAW attenuation and achieve high piezoelectric coupling constant.

Photovoltaic cells with bypass diodes

Patent published on the 2025-06-17 in US under Ref US12336305 by TANDEM PV [US] (Bailie Colin David [us], Eberspacher Chris [us])

Abstract: Embodiments of the disclosure include a photovoltaic device comprising a plurality of photovoltaic cells coupled in series. The photovoltaic cells comprising a first contact layer, a first charge transport layer (CTL) disposed over the first contact layer, an absorber layer disposed over the first CTL, a second CTL disposed over the absorber layer; and a second contact layer disposed over the second CTL. Each photovoltaic cell in the plurality of photovoltaic cells includes a diode region, the d[...]

Our summary: Photovoltaic device with bypass diodes, series-coupled photovoltaic cells, diode region with feature extending through layers.

Photovoltaic cells, bypass diodes, photovoltaic device, charge transport layer

Patent

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