
有关渗透的最新出版物和专利
This week: silicon nitride, oxide layer, plasma-enhanced atomic layer deposition, conversion, thermal driven, water desalination, forward osmosis, draw solution, ceramic
Chemical vapor deposition (CVD) is a materials-processing technique in which volatile precursor gases are delivered to a heated substrate where they chemically react or decompose to form a conformal solid film or 涂层. It enables high-purity, uniform, and compositionally controlled thin films (metals, oxides, nitrides, carbides and semiconductor compounds) used across product design, R&D and production for electronics, optics, protective coatings, 微机电系统 and catalysts. By tuning parameters such as temperature, pressure, gas flow and precursor chemistry—and by choosing variants like LPCVD, PECVD or MOCVD—CVD can be optimized for film microstructure, performance, throughput and scalability from lab to volume manufacture.
This week: silicon nitride, oxide layer, plasma-enhanced atomic layer deposition, conversion, thermal driven, water desalination, forward osmosis, draw solution, ceramic
{{标题}}
{%,如果摘录 %}{{ 摘录 | truncatewords:55 }}
{% endif %}