본 자료는 MEMS 관련 전 세계 영문 논문 및 특허를 엄선하여 정리한 것으로, 다양한 온라인 과학 저널을 대상으로 분류 및 집중적으로 다루었습니다.
Electrical oscillator self-calibration using mechanical oscillator
Patent published on the 2026-10-15 in US under Ref US20260318708 by STMICROELECTRONICS INT N V [CH] (Quartiroli Matteo [it])
Abstract: A method for calibration of a microelectromechanical system (MEMS) device includes generating a first periodic signal with a mechanical frequency, generating a second periodic signal with an electrical frequency, generating a ratio signal indicating a relationship between the mechanical frequency and the electrical frequency, and generating an electrical oscillator calibration signal based on the ratio signal and a predetermined mechanical oscillator calibration signal. The MEMS device may inclu[...]
Our summary: The method involves generating periodic signals from mechanical and electrical oscillators. A ratio signal indicates the relationship between the two frequencies. An electrical calibration signal is produced for the MEMS device to enhance system clock accuracy.
self-calibration, electrical oscillator, mechanical oscillator, MEMS
Patent
Devices and systems for measuring seismic ground motion, and methods of manufacturing the devices
Patent published on the 2026-10-14 in EP under Ref EP4822404 by NANOMETRICS INC [CA] (Hayman Mark Jonathan Brice [ca], Bainbridge Geoffrey Stewart [ca], Li Yin [ca], Dovlo Edem [ca], Venables Ian [ca], Talbot Ian [ca])
Abstract: [0001] Devices and systems for measuring seismic ground motion, and methods for manufacturing the devices are provided. The device includes three seismic transducers (1a,1b,1c) configured for detecting the seismic ground motion and converting the seismic ground motion in three orthogonal seismic sensing directions to three seismic signals, the three seismic sensing directions comprising an instrument reference frame; and one or more gyrocompass sensors each comprising one or more micro-electrome[...]
Our summary: The document describes devices and systems for measuring seismic ground motion. It includes seismic transducers that detect motion in three orthogonal directions. Additionally, it features gyrocompass sensors with MEMS transducers for measuring Earth s rotation.
seismic sensors, ground motion measurement, MEMS transducers, gyrocompass technology
Patent
Packaging method for mems acoustic device structure, mems acoustic device packaging structure and mems chip packaging method for acoustic device
Patent published on the 2026-10-08 in US under Ref US20260307982 by HEFEI SMAT TECH CO LTD [CN] (Tan Xiaochun [cn])
Abstract: A MEMS acoustic device packaging method, a packaging structure of a MEMS acoustic device structure, and a MEMS chip packaging method for an acoustic device are disclosed. The MEMS acoustic device packaging method comprises: first device encapsulation: encapsulating a first device, plating a redistribution layer, plating a conductive block, and encapsulating and exposing a top surface of the conductive block to form a package body; second device interconnection: electrically connecting a second d[...]
Our summary: A MEMS acoustic device packaging method is disclosed involving encapsulation and interconnection of devices. The method allows for vertical stacking of devices to save space and improve integration. This results in a smaller size and enhanced structural stability for the acoustic device.
MEMS packaging, acoustic device, device encapsulation, vertical stacking
Patent
Micro-electro-mechanical system package and fabrication method thereof
Patent published on the 2026-10-01 in US under Ref US20260296879 by VANGUARD INT SEMICONDUCT CORP [TW] (Nagarajan Ranganathan [sg], Zhou Guofu [sg], Chan Buan Fei [sg])
Abstract: [0000] A MEMS package includes a first substrate, a stopper, a device layer, and a release opening. The first substrate includes a cavity therein. The stopper is disposed in the cavity and integrated with the first substrate. The device layer includes a MEMS device and is bonded to the first substrate. The release opening penetrates the device layer, corresponds to the stopper, and is disposed in the MEMS device.[...]
Our summary: A MEMS package consists of a first substrate with a cavity, a stopper integrated within it, and a device layer containing a MEMS device. The device layer is bonded to the first substrate. A release opening in the device layer corresponds to the stopper and is located within the MEMS device.
