Product Design, Manufacturing & Innovation Resources

最新の出版物:パッシベーションエミッタおよびリアセル(PERC)に関する特許

パッシベート処理されたエミッターとリアセル

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Perc technology
Perc技術は誘電体を通して太陽電池の効率を向上させます 不動態化 そして、最適化された背面デザイン。

パッシベーションエミッタ・リアセル(PERC)技術は、従来のアルミニウム裏面電界型太陽電池を拡張したもので、シリコン裏面に誘電体パッシベーション層(通常はAl2O3をSiNxで被覆したもの)を導入することで、再結合を抑制し、内部の裏面反射率を高めます。性能向上は、表面再結合速度の低下、少数キャリア寿命の向上、およびレーザーアブレーションによって形成された最適化された局所的な裏面コンタクトによって実現されます。

プロセス統合では、PECVDまたはALD成膜の均一性、スクリーン印刷による金属化、焼成プロファイル、および水素パッシベーションの動態が対象となります。ホウ素-酸素欠陥による光誘起劣化とその再生アニーリングによる緩和は、現在も活発な研究テーマとなっています。

このページでは、PERCセルの物理、製造プロセス、両面受光型、モジュールレベルの統合に関する最新の査読済み論文と特許を集約しています。

これは、パッシベーションエミッタおよびリアセル(PERC)に関する英語の世界中の出版物と特許の最新のセレクションです。多数の科学オンラインジャーナルから、リア表面パッシベーション、酸化アルミニウムパッシベーション、窒化ケイ素パッシベーション、ローカルリアコンタクト、レーザーコンタクト開口、誘電体パッシベーション層、表面再結合速度、少数キャリア寿命、リア反射率、内部量子効率、両面PERC、PERC+、リアエミッタ、フロント表面電界、選択的エミッタ、水素パッシベーション、焼成プロセス、Al2O3堆積、PECVD堆積、ALD堆積、リアレーザーアブレーション、接触抵抗、フィルファクター最適化、光誘起劣化、ホウ素酸素欠陥、再生アニーリング、ゲッタリングプロセス、バルク欠陥パッシベーション、開回路電圧向上、スクリーン印刷メタライゼーション、パッシベーションエミッタおよびリアセルに分類され、焦点を絞っています。

Material-specific lighting requirements and contemporary illumination strategies for galleries

Published on 2026-07-08 by @OXFORD

Abstract: AbstractMuseum lighting simultaneously governs visual presentation and light-induced degradation of artworks. With the widespread adoption of light emitting diode technologies, traditional illuminance- and dose-based standards are increasingly insufficient to address the heterogeneous photochemical responses of different materials. This review synthesizes recent research on material-specific lighting requirements and contemporary illumination strategies for galleries, focusing on spectral power [...]


Our summary: This review addresses material-specific lighting needs and modern strategies for gallery illumination. It highlights the varying sensitivity of artworks to different light wavelengths and the impact on visual presentation and degradation. Optimized lighting approaches can significantly enhance energy efficiency while preserving artwork integrity.

museum lighting, photochemical responses, illumination strategies, energy optimization

Publication

Germanium-rich metal contact layers for pmos source and drain contacts

Patent published on the 2026-07-01 in EP under Ref EP4770328 by INTEL CORP [US] (Metz Matthew V [us], Dewey Gilbert [us], Karpov Ilya V [us], Sen Gupta Arnab [us], Budrevich Aaron A [us])

Abstract: [0001] Outdiffusion of germanium from silicon-germanium source and drain regions of PMOS (p-channel metal-oxide-semiconductor) field effect transistors into metal contact layers located on the PMOS source and drain regions can reduce the concentration of germanium layer in the silicon-germanium in the vicinity of the silicon-germanium layer-metal contact layer interface. This region of reduced germanium concentration can increase the parasitic contact resistance, which can have a deleterious eff[...]


Our summary: Germanium outdiffusion from silicon-germanium regions can degrade PMOS transistor performance. Adding germanium to metal contact layers mitigates this issue. This approach helps maintain germanium concentration and reduces parasitic contact resistance.

Germanium, PMOS, contact resistance, outdiffusion

Patent

Female terminal

Patent published on the 2026-06-18 in WO under Ref WO2026126903 by AUTONETWORKS TECH LTD [JP] (Kobayashi Shingo [jp])

Abstract: Disclosed is a female terminal capable of reducing contact resistance by suppressing excessive deflection of a deflection part while maintaining deflection property for absorbing a positional deviation between a male terminal and a contact part. A female terminal is composed of a pair of metal flat sheets. Each of the metal flat sheets has: a contact part that comes into contact with a male terminal; a connection part that is connected to another conductive member; a deflection part that allow[...]


Our summary: The female terminal reduces contact resistance by minimizing excessive deflection while allowing for positional deviation. It consists of metal flat sheets with contact and connection parts, and a deflection part for relative displacement. Displacement suppression protrusions prevent excessive movement between the male and female terminals during connection.

female terminal, contact resistance, deflection part, conductive connection

Patent

Integrated processing device

Patent published on the 2026-06-18 in WO under Ref WO2026127186 by IUCF HYU INDUSTRY UNIV COOPERATION FOUNDATION HANYANG UNIV [KR] (Park Jin Seong [kr], Song Yun Heub [kr])

Abstract: Disclosed is an integrated processing device integrating a deposition process for forming semiconductor patterns and removal of an oxide film. According to embodiments, an integrated processing apparatus may be implemented with a structure which includes a deposition and etching unit that performs a chemical vapor deposition (CVD)-based deposition process, an atomic layer deposition (ALD)-based deposition process, and an atomic layer etching (ALE) process, a structure which includes, separate fr[...]


