Product Design, Manufacturing & Innovation Resources

最新の出版物:パッシベーションエミッタおよびリアセル(PERC)に関する特許

パッシベート処理されたエミッターとリアセル

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Perc technology
Perc技術は誘電体を通して太陽電池の効率を向上させます 不動態化 そして、最適化された背面デザイン。

パッシベーションエミッタ・リアセル(PERC)技術は、従来のアルミニウム裏面電界型太陽電池を拡張したもので、シリコン裏面に誘電体パッシベーション層(通常はAl2O3をSiNxで被覆したもの)を導入することで、再結合を抑制し、内部の裏面反射率を高めます。性能向上は、表面再結合速度の低下、少数キャリア寿命の向上、およびレーザーアブレーションによって形成された最適化された局所的な裏面コンタクトによって実現されます。

プロセス統合では、PECVDまたはALD成膜の均一性、スクリーン印刷による金属化、焼成プロファイル、および水素パッシベーションの動態が対象となります。ホウ素-酸素欠陥による光誘起劣化とその再生アニーリングによる緩和は、現在も活発な研究テーマとなっています。

このページでは、PERCセルの物理、製造プロセス、両面受光型、モジュールレベルの統合に関する最新の査読済み論文と特許を集約しています。

これは、パッシベーションエミッタおよびリアセル(PERC)に関する英語の世界中の出版物と特許の最新のセレクションです。多数の科学オンラインジャーナルから、リア表面パッシベーション、酸化アルミニウムパッシベーション、窒化ケイ素パッシベーション、ローカルリアコンタクト、レーザーコンタクト開口、誘電体パッシベーション層、表面再結合速度、少数キャリア寿命、リア反射率、内部量子効率、両面PERC、PERC+、リアエミッタ、フロント表面電界、選択的エミッタ、水素パッシベーション、焼成プロセス、Al2O3堆積、PECVD堆積、ALD堆積、リアレーザーアブレーション、接触抵抗、フィルファクター最適化、光誘起劣化、ホウ素酸素欠陥、再生アニーリング、ゲッタリングプロセス、バルク欠陥パッシベーション、開回路電圧向上、スクリーン印刷メタライゼーション、パッシベーションエミッタおよびリアセルに分類され、焦点を絞っています。

Semiconductor device and manufacturing method based on seedless silicon source/drain contact resistance reduction and laser process technology

Patent published on the 2026-04-23 in US under Ref US20260114019 by KOREA UNIV RESEARCH AND BUSINESS FOUNDATION [KR] (Yu Hyun-yong [kr], Park Jongyoun [kr], Park Euyjin [kr], Ahn Choong-hyun [kr], Lee Sangsu [kr])

Abstract: [0000] Disclosed are a semiconductor device based on seedless silicon (Si) source/drain contact resistance reduction and laser process technology and a method of fabricating the same. The semiconductor device includes an activated seedless Si layer formed on a substrate and at least one electrode formed on the seedless Si layer, and the seedless Si layer is crystalized through a first laser process and then activated through a second laser process.[...]


Our summary: The invention relates to a semiconductor device utilizing seedless silicon for reduced source/drain contact resistance. It involves a method of fabrication that includes a first laser process for crystallization and a second laser process for activation. The device features an activated seedless silicon layer on a substrate with at least one electrode.

Semiconductor, Seedless Silicon, Contact Resistance, Laser Process

Patent

Connector terminal, electrical connection assembly and connector

Patent published on the 2026-04-15 in EP under Ref EP4726932 by TYCO ELECTRONICS TECH SIP LTD [CN] (Du Yu [cn], Pan Lei [cn], Zhang Weidong [cn])

Abstract: [0001] The present invention discloses a connector terminal, an electrical connection assembly, and a connector. The connector terminal comprises: a terminal body and an elastic component. The terminal body includes: a mating part which has an insertion cavity that allows a mating terminal to be inserted and a first spring arm protruding into the insertion cavity. The elastic component is fixed to the mating part and has a second spring arm protruding into the insertion cavity. The elastic compo[...]


