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Últimas publicaciones y patentes sobre puntos cuánticos

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Esta es nuestra última selección de publicaciones y patentes mundiales en inglés sobre Quantum Dots, entre muchas revistas científicas en línea, clasificadas y centradas en quantum dot, exciton, quantum yield, biexciton, Förster coupling, multiple exciton generation, tunneling coupling, spin qubit, cadmium-free quantum dot, inhomogeneous broadening, Multiple exciton generation (MEG), Auger recombination y CFQD.

A qubit processing method

Patent published on the 2026-05-21 in WO under Ref WO2026104209 by QUANTUM MOTION TECH LIMITED [GB] (Siegel Adam [gb], Jnane Hamza [gb], Gonzalez-zalba Fernando [gb])

Abstract: A method is disclosed for performing operations in a silicon chip qubit processor. The method involves providing a qubit at a first quantum dot, having a first resonant spin frequency and transferring the qubit to a second quantum dot, having a second resonant spin frequency. The method involves applying an AC electromagnetic field to the first and second quantum dots in order to manipulate the qubit spin state, wherein the applied AC electric field has a frequency which is calculated from a wei[...]


Our summary: A method for qubit processing on silicon chips is disclosed. It involves transferring qubits between quantum dots while manipulating their spin states using an AC electromagnetic field. The method also includes performing two-qubit operations on pairs of shuttled qubits.

qubit, silicon chip, electromagnetic field, two-qubit operations

Patent

quantum dot lasers and the end of the optical isolator

Published on 2026-05-08 by Shujie Pan, Junjie Yang, Siming Chen @NATURE

Abstract: Light: Science & Applications, Published online: 08 May 2026; doi:10.1038/s41377-026-02290-wQuantum dot (QD) lasers enable intrinsically feedback-tolerant, isolator-free silicon photonic integrated circuits (PICs), eliminating the bulky optical isolators traditionally required to suppress destabilizing reflections. Owing to their delta-function-like density of states, near-zero linewidth enhancement factor, and strong damping, QD lasers sustain stable, high-speed operation without coherence [...]


Our summary: Quantum dot lasers eliminate the need for optical isolators in silicon photonic integrated circuits. They provide stable, high-speed operation under extreme optical feedback. This technology facilitates compact and scalable optical interconnects for industrial applications.

quantum dot lasers, optical isolators, silicon photonics, integrated circuits

Publication

Long-lived excitonic beatings in finite chains under adiabatic motion

Published on 2026-05-08 by Ritesh Pant, Sebastian Wster and Alexander Eisfeld @IOP SCIENCE

Abstract: We investigate transport of a Frenkel exciton in finite one-dimensional chains, where temperature induced interparticle vibrations dynamically modulate the electronic couplings between neighboring particles. In the adiabatic regime, where vibrational motion is slower than excitation transfer between sites, this modulation gives rise to long-lived oscillations in the exciton populations. These oscillations, which we refer to as adiabatic beatings, are most pronounced at the boundaries of the chai[...]


Our summary: This study explores the transport of a Frenkel exciton in finite one-dimensional chains under adiabatic conditions. Long-lived oscillations, termed adiabatic beatings, emerge due to temperature-induced interparticle vibrations modulating electronic couplings. The amplitude of these beatings varies with chain length and particle parity, and they persist even in the presence of disorder.

Frenkel exciton, adiabatic motion, exciton populations, interparticle vibrations

Publication

Scalable qubit arrays with merged barrier gate

Patent published on the 2026-05-07 in WO under Ref WO2026095797 by UNIV DELFT TECH [NL] (Ivlev Alexander Sergeyevich [nl])

Abstract: Barrier-gate configurations for quantum-dot structures are disclosed, as well as methods to operate quantum-dot structures provided with such barrier-gate configurations and methods to fabricate quantum-dot structures provided with such barrier-gate configurations. The quantum-dot structure comprises a quantum-dot array, e.g., a two-dimensional quantum-dot array or a three-dimensional quantum-dot array. Each quantum dot in the quantum-dot array is provided with a plunger gate. The quantum-dot st[...]


Our summary: The content discusses scalable qubit arrays utilizing merged barrier gates. It details configurations and operational methods for quantum-dot structures with these barrier gates. Additionally, it describes fabrication techniques for creating such quantum-dot structures.

