这是我们在众多科学在线期刊中最新精选的有关半导体的全球出版物和专利，分类和重点关注半导体、二极管、MOFSET、PN 结、N 型、P 型、BJT 和 JFET。
Monolithically Integrated GaAs Nanoislands on CMOS-Compatible Si Nanotips Using GS-MBE
Published on 2025-07-12 by Adriana Rodrigues, Anagha Kamath, Hannah-Sophie Illner, Navid Kafi, Oliver Skibitzki, Martin Schmidbauer, Fariba Hatami @MDPI
Abstract: The monolithic integration of III-V semiconductors with silicon (Si) is a critical step toward advancing optoelectronic and photonic devices. In this work, we present GaAs nanoheteroepitaxy (NHE) on Si nanotips using gas-source molecular beam epitaxy (GS-MBE). We discuss the selective growth of fully relaxed GaAs nanoislands on complementary metal oxide semiconductor (CMOS)-compatible Si(001) nanotip wafers. Nanotip wafers were fabricated using a state-of-the-art 0.13 μm SiGe Bipolar [...]
Our summary: Monolithic integration of GaAs nanoislands on Si nanotips using GS-MBE enables advancement of optoelectronic devices. Selective growth of fully relaxed GaAs islands on CMOS-compatible Si(001) nanotip wafers. Investigation focuses on growth conditions influence on morphology, crystalline structure, and defect formation.
GaAs, Nanoislands, GS-MBE, CMOS-compatible
Quantum microwave-to-optical transducer and associated methods
Patent published on the 2025-06-19 in WO under Ref WO2025128892 by GOVERNMENT OF THE US SECRETARY OF COMMERCE [US] (Silverman Kevin Lawrence [us], Decrescent Ryan Anthony [us], Mirin Richard Paul [us], Autry Travis [us], Wang Zixuan [us], Imany Poolad [us])
Abstract: A quantum transducer includes a back gate having a doped semiconductor layer, a tunnel barrier located above the doped semiconductor layer, a quantum dot contacting a top surface of the tunnel barrier, a cap layer located above the tunnel barrier and covering the quantum dot, a surface acoustic wave (SAW) resonator located above the cap layer, a SAW transducer coupled to the SAW resonator, and a top gate located above the SAW resonator. The SAW resonator is mechanically coupled to the quantum do[...]
Our summary: Quantum transducer with back gate, doped semiconductor layer, tunnel barrier, quantum dot, cap layer, SAW resonator, SAW transducer, top gate. Depth and conductivity of doped layer selected to minimize SAW attenuation and achieve high piezoelectric coupling constant.
quantum transducer, microwave-to-optical, surface acoustic wave resonator, piezoelectric coupling constant
Patent
Photovoltaic cells with bypass diodes
Patent published on the 2025-06-17 in US under Ref US12336305 by TANDEM PV [US] (Bailie Colin David [us], Eberspacher Chris [us])
Abstract: Embodiments of the disclosure include a photovoltaic device comprising a plurality of photovoltaic cells coupled in series. The photovoltaic cells comprising a first contact layer, a first charge transport layer (CTL) disposed over the first contact layer, an absorber layer disposed over the first CTL, a second CTL disposed over the absorber layer; and a second contact layer disposed over the second CTL. Each photovoltaic cell in the plurality of photovoltaic cells includes a diode region, the d[...]
Our summary: Photovoltaic device with bypass diodes, series-coupled photovoltaic cells, diode region with feature extending through layers.
Photovoltaic cells, bypass diodes, photovoltaic device, charge transport layer
Patent
Biosensor including corrugated semiconductor or semi-metal material and manufacturing method thereof
Patent published on the 2025-03-06 in WO under Ref WO2025048258 by G MEDICS KOREA CO LTD [KR] (Hwang Tae Young [kr], Park In Su [kr], Kim Chun Seok [kr], Song Seung Yong [kr], Ryu Jae Chul [kr])
Abstract: A biosensor according to the present invention comprises: a substrate extending in a first horizontal direction and a second horizontal direction intersecting the first horizontal direction; a source electrode and a drain electrode spaced apart from each other on the substrate: a corrugated semiconductor (or semi-metal) channel which is disposed between the source electrode and the drain electrode and has peak portions and valley portions having a height difference in the vertical direction on t[...]
Our summary: Substrate with source and drain electrodes, corrugated semiconductor channel with peak and valley portions, probe chemically bonding to target material, gate electrode for control.
biosensor, corrugated semiconductor, manufacturing method, probe
Patent
One chamber multi-station selective metal removal
Patent published on the 2025-03-06 in WO under Ref WO2025048924 by APPLIED MAT INC [US] (Yue Shiyu [us], Patel Sahil Jaykumar [us], Lei Yu [us], Lei Wei [us], Hsu Chih-hsun [us], Xu Yi [us], Hairisha Abulaiti [us], Trinh Cong [us], Yang Yixiong [us], Oh Ju Hyun [us], Zhang Aixi [us], Gao Xingyao [us], Wang Rongjun [u)
Abstract: A method of selective metal removal via gradient oxidation for a gap-fill includes performing process cycles, each process cycle including placing a wafer having a semiconductor structure thereon into a first processing station, the semiconductor structure including a dielectric layer patterned with a feature formed therein and a seed layer formed on sidewalls and a bottom surface of the feature and a top surface of the dielectric layer, performing a reduction process on the wafer in the first p[...]
Our summary: One chamber multi-station selective metal removal method via gradient oxidation for a gap-fill involves process cycles placing a wafer with a semiconductor structure into processing stations, performing reduction, oxidation, and etch processes in each station, all within a processing chamber.
selective metal removal, gradient oxidation, gap-fill, semiconductor structure
Patent
Methods for forming low-k dielectric materials with reduced dielectric constant and high mechanical strength
Patent published on the 2025-03-06 in WO under Ref WO2025049147 by APPLIED MAT INC [US] (Lu Rui [us], Xie Bo [us], Zhao Kent [us], Yao Shanshan [us], Li Xiaobo [us], Lang Chi-i [us], Xia Li-qun [us], Venkataraman Shankar [us])
Abstract: Exemplary semiconductor processing methods may include providing a first silicon-containing precursor and a second silicon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region of the semiconductor processing chamber. The first silicon-containing precursors may include Si-O bonding. The methods may include forming a plasma of the first silicon-containing precursor and the second silicon-containing precursor in [...]
Our summary: Methods for forming low-k dielectric materials with reduced dielectric constant and high mechanical strength, including providing silicon-containing precursors, forming plasma, and depositing a layer with dielectric constant less than 3.0.
low-k dielectric materials, reduced dielectric constant, high mechanical strength, semiconductor processing
Patent
Etching compositions
Patent published on the 2025-03-06 in WO under Ref WO2025049387 by FUJIFILM ELECTRONIC MAT U S A INC [US] (Hayashi Kohei [us])
Abstract: The present disclosure is directed to etching compositions that are useful for, e.g., selectively removing a boron phosphorus glass (BPSG) film from a semiconductor substrate as an intermediate step in a multistep semiconductor manufacturing process.[...]
Our summary: Selectively remove BPSG film from semiconductor substrate, Intermediate step in multistep manufacturing process, Useful etching compositions.
etching compositions, boron phosphorus glass, semiconductor substrate, semiconductor manufacturing process
Patent