Our summary: The invention involves a connector terminal featuring a terminal body and an elastic component. The elastic component enhances electrical contact by clamping a mating terminal with its spring arms. It also improves insertion ease and contact resistance due to its material properties.

connector terminal, electrical connection, assembly, elastic component

Patent

External control of photocleavage reactivity in polymer networks to reconcile photodegradability and photostability

Published on 2026-04-13 by Hiroshi Masai @NATURE

Abstract: Polymer Journal, Published online: 13 April 2026; doi:10.1038/s41428-026-01165-6This review summarizes our recent strategies for controlling the photostability and photoreactivity of polymer materials. Beyond conventional photoreactive polymers, we have developed polymer systems that exhibit cooperative reactions triggered by combined light and acid stimuli, as well as tunable photoreactivity based on reversible intramolecular isomerization. These systems show significant promise for a wide rang[...]


Our summary: This review discusses strategies for controlling the photostability and photoreactivity of polymer materials. It highlights the development of polymer systems that respond to combined light and acid stimuli. The findings suggest potential applications in light-induced degradation and processing in light-irradiated environments.

photocleavage, photostability, polymer networks, photoreactivity

Publication

Method of manufacturing point contact solar cells and apparatus using the same

Patent published on the 2026-04-09 in US under Ref US20260101606 by TERASOLAR ENERGY MAT CORP [TW] (Wu Pang-hao [tw], Lin Shih-cheng [tw], Tang Cheng-syun [tw])

Abstract: [0000] A method of manufacturing high-efficiency solar cells by reducing contact resistance and forming point-contacts is disclosed. The method includes providing a silicon substrate with a metallic electrode on its surface, and applying a high-frequency pulsed voltage comprised of pulse-on time and pulse-off time to the metallic electrode. The method further includes illuminating the silicon substrate using a laser and scanning the substrate under the high-frequency pulsed voltage. During the p[...]


Our summary: A method for manufacturing high-efficiency solar cells involves reducing contact resistance through point-contacts. It utilizes a silicon substrate with a metallic electrode, applying a high-frequency pulsed voltage and laser illumination. The process thermally inter-diffuses metal and silicon to create separate contact regions.

solar cells, point contact, silicon substrate, high-frequency pulsed voltage

Patent

In-plane controllably grown germanium nanowire, preparation method therefor, and use thereof

Patent published on the 2026-03-26 in WO under Ref WO2026061089 by INST OF PHYSICS CHINESE ACADEMY OF SCIENCES [CN] (Wang Jianhuan [cn], Zhang Jianjun [cn], Xu Hongqi [cn])

Abstract: Disclosed in the present application are an in-plane controllably grown germanium nanowire, a preparation method therefor, and the use thereof. The method comprises: obtaining a strip-shaped platform structure on a silicon germanium substrate; pretreating the silicon germanium substrate having the strip-shaped platform structure; and using a molecular beam epitaxy growth technique to sequentially grow a silicon germanium buffer layer, a silicon spacer layer, a pure germanium layer and a silicon [...]


Our summary: The application discloses a method for preparing in-plane controllably grown germanium nanowires. It involves a silicon germanium substrate and molecular beam epitaxy to create multiple layers. This method overcomes high contact resistance and improves material mobility, benefiting quantum dot devices and spin bits.

germanium nanowire, molecular beam epitaxy, silicon germanium substrate, quantum dot devices

Patent

Intelligent power tower grounding monitoring method based on the internet of things

Patent published on the 2026-02-06 in LU under Ref LU602827 by YUNNAN POWER GRID LLC CHUXIONG POWER SUPPLY BUREAU [CN] (Sun Shixiong [cn], Zeng Xianghui [cn], Cheng Jun [cn], Yang Chunhuan [cn], Zhaqng Nongtao [cn], Dai Xianzhong [cn], Wang Zelang [cn], Xu Zhengjiao [cn], Yin Honglang [cn], Li Fangzhou [cn])

Abstract: The present invention belongs to the field of grounding monitoring technology, and specifically to an intelligent power tower grounding monitoring method based on the Internet of Things. The method includes the following steps: obtaining a real-time position of a wire clamp, authorizing, by a fog end terminal, operation permission to a user terminal, and activating three-color indicators at the same time; and detecting a fastening force in real time based on a pressure sensor, and monitoring a r[...]


