This is our latest selection of worldwide publications and patents in english on Graphene, between many scientific online journals, classified and focused on graphene, wrinklon, straintronic, heterostrain, phonovoltaic, Raman spectroscopy, Klein tunneling, spintronic, chemical vapor deposition, molecular beam epitaxy, Dirac cone and phonon transport.
Increasing the Sensitivity of Aspergillus Galactomannan ELISA Using Silver Nanoparticle-Based Surface-Enhanced Raman Spectroscopy
Published on 2025-07-13 by A. D. Vasilyeva, L. V. Yurina, E. G. Evtushenko, E. S. Gavrilina, V. B. Krylov, N. E. Nifantiev, I. N. Kurochkin @MDPI
Abstract: Galactomannan (GM) is a polysaccharide secreted by opportunistic pathogenic fungi of the Aspergillus genus. It is prescribed as a diagnostic biomarker of invasive aspergillosis in immunocompromised patients by the guidelines for diagnosis and management of Aspergillus diseases. It has been shown previously that the measurement of soluble horseradish peroxidase (HRP) using surface-enhanced Raman scattering (SERS) of 2,3-diaminophenazine enzymatic reaction product on silver nanoparticles is largel[...]
Our summary: Highly sensitive detection of Aspergillus Galactomannan using Silver Nanoparticle-Based Surface-Enhanced Raman Spectroscopy, superior to colorimetric methods, with a detection limit of 4.3 pg per sample.
Aspergillus, Galactomannan, ELISA, Silver Nanoparticle-Based
Monolithically Integrated GaAs Nanoislands on CMOS-Compatible Si Nanotips Using GS-MBE
Published on 2025-07-12 by Adriana Rodrigues, Anagha Kamath, Hannah-Sophie Illner, Navid Kafi, Oliver Skibitzki, Martin Schmidbauer, Fariba Hatami @MDPI
Abstract: The monolithic integration of III-V semiconductors with silicon (Si) is a critical step toward advancing optoelectronic and photonic devices. In this work, we present GaAs nanoheteroepitaxy (NHE) on Si nanotips using gas-source molecular beam epitaxy (GS-MBE). We discuss the selective growth of fully relaxed GaAs nanoislands on complementary metal oxide semiconductor (CMOS)-compatible Si(001) nanotip wafers. Nanotip wafers were fabricated using a state-of-the-art 0.13 μm SiGe Bipolar [...]
Our summary: Monolithic integration of GaAs nanoislands on Si nanotips using GS-MBE enables advancement of optoelectronic devices. Selective growth of fully relaxed GaAs islands on CMOS-compatible Si(001) nanotip wafers. Investigation focuses on growth conditions influence on morphology, crystalline structure, and defect formation.
GaAs, Nanoislands, GS-MBE, CMOS-compatible
Publication
An Edge-Deployable Multi-Modal Nano-Sensor Array Coupled with Deep Learning for Real-Time, Multi-Pollutant Water Quality Monitoring
Published on 2025-07-10 by Zhexu Xi, Robert Nicolas, Jiayi Wei @MDPI
Abstract: Real-time, high-resolution monitoring of chemically diverse water pollutants remains a critical challenge for smart water management. Here, we report a fully integrated, multi-modal nano-sensor array, combining graphene field-effect transistors, Ag/Au-nanostar surface-enhanced Raman spectroscopy substrates, and CdSe/ZnS quantum dot fluorescence, coupled to an edge-deployable CNN-LSTM architecture that fuses raw electrochemical, vibrational, and photoluminescent signals without manual feature eng[...]
Our summary: Edge-deployable nano-sensor array with deep learning for real-time water quality monitoring achieves high-resolution detection of diverse pollutants, enabling smart water management and rapid environmental incident response.
nano-sensor array, deep learning, water quality monitoring, multi-modal
Publication
A Review on Laser-Induced Graphene-Based Electrocatalysts for the Oxygen Reduction Reaction in Electrochemical Energy Storage and Conversion
Published on 2025-07-10 by Giulia Massaglia, Marzia Quaglio @MDPI
Abstract: The increasing demand for efficient and sustainable energy conversion technologies has driven extensive research into alternative electrocatalysts for the oxygen reduction reaction (ORR). Platinum-based catalysts, while highly efficient, suffer from high costs, scarcity, and long-term instability Laser-Induced Graphene (LIG) has recently attracted considerable interest as an effective metal-free electrocatalyst for oxygen reduction reaction (ORR), owing to its remarkable electrical conductivity,[...]
