This is our latest selection of worldwide publications and patents in english on Titanium Metal, between many scientific online journals, classified and focused on titanium and Ti-6Al-4V.
Size Effect of CsPbBr3
Published on 2025-07-09 by Ying Lv, Menghan Duan, Jie An, Yunpeng Wang, Luchao Du @MDPI
Abstract: Lead halide perovskite quantum dots, also known as perovskite nanocrystals, are considered one of the most promising photovoltaic materials for solar cells due to their outstanding optoelectronic properties and simple preparation techniques. The key factors restricting the photoelectric conversion efficiency of solar cell systems are the separation and transmission performances of charge carriers. Here, femtosecond time-resolved ultrafast spectroscopy was used to measure the interfacial charge t[...]
Our summary: Lead halide perovskite quantum dots show promising photovoltaic properties due to their optoelectronic features. The study analyzes the impact of CsPbBr3 size on charge transfer dynamics with TiO2 using ultrafast spectroscopy. Results indicate slower electron transfer and recombination as CsPbBr3 nanocrystals increase in size, suggesting potential for improved solar cell materials.
CsPbBr3, quantum dots, charge transfer, size effect
Methods of improving pmos transistor performance
Patent published on the 2025-03-06 in WO under Ref WO2025049509 by APPLIED MAT INC [US] (Lin Yongjing [us], Liu Zhihui [us], Garg Sourav [us], Li Lu [us], Yan Haoming [us], Sha Haoyan [us], Bhuyan Bhaskar Jyoti [us], Chen Shih Chung [us], Devrajan Janardhan [us], Gandikota Srinivas [us])
Abstract: Methods of manufacturing electronic devices, such as transistors (negative metal-oxide-semiconductor (NMOS) transistors (e.g., an N-metal stack) and positive metal-oxide-semiconductor (PMOS) transistors (e.g., a P-metal stack)) are described. Embodiments of the disclosure are directed to methods of improving PMOS transistor performance by inhibiting N-metal layer growth. The present disclosure provides two types of processes to reduce or inhibit N-metal layer growth. The disclosure provides meth[...]
Our summary: Methods of improving PMOS transistor performance by inhibiting N-metal layer growth through forming a self-assembled monolayer (SAM) or a silicon-containing layer on the metal surface of the transistor.
PMOS transistor, performance, manufacturing, N-metal layer
Patent
Marking agent and methods of making and using
Patent published on the 2025-03-06 in WO under Ref WO2025049655 by THE COCA COLA COMPANY [US] (Zeng Wen [us], Zeng William [us], Mori Yukari [us])
Abstract: The present disclosure relates to marking agents and plastic bottles having marking agents. An example marking agent can include: 40 to 70 parts of carrier vegetable oil, 1 to 10 parts of endothermic auxiliary agent 1, 10 to 30 parts of endothermic auxiliary agent 2, and 5 to 20 parts of another auxiliary agent. The carrier vegetable oil is epoxidized soybean oil, refined rapeseed oil, pressed peanut oil or a mixture thereof; the endothermic auxiliary agent 1 is titanium nitride, fine carbon bla[...]
Our summary: Methods of making and using marking agents for plastic bottles, including carrier vegetable oil and various auxiliary agents, to improve marking efficiency and printing clarity while reducing energy consumption.
marking agent, plastic bottles, auxiliary agent, vegetable oil
Patent
