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关于金属钛的最新出版物和专利

快速成型制造, 合金, 涂层, 腐蚀, 制造业, 机械性能, 可持续性指标, 钛

这是我们最新精选的有关钛金属的全球出版物和专利，这些出版物和专利在众多科学在线期刊中进行了分类，并以钛和 Ti-6Al-4V 为主题。

Size Effect of CsPbBr3

Published on 2025-07-09 by Ying Lv, Menghan Duan, Jie An, Yunpeng Wang, Luchao Du @MDPI

Abstract: Lead halide perovskite quantum dots, also known as perovskite nanocrystals, are considered one of the most promising photovoltaic materials for solar cells due to their outstanding optoelectronic properties and simple preparation techniques. The key factors restricting the photoelectric conversion efficiency of solar cell systems are the separation and transmission performances of charge carriers. Here, femtosecond time-resolved ultrafast spectroscopy was used to measure the interfacial charge t[...]

Our summary: Lead halide perovskite quantum dots show promising photovoltaic properties due to their optoelectronic features. The study analyzes the impact of CsPbBr3 size on charge transfer dynamics with TiO2 using ultrafast spectroscopy. Results indicate slower electron transfer and recombination as CsPbBr3 nanocrystals increase in size, suggesting potential for improved solar cell materials.

CsPbBr3, quantum dots, charge transfer, size effect

Publication

Methods of improving pmos transistor performance

Patent published on the 2025-03-06 in WO under Ref WO2025049509 by APPLIED MAT INC [US] (Lin Yongjing [us], Liu Zhihui [us], Garg Sourav [us], Li Lu [us], Yan Haoming [us], Sha Haoyan [us], Bhuyan Bhaskar Jyoti [us], Chen Shih Chung [us], Devrajan Janardhan [us], Gandikota Srinivas [us])

Abstract: Methods of manufacturing electronic devices, such as transistors (negative metal-oxide-semiconductor (NMOS) transistors (e.g., an N-metal stack) and positive metal-oxide-semiconductor (PMOS) transistors (e.g., a P-metal stack)) are described. Embodiments of the disclosure are directed to methods of improving PMOS transistor performance by inhibiting N-metal layer growth. The present disclosure provides two types of processes to reduce or inhibit N-metal layer growth. The disclosure provides meth[...]

Our summary: Methods of improving PMOS transistor performance by inhibiting N-metal layer growth through forming a self-assembled monolayer (SAM) or a silicon-containing layer on the metal surface of the transistor.

Marking agent and methods of making and using

Patent published on the 2025-03-06 in WO under Ref WO2025049655 by THE COCA COLA COMPANY [US] (Zeng Wen [us], Zeng William [us], Mori Yukari [us])

Abstract: The present disclosure relates to marking agents and plastic bottles having marking agents. An example marking agent can include: 40 to 70 parts of carrier vegetable oil, 1 to 10 parts of endothermic auxiliary agent 1, 10 to 30 parts of endothermic auxiliary agent 2, and 5 to 20 parts of another auxiliary agent. The carrier vegetable oil is epoxidized soybean oil, refined rapeseed oil, pressed peanut oil or a mixture thereof; the endothermic auxiliary agent 1 is titanium nitride, fine carbon bla[...]

Our summary: Methods of making and using marking agents for plastic bottles, including carrier vegetable oil and various auxiliary agents, to improve marking efficiency and printing clarity while reducing energy consumption.

marking agent, plastic bottles, auxiliary agent, vegetable oil

Patent

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涵盖的主题： 金属钛、Ti-6Al-4V、多目标优化、铣削、可持续性能、微观结构、机械性能、奥氏体不锈钢、现场测试、PMOS 晶体管、性能、N-金属层、类金刚石碳涂层、等离子体辅助化学气相沉积、腐蚀行为、耐磨性、纳米多晶纯钛、ISO 5832-3、ASTM F136、ASTM B348、ISO 13715 和 ASTM F1472。