Our summary: The invention describes an intelligent method for monitoring power tower grounding using IoT technology. It involves real-time position tracking of wire clamps, user authorization via a fog end terminal, and simultaneous activation of indicators. The system detects abnormal fastening force and resistance values, triggering alarms for necessary inspections.

grounding monitoring, Internet of Things, real-time detection, fog end terminal

Patent

Thermographic Diagnosis of Corrosion-Driven Contact Degradation in Power Equipment Using Infrared Imaging and Color-Channel Decomposition

Published on 2026-02-01 by Milton Ruiz, Carlos Betancourt @MDPI

Abstract: This study presents a measurement&amp;ndash;modeling pathway for diagnosing corrosion-driven contact degradation in power equipment using infrared thermography and color-channel analysis. Thermal data were acquired with a Fluke Ti450 (LWIR, 7.5&amp;ndash;14 &amp;mu;m) under typical high-altitude, temperate conditions in Quito, Ecuador. Radiometric parameters (emissivity, distance, ambient/reflected temperature, and humidity) are reported explicitly, and images are processed with a re[...]


Our summary: This study outlines a method for diagnosing corrosion-driven contact degradation in power equipment using infrared thermography and color-channel analysis. Thermal data were collected in Quito, Ecuador, with a focus on radiometric parameters and image processing techniques. The approach is validated through field cases, emphasizing the importance of clear radiometric practices for effective maintenance decisions.

Thermography, Corrosion, Infrared Imaging, Power Equipment

Publication

Thickness-Driven Structural Transition and Its Impact on Thermoelectric and Phonon Transport in Single-Walled Carbon Nanotube Films

Published on 2026-01-29 by Yuto Nakazawa, Yoshiyuki Shinozaki, Keisuke Uchida, Shuya Ochiai, Shugo Miyake, Masayuki Takashiri @MDPI

Abstract: Single-walled carbon nanotube (SWCNT) films are promising materials for thermoelectric power generation; however, the dependence of their transport properties on their thickness remains insufficiently understood. This study examined the relationship between the transport properties and the internal structure of SWCNT films with thicknesses ranging from 28 to 193 &amp;micro;m. The structural, mechanical, thermoelectric, and phonon transport properties exhibited a discontinuous dependence on t[...]


Our summary: This study investigates the impact of thickness on the transport properties of single-walled carbon nanotube films. It finds that films up to 72 µm maintain high electrical conductivity, while thicker films exhibit increased contact resistance and reduced thermal conductivity. The results offer insights for optimizing SWCNT-based thermoelectric generators.

Carbon Nanotubes, Thermoelectric Properties, Phonon Transport, Structural Transition

Publication

取り上げるトピック: パッシベーションされたエミッタおよびリアセル、PERC技術、誘電体パッシベーション、アルミニウム裏面電界、Al2O3、SiNx、表面再結合速度、少数キャリア寿命、リアコンタクト、レーザーアブレーション、PECVD、ALD成膜、スクリーン印刷メタライゼーション、焼成プロファイル、水素パッシベーション、光誘起劣化、ホウ素酸素欠陥、再生アニーリング、ISO 9001、IEC 61215、IEC 61730、IEC 62804、およびASTM E2848。

用語集

Chemical Vapor Deposition (CVD): 気体前駆体の化学反応によって基板上に薄膜またはコーティングを形成するプロセスであり、固体材料の堆積を伴う。半導体製造や材料科学において一般的に用いられている。

歴史的背景

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(日付が不明または関連性がない場合、例えば「流体力学」などでは、その注目すべき出現時期の概算値が提示されます。)

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