A Carbon Nanotube Field-Effect Transistor (CNTFET) utilizes a single carbon nanotube (CNT) or an array of CNTs as the channel material instead of bulk silicon. Depending on its chirality (the arrangement of its graphene lattice), a CNT can be either metallic or semiconducting, making it a versatile building block for nanoelectronic devices with superior performance potential.
Carbon Nanotube Field-Effect Transistor (CNTFET)
- Sumio Iijima
- Cees Dekker
- Phaedon Avouris
A CNTFET operates on the same principle as a conventional MOSFET. It has a source, a drain, and a gate terminal. The key difference is the channel, which is formed by one or more carbon nanotubes. When a voltage is applied to the gate, it creates an electric field that modulates the conductivity of the semiconducting CNT, turning the flow of current between the source and drain ‘on’ or ‘off’. The exceptional properties of CNTs make them highly attractive for this application. They exhibit extremely high carrier mobility, meaning electrons can travel through them with very little scattering, which translates to faster switching speeds and higher current-carrying capacity. Their one-dimensional structure provides excellent electrostatic control by the gate, reducing short-channel effects that plague scaled-down silicon transistors.
However, significant challenges have prevented the widespread commercialization of CNTFETs. A major hurdle is the synthesis of CNTs. Typical synthesis methods produce a mixture of metallic and semiconducting nanotubes. The metallic ones act as short circuits, preventing the transistor from turning off completely and leading to high power leakage. Separating these types with 100% purity on a large scale is difficult and expensive. Another challenge is placing the CNTs with precise alignment and density on a wafer. Finally, making low-resistance electrical contacts to the ends of the nanotubes is non-trivial and can limit overall device performance.
Despite these issues, research has made significant progress. Techniques have been developed to selectively remove metallic CNTs or to convert them into semiconducting ones. Demonstrations of complex circuits, including a 16-bit microprocessor, have been built using CNTFETs, proving the viability of the technology. Their unique properties also make them ideal for novel applications like highly sensitive biosensors, where the CNT’s conductance changes dramatically upon the attachment of a target molecule, and for flexible electronics due to their inherent mechanical strength and flexibility.
النوع
Disruption
الاستخدام
Precursors
- invention of the field-effect transistor (FET)
- discovery of fullerenes
- discovery and synthesis of carbon nanotubes
- development of semiconductor fabrication techniques (lithography, deposition)
التطبيقات
- high-frequency electronics
- chemical and biological sensors
- flexible and transparent electronics
- potential replacement for silicon in future logic circuits
براءات الاختراع:
- US6835601B2
- US7015501B2
Potential Innovations Ideas
!!مستويات !!! العضوية مطلوبة
يجب أن تكون عضوًا !!! مستويات!!! للوصول إلى هذا المحتوى.
متاح للتحديات الجديدة
مهندس ميكانيكي، مدير مشروع أو بحث وتطوير
متاح لتحدي جديد في غضون مهلة قصيرة.
تواصل معي على LinkedIn
تكامل الإلكترونيات المعدنية والبلاستيكية، التصميم حسب التكلفة، ممارسات التصنيع الجيدة (GMP)، بيئة العمل، الأجهزة والمواد الاستهلاكية متوسطة إلى عالية الحجم، الصناعات الخاضعة للتنظيم، شهادات CE وFDA، التصميم بمساعدة الحاسوب (CAD)، Solidworks، الحزام الأسود Lean Sigma، شهادة ISO 13485 الطبية
احصل على جميع المقالات الجديدة
مجاني، لا يوجد بريد عشوائي، ولا يتم توزيع البريد الإلكتروني ولا إعادة بيعه
أو يمكنك الحصول على عضويتك الكاملة -مجانًا- للوصول إلى جميع المحتويات المحظورة >هنا<
Historical Context
Carbon Nanotube Field-Effect Transistor (CNTFET)
(if date is unknown or not relevant, e.g. "fluid mechanics", a rounded estimation of its notable emergence is provided)
Related Invention, Innovation & Technical Principles