Our summary: A review on the synthesis, properties, and performance of Laser-Induced Graphene-based electrocatalysts for the oxygen reduction reaction. Discussion on heteroatom doping and functionalization techniques. Highlighting challenges and future perspectives for LIG-based ORR catalysts.
Laser-Induced Graphene, Electrocatalysts, Oxygen Reduction Reaction, Energy Storage
Publication
Chiral Recognition of Carnitine Enantiomers Using Graphene Oxide-Modified Cadmium Telluride Quantum Dots
Published on 2025-07-08 by Haiyan Yuan, Yu Ma, Yuhui Zhang, Jidong Yang, Zhiyuan Mei, Chengcheng Pi, Yuan Peng @MDPI
Abstract: Carnitine (CA) is a chiral amino acid and mostly comes from meat and dairy products. CA cannot be found in fruits, vegetables, or other plants, so vegetarians are deficient in CA. CA exists in the form of D-carnitine (D-CA) and L-carnitine (L-CA); only L-carnitine has biological activity. L-CA promotes the oxidation of fatty acids and then causes the effect of weight loss. In this study, the fluorescence probe was established by using graphene oxide-modified cadmium telluride (CdTe) QDs (GO-CdTe[...]
Our summary: Chiral amino acid carnitine comes from meat and dairy, not fruits or vegetables. L-carnitine promotes weight loss by oxidizing fatty acids. Graphene oxide-modified cadmium telluride quantum dots used for chiral recognition of carnitine enantiomers.
Chiral Recognition, Graphene Oxide, Cadmium Telluride, Quantum Dots
Publication
Method for producing graphene
Patent published on the 2025-07-03 in WO under Ref WO2025142960 by AGC INC [JP] (Yoneta Kiyoto [jp], Ono Masashi [jp], Watanabe Hiroshi [jp], Yasui Yoji [jp], Yonemichi Tomohiro [jp])
Abstract: Provided is a method for producing graphene, in which heat bias inside a reaction vessel can be suppressed. Provided is a method for producing graphene using a thermal CVD device, wherein the thermal CVD device has a cylindrical reaction vessel inside of which a base material for graphene production is accommodated, a gas supply unit that is connected to the reaction vessel and supplies a hydrocarbon-containing raw material gas toward the base material, a gas discharge unit that discharges gas[...]
Our summary: Method for producing graphene with suppressed heat bias using a thermal CVD device and a shielding member inside the reaction vessel. Formula provided for optimal raw material gas flow rate based on vessel dimensions.
graphene, method, thermal CVD, reaction vessel
Patent
Thermal cvd apparatus and method for producing graphene
Patent published on the 2025-07-03 in WO under Ref WO2025142961 by AGC INC [JP] (Yoneta Kiyoto [jp], Ono Masashi [jp], Watanabe Hiroshi [jp], Yasui Yoji [jp], Yonemichi Tomohiro [jp])
Abstract: Provided is a thermal CVD apparatus for graphene production capable of suppressing heat unevenness inside a reaction vessel. The thermal CVD device for graphene production comprises: a reaction vessel in which a substrate for graphene production is housed; a gas supply section for supplying a raw material gas containing hydrocarbon; a gas discharge section for discharging gas from the inside of the reaction vessel; a heater for heating the inside of the reaction vessel; and a shielding member [...]
Our summary: Thermal CVD apparatus for producing graphene with heat suppression inside reaction vessel. Includes gas supply section, gas discharge section, heater, and shielding member. Shielding plates with defined aperture ratios for efficient heat transfer control.
thermal CVD, graphene production, apparatus, method
Patent
Thermal cvd device and method for producing graphene
Patent published on the 2025-07-03 in WO under Ref WO2025142959 by AGC INC [JP] (Yoneta Kiyoto [jp], Ono Masashi [jp], Watanabe Hiroshi [jp], Yasui Yoji [jp], Yonemichi Tomohiro [jp])
Abstract: Provided is a thermal CVD device for producing graphene capable of suppressing thermal non-uniformity inside a reaction vessel. The thermal CVD device for producing graphene is provided with: a reaction vessel in which a substrate for producing graphene is accommodated; a gas supply unit that is connected to the reaction vessel and supplies a raw material gas containing a hydrocarbon toward the substrate; a gas discharge unit that is connected on the opposite side to the gas supply unit side a[...]
Our summary: Thermal CVD device for producing graphene with suppressed thermal non-uniformity inside reaction vessel, equipped with gas supply unit, gas discharge unit, heater, and shielding members.
thermal CVD, graphene, device, method
Patent
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