MEMS, packaging, fabrication, substrate
Patent
Microelectromechanical system with improved compensation of the radiometric effect
Patent published on the 2026-09-30 in EP under Ref EP4814496 by ST MICROELECTRONICS INT NV [CH] (Guerinoni Luca [it], Rizzini Francesco [it], Gattere Gabriele [it])
Abstract: MEMS system including: an acceleration transducer that generates an acceleration signal; a first and a second resonator (24,26), which are arranged stacked along a first direction (Z) and are arranged laterally with respect to the acceleration transducer, along a second direction (Y); and an electronic circuit. The first and second resonators (24,26) generate a first and a second oscillation signal, respectively, which are indicative of a first and a second resonance frequency (f1,f2), respectiv[...]
Our summary: The microelectromechanical system (MEMS) improves radiometric effect compensation. It includes an acceleration transducer and two stacked resonators that generate oscillation signals. An electronic circuit calculates uncompensated acceleration and compensates for temperature-induced offsets.
MEMS, radiometric compensation, acceleration transducer, resonance frequency
Patent
Ultrasonic transceiver with stacked die back cavity
Patent published on the 2026-09-10 in US under Ref US20260265045 by INVENSENSE INC [US] (Przybyla Richard [us], Eovino Benjamin Eric [us], Shelton Stefon Eric [us])
Abstract: An ultrasonic transceiver includes a microelectromechanical system (MEMS) substrate having a micromachined ultrasonic transducer (MUT) suspended over a front cavity that is exposed to an external environment through an acoustic port. A semiconductor substrate includes a MEMS cap that is physically secured relative to the MEMS substrate, overlies the MUT, and defines a back cavity on an opposite side of the MUT from the front cavity, the back cavity enclosing an air volume.[...]
Our summary: The ultrasonic transceiver features a MEMS substrate with a micromachined ultrasonic transducer suspended over a front cavity. A semiconductor substrate with a MEMS cap secures the structure and defines a back cavity. This design allows the transceiver to interact with the external environment effectively.
Ultrasonic transceiver, MEMS substrate, micromachined ultrasonic transducer, back cavity
Patent
Real-Time Axle-Load Sensing and AI-Enhanced Braking-Distance Prediction for Multi-Axle Heavy-Duty Trucks
Published on 2026-02-03 by Duk Sun Yun, Byung Chul Lim @MDPI
Abstract: Accurate braking-distance prediction for heavy-duty multi-axle trucks remains challenging due to the large gross vehicle weight, tandem-axle interactions, and strong transient load transfer during emergency braking. Recent studies on tire–road friction estimation, commercial-vehicle braking control (EBS/AEBS), and weigh-in-motion (WIM) sensing have highlighted that unmeasured vertical-load dynamics and time-varying friction are key sources of prediction uncertainty. To address thes[...]
Our summary: This study presents a framework for real-time axle-load sensing and AI-enhanced braking-distance prediction for heavy-duty trucks. It integrates dynamic load estimation with friction sensing and machine learning to improve prediction accuracy. The results show significant enhancements in braking-distance predictions compared to traditional methods, supporting advanced driver-assistance and safety management systems.
Axle-Load Sensing, Braking-Distance Prediction, Machine Learning, Heavy-Duty Trucks
Publication
Investigation of III-Nitride MEMS Pressure Sensor for High-Temperature Applications
Published on 2026-01-28 by Makhluk Hossain Prio, Maruf Morshed, Lavanya Muthusamy, Md Sohanur E. Hijrat Raju, Itmenon Towfeeq, Durga Gajula, Goutam Koley @MDPI
Abstract: High-temperature operation of AlGaN/GaN Heterojunction Field Effect Transistor embedded diaphragm-based MEMS pressure sensors have been investigated, which utilized their wide bandgap and piezo resistivity to perform stably at elevated temperatures. The performance of the pressure sensor was observed over a change in applied pressure of 35 kPa, which resulted in an experimentally measured change in drain–source resistance (ΔRDS/RDS(0)) of 0.32% at room temperature and[...]
Our summary: The study investigates a MEMS pressure sensor using AlGaN/GaN transistors for high-temperature applications. The sensor shows stable performance at temperatures up to 300 °C with a change in resistance of 0.65% at 250 °C. Finite Element simulations corroborate experimental results, indicating strong potential for reliable pressure sensing in harsh environments.
MEMS, III-Nitride, High-Temperature, Pressure Sensor
Publication