Our summary: The integrated processing device combines deposition and etching processes for semiconductor pattern formation. It features units for chemical vapor deposition (CVD), atomic layer deposition (ALD), and atomic layer etching (ALE). The apparatus can be structured with separate or combined units for efficient processing.

integrated processing device, semiconductor patterns, chemical vapor deposition, atomic layer etching

Patent

Electrical connection plate, terminal post extension member, battery cell member and battery assembly

Patent published on the 2026-06-18 in WO under Ref WO2026124357 by D AUS ENERGY STORAGE TECH XIAN CO LTD [CN] (Chen Mengqi [cn], Lei Zhengjun [cn])

Abstract: The present invention belongs to the field of batteries, and specifically relates to an electrical connection plate, a terminal post extension member, a battery cell member and a battery assembly, which overcome the problems of poor connection stability, low electrical conductivity, etc., in existing electrical connections. The electrical connection plate comprises an electrical connection portion, wherein the electrical connection portion is provided with first welding portions, the first weldi[...]


Our summary: The invention includes an electrical connection plate, terminal post extension member, and battery cell member to enhance connection stability and conductivity. It features first and second welding portions that form seams for effective electrical connections. The design reduces contact resistance and improves electrical conduction efficiency in battery assemblies.

electrical connection, battery assembly, welding portions, conductivity

Patent

Thermoelectric conversion member, production method for same, and thermoelectric conversion element

Patent published on the 2026-05-28 in WO under Ref WO2026110560 by NATIONAL INST FOR MATERIALS SCIENCE [JP] (Mori Takao [jp], Li Airan [jp])

Abstract: The present invention provides: a thermoelectric conversion member that makes it possible to reduce contact resistance between a MgAgSb-based thermoelectric material and an electrode; a production method for the same; and a thermoelectric conversion element. A thermoelectric conversion member according to the present invention comprises at least: a thermoelectric conversion layer which comprises a p-type thermoelectric material that includes magnesium (Mg), silver (Ag), and antimony (Sb); and [...]


Our summary: The invention presents a thermoelectric conversion member that reduces contact resistance between a MgAgSb-based material and an electrode. It includes a p-type thermoelectric layer and an Sb layer on its end surface. The production method involves forming and sintering a laminate of raw materials for the thermoelectric material and the Sb layer.

thermoelectric conversion, contact resistance, production method, MgAgSb

Patent

Photovoltaic cell preparation method and photovoltaic cell

Patent published on the 2026-05-27 in EP under Ref EP4750273 by ZHEJIANG JINKO SOLAR CO LTD [CN] (Zeng Xianhuan [cn], Wang Yilan [cn], Li Chao [cn], Zhang Ning [cn])

Abstract: The present disclosure relates to a photovoltaic cell preparation method, and a photovoltaic cell. The method includes: preparing a substrate including a first surface and a second surface opposite to each other, wherein the first surface is a textured structure; placing the substrate into an ALD deposition chamber; sequentially depositing an aluminum-silicon layer and an alumina layer on the first surface; placing the substrate having the aluminum-silicon layer and the alumina layer into a PECV[...]


Our summary: The disclosure presents a method for preparing photovoltaic cells. It involves depositing aluminum-silicon and alumina layers, followed by a silicon nitride layer using PECVD. This process enhances the cell s efficiency by reducing damage from ultraviolet light through improved chemical bonding.

Photovoltaic cell, ALD deposition, PECVD deposition, conversion efficiency

Patent

External control of photocleavage reactivity in polymer networks to reconcile photodegradability and photostability

Published on 2026-04-13 by Hiroshi Masai @NATURE

Abstract: Polymer Journal, Published online: 13 April 2026; doi:10.1038/s41428-026-01165-6This review summarizes our recent strategies for controlling the photostability and photoreactivity of polymer materials. Beyond conventional photoreactive polymers, we have developed polymer systems that exhibit cooperative reactions triggered by combined light and acid stimuli, as well as tunable photoreactivity based on reversible intramolecular isomerization. These systems show significant promise for a wide rang[...]


Our summary: This review discusses strategies for controlling the photostability and photoreactivity of polymer materials. It highlights the development of polymer systems that respond to combined light and acid stimuli. The findings suggest potential applications in light-induced degradation and processing in light-irradiated environments.

photocleavage, photostability, polymer networks, photoreactivity

Publication

取り上げるトピック: パッシベーションされたエミッタおよびリアセル、PERC技術、誘電体パッシベーション、アルミニウム裏面電界、Al2O3、SiNx、表面再結合速度、少数キャリア寿命、リアコンタクト、レーザーアブレーション、PECVD、ALD成膜、スクリーン印刷メタライゼーション、焼成プロファイル、水素パッシベーション、光誘起劣化、ホウ素酸素欠陥、再生アニーリング、ISO 9001、IEC 61215、IEC 61730、IEC 62804、およびASTM E2848。

用語集

Chemical Vapor Deposition (CVD): 気体前駆体の化学反応によって基板上に薄膜またはコーティングを形成するプロセスであり、固体材料の堆積を伴う。半導体製造や材料科学において一般的に用いられている。

歴史的背景

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(日付が不明または関連性がない場合、例えば「流体力学」などでは、その注目すべき出現時期の概算値が提示されます。)

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