Quantum-dot structures, Barrier gates, Qubit arrays, Fabrication methods

Patent

Structured beam controlled super-resolution in quantum dots via rapid adiabatic passage

Published on 2026-04-23 by Partha Das, Samit Kumar Hazra and Tarak Nath Dey @IOP SCIENCE

Abstract: We theoretically investigate rapid adiabatic passage-based super-resolution microscopy in a two-level quantum dot (QD) system. The system consists of QD interacting with the two structured beams, accompanied by chirping and a time delay. The central concept of this work lies in the stimulated emission depletion microscopy technique. To understand this physical mechanism behind super-resolved spot formation, we use the variational master equation for density matrix where radiative and non-radiati[...]


Our summary: This study explores super-resolution microscopy using rapid adiabatic passage in a two-level quantum dot system. It demonstrates how structured beams and specific envelope shapes can enhance image resolution while eliminating unwanted artifacts. The findings indicate potential applications in nanoscale imaging and bioimaging with quantum dots.

super-resolution microscopy, quantum dots, structured beams, adiabatic passage

Publication

Theoretical investigation on nonequilibrium Peltier effect in quantum dots coupled to Majorana bound states

Published on 2026-04-23 by Jia Liu, Feng Chi, Zhen-Guo Fu, Zi-Chuan Yi and Li-Ming Liu @IOP SCIENCE

Abstract: We theoretically investigate the nonequilibrium Peltier effect in a system comprises of quantum dots (QDs) side-coupled to Majorana bound states (MBSs), explicitly contrasting it against both topologically trivial Andreev bound states (ABSs) and a regular fermionic system—realized as a T-shaped double-QD structures (TDQDs). Using the non-equilibrium Green’s function method, we calculate the charge current, entropy current, and the nonlinear Peltier coefficient (Π) under finite bias. We repo[...]


Our summary: This study investigates the nonequilibrium Peltier effect in quantum dots coupled to Majorana bound states. It highlights the distinct thermoelectric characteristics of Majorana systems compared to trivial fermionic and Andreev states. The findings suggest a novel approach for energy flow control in quantum devices through the nonlinear Peltier effect.

Peltier effect, Majorana bound states, quantum dots, thermoelectric response

Publication

Light-emitting element, display device, and light-emitting layer manufacturing method

Patent published on the 2026-04-23 in WO under Ref WO2026083513 by SHARP DISPLAY TECHNOLOGY CORP [JP] (Yaguchi Yuma)

Abstract: A red light-emitting element (5R), which is a light-emitting element, is provided with a red light-emitting layer (24 REM), which is a light-emitting layer containing quantum dots (QD1, QD2), a matrix (MR) containing an oxide, and alcohol protection groups (APG).[...]


Our summary: A red light-emitting element features a light-emitting layer with quantum dots. The layer includes a matrix made of oxide and alcohol protection groups. This method pertains to the manufacturing of display devices.

light-emitting element, display device, quantum dots, manufacturing method

Patent

Quantum device and method for production

Patent published on the 2026-04-16 in US under Ref US20260107695 by COMMISSARIAT ENERGIE ATOMIQUE [FR] (Labracherie Valentin [fr], Bertrand Benoit [fr], Niebojewski Heimanu [fr])

Abstract: [0000] A quantum device including an active zone extending along a longitudinal direction, and QD gates extending along a transverse direction, the QD gates being disposed on either side of the active zone, opposite one another, to control a quantum dot. The device includes transverse gates, each disposed on a pair of QD gates opposite one another, and separated from the QD gates and from the active zone by a gate dielectric. Each transverse gate is configured to control a transverse tunnel barr[...]


Our summary: The quantum device features an active zone and QD gates arranged to control a quantum dot. Transverse gates are positioned on either side of the active zone, separated by a gate dielectric. These gates regulate the transverse tunnel barrier between the QD gates.

Quantum device, Quantum dots, Transverse gates, Tunnel barrier

Patent

Temas tratados: Elementos de Tierras Raras, Recubrimiento de Barrera Térmica, Microestructura, Propiedades Mecánicas, Síntesis por Combustión en Solución, Dureza Vickers, Tenacidad a la Fractura, Expansión Térmica, Efecto Hall, Dopado, Perovskita, Resistencia a la Corrosión, Ensayo de Ciclo Térmico, Refinamiento del Grano, Rendimiento a Alta Temperatura, Densidad de Portadores de Carga, Propiedades de Transporte, Organización Internacional de Normalización (ISO), ASTM Internacional, Instituto Nacional Americano de Normalización (ANSI), Comisión Electrotécnica Internacional (IEC) y Organización Internacional de Normalización (ISO).

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